Abstract: A semiconductor device includes a gallium nitride substrate and a pattern film disposed on a front surface of the gallium nitride substrate. In the gallium nitride substrate, a Young's modulus in a first direction along the front surface is larger than a Young's modulus in a second direction along the front surface and orthogonal to the first direction. A first ratio R1 obtained by dividing a dimension of the gallium nitride substrate in the first direction by a dimension of the gallium nitride substrate in the second direction and a second ratio R2 obtained by dividing a dimension of the pattern film in the first direction by a dimension of the pattern film in the second direction satisfy a relationship of R1<R2.

Abstract: A method of manufacturing a semiconductor device includes irradiation of laser on a semiconductor substrate and cutting of the semiconductor substrate. The laser is irradiated on the semiconductor substrate while moving a focal point of the laser inside the semiconductor substrate. The semiconductor includes a specific crystal plane that is easier to be cleaved, and that is tilted to the surface of the semiconductor substrate. The irradiation of the laser includes repetition of a specific modified layer formation process in which one of the specific modified layers along the specific crystal plane is formed by moving the focal point along the specific crystal plane. In the irradiation of the laser, the specific modified layers are arranged in a direction parallel to the surface of the semiconductor substrate. In the cutting of the semiconductor substrate, the semiconductor substrate is cut along the specific modified layers.

Abstract: A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.

Abstract: A semiconductor device including: a semiconductor substrate a semiconductor element is formed; a first electrode layer stacked on the semiconductor substrate and connected to the semiconductor element; a first insulation film stacked on an upper face of the first electrode layer; and a second electrode layer stacked over the first electrode layer and the first insulation film, the second electrode layer including a material having a mechanical strength that is higher than a mechanical strength of a material included in the first electrode layer; wherein a groove portion is provided from the upper face in a direction toward a lower face of the first electrode layer, a protrusion portion protruding into the groove portion is provided on a lower face of the second electrode layer, and a lower end of the protrusion portion is positioned below the center position in a thickness direction of the first electrode layer.

Abstract: A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 ?m.

Abstract: A semiconductor device including: a semiconductor substrate a semiconductor element is formed; a first electrode layer stacked on the semiconductor substrate and connected to the semiconductor element; a first insulation film stacked on an upper face of the first electrode layer; and a second electrode layer stacked over the first electrode layer and the first insulation film, the second electrode layer including a material having a mechanical strength that is higher than a mechanical strength of a material included in the first electrode layer; wherein a groove portion is provided from the upper face in a direction toward a lower face of the first electrode layer, a protrusion portion protruding into the groove portion is provided on a lower face of the second electrode layer, and a lower end of the protrusion portion is positioned below the center position in a thickness direction of the first electrode layer.

Abstract: A manufacturing method of a semiconductor device includes placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion. The manufacturing method further includes: growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and removing the mask from the substrate after the conductive film is grown.

Abstract: An inspection apparatus for inspecting output signal of a semiconductor device is provided with a monitor device configured to sense a signal on the monitor line and a plurality of inspection circuits connected to the monitor line. Each inspection circuit is provided with a semiconductor device support allowing a semiconductor device to be set thereon and including a signal terminal to which a signal is input from the set semiconductor device, a first resistor connected between the signal terminal and the monitor line, a selector terminal, and a first diode connected between the signal terminal and the selector terminal so that a cathode of the first diode is connected to a selector terminal side.

Abstract: A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 ?m.

Abstract: An inspection apparatus for inspecting output signal of a semiconductor device is provided with a monitor device configured to sense a signal on the monitor line and a plurality of inspection circuits connected to the monitor line. Each inspection circuit is provided with a semiconductor device support allowing a semiconductor device to be set thereon and including a signal terminal to which a signal is input from the set semiconductor device, a first resistor connected between the signal terminal and the monitor line, a selector terminal, and a first diode connected between the signal terminal and the selector terminal so that a cathode of the first diode is connected to a selector terminal side.

