Abstract: An epoxy resin composition comprising (A) a specific epoxy resin, (B) a phenolic resin having at least one naphthalene ring in a molecule, and (C) an inorganic filler has improved flow and cures into products having a low coefficient of expansion, high Tg, and low moisture absorption. The composition is suitable for encapsulating semiconductor devices.

Abstract: An epoxy resin composition comprising (A) an epoxy resin having at least two epoxy groups in a molecule, (B) a phenolic resin having at least one naphthalene ring in a molecule, and (C) an inorganic filler has improved flow and cures into products having a low coefficient of expansion, high Tg, and low moisture absorption. The composition is thus suitable for encapsulating semiconductor devices.

Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Abstract: A resin-encapsulated semiconductor device is of the structure wherein a silicon chip on a die pad is encapsulated with a molding resin. The rear surface of the die pad remote from the silicon chip, preferably the entire surfaces of the elements are treated with a primer, typically a silane coupling agent and a low stress epoxy resin encapsulant is used, preventing the encapsulating resin from separating and cracking upon subsequent dipping in solder bath.

Abstract: A method for forming a resist pattern comprises the steps of coating a resist on a substrate, baking the resist, selectively radiating electromagnetic waves or particle rays onto a surface of the resists, and developing the resist. The method further comprises, after the baking step and before the developing step, the step of cooling the resist in such a manner that a temperature control plate is disposed parallel to and adjacent to the substrate.

Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Abstract: A resist is coated on a photomask and a predetermined pattern is exposed on the resist. The photomask is dipped in a developing solution together with an electrode which exhibits a stable potential in the developing solution, so that a change in current flowing between the photomask and the electrode is detected on the basis of a change in capacitance between the photomask and the developing solution, while developing the pattern formed on the resist. The current abruptly changes (e.g., exhibits its peak) around the time at which the resist is removed and a chromium underlying layer of the photomask is exposed. The time obtained by multiplying the time until the change appears by a predetermined coefficient is regarded as the time corresponding to the end of the developing step.

Abstract: This invention is described an automatic developing device. The automatic developing device according to this invention is comprising: a stage on which the substrate to be treated is disposed after application of the resist and the patterning step is complete; a sealed frame capable of movement, that is used to sealingly cover the substrate disposed on this stage; a supply pipe for supplying developer into this sealed frame; a treatment vessel in which installs the stage, the sealing frame and the developer supply pipe; and at least one nozzle which sprays rinsing liquid provider in this treatment vessel.

Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Abstract: A pharmaceutically active phthalzone derivative of the following formula ##SPC1##Wherein each of R.sub.1 and R.sub.2 is a member selected from the group consiting of alkyl of from 1 to 3 carbon atoms; R.sub.3 is a member selected from the group consiting of alkyl of from 1 to 5 carbon atoms with the proviso that R.sub.3 can form together with R.sub.2 a member selected from the group consiting of methylene, methyl-substituted and ethyl-substituted methylene. This compound is effectie for treating hypertension, thrombosis and athroscllerosis. A process for its preparation and a pharmaceutical composition containing it are also provided.