Abstract: A light emitting and receiving module with heater is provided, which includes a base material. A light emitting and receiving element is disposed on the base material and performs at least one of light reception and light emission. A heater film includes an electrode formed on a base sheet. The heater film is formed so as to cover the light emitting and receiving element. A capacitance detection unit electrically connected to the electrode detects a floating capacitance between the light emitting and receiving element and the heater film. A power source electrically connected to the electrode heats the heater film. A control board switches the connection with the electrode between the capacitance detection unit and the power source.

Abstract: An airbag includes a bag portion and a plain cloth portion. The bag portion is woven by double weave. The plain cloth portion is woven by plain weave at an edge of the bag portion. The bag portion and the plain cloth portion include warp threads and filling threads. The bag portion and the plain cloth portion are woven by a one piece woven method to satisfy: (1) each warp thread is not over four consecutive filling threads and each filling thread is not over four consecutive warp threads around a border between the bag portion and the plain cloth portion; and (2) every two adjacent warp threads are not over two adjacent filling threads and every two adjacent filling threads are not over two adjacent warp threads around the border.

Abstract: A gas turbine includes a compressor, a combustor, a turbine, a generator, and a control apparatus, the compressor being provided with an air extraction valves, a plurality of inlet guide vanes, and a plurality of casing air extraction valves at its last stage, in which the control is carried out on at least one of the opening of the air extraction valve, the opening of the inlet guide vanes, and the number of openings of the casing air extraction valves which are defined as control parameters taking blade vibration stress values as indexes based on a compressor metal temperature included in behavior parameters of the gas turbine.

Abstract: A cutting tool includes: a cutting part including a cutting edge having a linear shape; and a fitted part including a fixed section to which the cutting part is fixed, and a fitted part body to be fitted to a cutting device. The cutting edge is located perpendicularly to a virtual line passing through a central axis of the fitted part body, on a plane that is perpendicular to the central axis of the fitted part body. A center of the cutting edge in its longitudinal direction is located on the virtual line.

Abstract: A semiconductor device according to an embodiment of the present technology, and the semiconductor device includes: a first substrate provided with a memory array; and a second substrate that is stacked with the first substrate, and is provided with a peripheral circuit that controls operation of the memory array.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A volatile logic circuit has a storage node, and stores inputted information. A plurality of non-volatile elements are connected to the storage node of the volatile logic circuit through the same connection gate, and control lines for control for these non-volatile elements are connected to the respective non-volatile elements, every non-volatile element. A plurality of non-volatile elements are connected to the volatile logic circuit through the same connection gate in such a way, thereby enabling the yield to be enhanced.

Abstract: A semiconductor device having a structure suitable for higher integration is provided. The semiconductor device includes: a transistor including a gate section, a first diffusion layer, and a second diffusion layer; a first electrically-conductive section; a second electrically-conductive section that is electrically insulated from the first electrically-conductive section; a first storage element that is located between the first diffusion layer and the first electrically-conductive section and is electrically coupled to each of the first diffusion layer and the first electrically-conductive section; and a second storage element that is located between the second diffusion layer and the second electrically-conductive section and is electrically coupled to each of the second diffusion layer and the second electrically-conductive section.

Abstract: There is provided a linear friction welding method of joining a first member with a second member. The linear friction welding method includes bringing a first plane, a second plane and a first corner portion in an R shape or in a chamfered shape of a first joint surface of the first member into contact with a third plane, a forth plane and a second corner portion in a shape that matches the shape of the first corner portion of a second joint surface of the second member; vibrating either the first member or the second member along an extending direction of the first corner portion and the second corner portion; and joining the first member with the second member by using frictional heat that is generated by friction between the first joint surface and the second joint surface.

Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate.

Abstract: A gas turbine includes a compressor, a combustor, a turbine, a generator, and a control apparatus, the compressor being provided with an air extraction valves, a plurality of inlet guide vanes, and a plurality of casing air extraction valves at its last stage, in which the control is carried out on at least one of the opening of the air extraction valve, the opening of the inlet guide vanes, and the number of openings of the casing air extraction valves which are defined as control parameters taking blade vibration stress values as indexes based on a compressor metal temperature included in behavior parameters of the gas turbine.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: Provided is a vehicle seat (1) capable of facilitating the mounting of a cover (30). The cover (30) of a seat cushion (2) is configured such that a upper portion cover (31) is disposed on the upper surface side of the seat cushion (2), a front portion cover (33) extends from the front edge of the upper portion cover (31) to the rear surface side of the seat cushion (2), and a rear portion cover (34) extends from the rear edge of the upper portion cover (31) to the rear surface side of the seat cushion (2). A first link portion (44) which detachably couples the rear edge of the front portion cover (33) and the front edge of the rear portion cover (34) to each other contacts a lower portion pad (22) of a cushion pad (20).

Abstract: A method for cutting an inner circumferential surface of a rotating hollow cylindrical workpiece includes: holding the workpiece with a chucking device such that a side surface of the workpiece on a first side in an axial direction of the workpiece is in contact with a contact surface of the chucking device; setting an intersection angle between a rotational center line of the workpiece and an imaginary straight line to an angle smaller than 45 degrees, the straight line being parallel to an axis line of a button tip and intersecting with the rotational center line; and setting a feed direction of the button tip to the inner circumferential surface to a direction from a second side in the axial direction of the workpiece toward the first side in the axial direction thereof, and cutting the inner circumferential surface by use of the button tip rotating about the axis line.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: The present disclosure relates to a memory cell structure, a method of manufacturing a memory, and a memory apparatus that are capable of providing a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat. A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.

Abstract: A vehicle seat provided with a seat cushion and a seat back, wherein the seat back is provided with: a urethane pad in which the surface is covered by a trim cover; and a pressure means in which a laterally extending shaft and a pair of pressing parts in the vertical direction relative to the shaft are formed on the reverse side of the urethane pad toward the side covered by the trim cover, and a configuration is adopted such that the shaft extending in the lateral direction of the pressure means rotates or swings, thereby causing the upper-side pressing part among the upper and lower pair of pressing parts to press the upper side of the urethane pad forward and the lower-side pressing part to press the lower side of the urethane pad forward.

Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a first substrate provided with an active element; and a second substrate laminated with the first substrate and electrically coupled to the first substrate, in which the second substrate is provided with a first transistor configuring a logic circuit on a first surface and with a non-volatile memory element on a second surface opposite to the first surface.

Abstract: A semiconductor device according to an embodiment of the present technology, and the semiconductor device includes: a first substrate provided with a memory array; and a second substrate that is stacked with the first substrate, and is provided with a peripheral circuit that controls operation of the memory array.