Abstract: A semiconductor device includes a substrate, a substrate-side electrode layer, an intermediate electrode layer, and a front-side electrode layer. The substrate includes a semiconductor layer and a projection portion, the projection portion being formed on a surface of the semiconductor layer. The substrate-side electrode layer is provided on the projection portion. The intermediate electrode layer extends from on a part of the substrate-side electrode layer, which part of the substrate-side electrode layer is located on the projection portion, to just above a region of the substrate in which region the projection portion is not provided. The front-side electrode layer is provided on a surface of the intermediate electrode layer. A Young's modulus E1 of the substrate-side electrode layer, a Young's modulus E2 of the intermediate electrode layer, and a Young's modulus E3 of the front-side electrode layer satisfy a relationship of E3>E1>E2.

Abstract: A manufacturing method of a semiconductor device includes placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion. The manufacturing method further includes: growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and removing the mask from the substrate after the conductive film is grown.

Abstract: An oscillating device includes an oscillator, an elastic supporting member for movably supporting the oscillator, a first supporting frame for supporting the elastic supporting member, and a second supporting frame extending along the elastic supporting member with a spacing maintained therebetween, the second supporting member extending from the first supporting frame, wherein the second supporting frame is provided in a cantilever shape relative to the first supporting frame.

Abstract: There is provided an image forming apparatus and method capable of reducing a measurement error in a measurement result of the surface potential of an electrostatic latent image formed on the surface of an image bearing member. The measurement error occurs under the influence of an electric field generated from a pre-exposed area. Consequently, miniaturization of an image forming apparatus and consistent print quality can be achieved. The image forming apparatus includes an image forming control section for determining an error correction value corresponding to the charge state of a latent image on the basis of relationships between charge states of the latent image and error correction values which have been prepared in advance, computing an error corrected potential measurement value using the error correction value and a potential measurement value, and controlling the image forming apparatus on the basis of the error corrected potential measurement value.

Abstract: There is provided an image forming apparatus and method capable of reducing a measurement error in a measurement result of the surface potential of an electrostatic latent image formed on the surface of an image bearing member. The measurement error occurs under the influence of an electric field generated from a pre-exposed area. Consequently, miniaturization of an image forming apparatus and consistent print quality can be achieved. The image forming apparatus includes an image forming control section for determining an error correction value corresponding to the charge state of a latent image on the basis of relationships between charge states of the latent image and error correction values which have been prepared in advance, computing an error corrected potential measurement value using the error correction value and a potential measurement value, and controlling the image forming apparatus on the basis of the error corrected potential measurement value.

Abstract: A beam having a base material of silicon monocrystal and at least one projection which is integrally formed so as to be supported at least at one end thereof and which has two surfaces having an orientation plane (111), includes a bottom surface in a plane which is common with a plane of the base material; a groove penetrating from the bottom surface to a top of the projection; and a protecting member having a resistance property against a crystal anisotropic etching liquid and covering an inner wall of the groove.

Abstract: A potential measurement apparatus for measuring a surface potential of an object of measurement detects a change in electric charge induced at a detection electrode due to electrostatic induction by changing a distance between the detection electrode and the object of measurement in accordance with a predetermined period, using a neutral distance as reference, as a signal representing a change in electric current.

Abstract: An oscillator device includes an oscillator, a resilient support member configured to support the oscillator for oscillatory motion about an oscillation central axis, a magnetic member provided on the oscillator, and a magnetic-field generating member disposed opposed to the oscillator, wherein the oscillator has a through-hole extending through the oscillator from its top surface to its bottom surface, and wherein the magnetic member is provided in the through-hole.

Abstract: A beam having a base material of silicon monocrystal and at least one projection which is integrally formed so as to be supported at least at one end thereof and which has two surfaces having an orientation plane (111), includes a bottom surface in a plane which is common with a plane of the base material; a groove penetrating from the bottom surface to a top of the projection; and a protecting member having a resistance property against a crystal anisotropic etching liquid and covering an inner wall of the groove.

Abstract: An oscillating structure includes a supporting member, a first oscillating member, second oscillating member, a first resilient supporting member configured to connect the supporting member and the first oscillating member and to support the first oscillating member for oscillatory motion around the supporting member as a central axis, and a second resilient supporting member configured to connect the first oscillating member and the second oscillating member and to support the second oscillating member movably relative to the first oscillating member, wherein the direction in which the first resilient supporting member extends from the supporting member to the first oscillating member and the direction in which the second resilient supporting member extends from the first oscillating member to the second oscillating member are opposite to each other.