Abstract: There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: Upon receipt of an intercepted first Ethernet Frame, a communication system converts the first Ethernet Frame into a second Ethernet Frame including a second identifier based on the first identifier and the conversion information, and sends the second Ethernet Frame toward a first input/output port identified by the second identifier. The system, in sending an Ethernet Frame on which communication service has been executed from the virtual machine, converts the Ethernet Frame on which the communication service has been executed into a third Ethernet Frame including a third identifier identifying a second input/output port of the virtual machine which has executed the communication service. The system converts the third Ethernet Frame into the first Ethernet Frame including the first identifier based on the third identifier and the conversion information and sends the first Ethernet Frame toward the destination of the first Ethernet Frame.

Abstract: At a contact step in a tool radius adjusting method, a reference portion of a movable body provided radially movably on a housing of a boring tool and a position adjusting reference member fixed on a machine tool are brought into contact by sliding the movable body relative to the housing so that the position of a cutting blade comes to a predetermined position in a direction to go away from a rotational axis. Then, at an adjusting step, the position of the cutting blade relative to the rotational axis is adjusted by changing the relative position between a tool spindle holding the boring tool and the position adjusting reference member in a direction to come close to each other by drive mechanisms of the machine tool used for positioning a spindle head with the tool spindle relative to a workpiece in machining the workpiece with the cutting blade.

Abstract: A tool radius adjusting device executes an operation for adjusting the tool radius of a boring holder in parallel with execution of a machining program for executing an operation of a spindle head and an operation of a tool changer. A carrier control unit determines whether the tool changer is executing a tool changing process. When the tool changing process is not being executed, the carrier control unit allows the carrier device to execute an operation for picking the boring holder out from the tool magazine and an operation for returning the boring holder, of which the tool radius has been adjusted, to the tool magazine.

Abstract: A semiconductor device includes: a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor substrate including a first surface and a second surface facing each other, the semiconductor substrate having an element region in which a transistor is provided on the first surface, and a separation region in which an element separating layer surrounding the element region is provided; a contact plug extending from the first surface to the second surface, in the element region of the semiconductor substrate; and an insulating film covering a periphery of the contact plug.

Abstract: A live migration process between different locations is realized without migrating data stored in a storage area to another location. A network device, which is included in each of locations, for coupling to another one of the locations, the network device stores a program for realizing an access processing module for managing accesses, and coupling management information for managing a coupling relationship between the plurality of virtual machines and the plurality of storage areas, and wherein the access processing module is configured to: receive a notification to start a live migration process, refer to the coupling management information to identify a port for accessing a storage area allocated to a virtual machine; acquire an address of a transfer destination device to which an access request is transferred; generate conversion information; and control the access request based on the conversion information.

Abstract: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are formed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layer 5 on a surface thereof.

Abstract: A semiconductor device includes: a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.

Abstract: A boring holder in a tool radius adjusting system is provided with a cutting blade and fine and coarse motion adjusting mechanisms each capable of adjusting the position of the cutting blade relative to a rotational axis of the boring holder. The tool radius adjusting system is provided with a tool radius measuring device for measuring the tool radius of the boring holder and a controller configured to calculate a compensation amount based on a tool radius measured by the tool radius measuring device and a target tool radius and to operate the fine and coarse motion adjusting mechanisms based on the compensation amount so that the tool radius is brought into agreement with the target tool radius.

Abstract: The gas turbine blade includes a cooling channel formed therein, and a partition disposed on its tip side for isolating the cooling channel from the outside. The partition is integrally formed with a blade portion in a position on its inner side in the radial direction with respect to the tip of the gas turbine blade. Reinforcements are provided on the outer side of the partition in the radial direction and on the inner side of the tip end wall extended from the blade portion to connect the partition with the tip end wall. Outer surface cooling holes are formed to extend from the cooling channel into communication with an outer surface of the tip end wall, and inner surface cooling holes are formed to extend from the cooling channel into an inner surface of the tip end wall through the partition.

Abstract: There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step of for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are formed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layer 5 on a surface thereof.

Abstract: A method including a phosphorous ion introduction step for implanting phosphorous ions from a side of a surface Si layer into an SOI substrate in which the surface Si layer and an embedded oxide layer having a predetermined thickness are formed on an Si base material layer to convert the embedded oxide layer into a PSG layer to lower a softening point. An SiC forming step is performed by heating the SOI substrate having the PSG layer formed therein in an atmosphere of hydrocarbon-based gas to convert the surface Si layer into SiC. Thereafter, the resulting substrate is cooled to form a single crystal SiC layer on a surface thereof.

Abstract: A linear solenoid comprising: linear solenoid portion, comprising: a coil; a cylindrical movable core which is attracted toward a fixed core when the coil is energized; and a cylindrical yoke which surrounds an outer circumference surface of the movable core, wherein the movable core has a shaft-less structure, a first plain bearing and a second plain bearing for slidably supporting both ends of the movable core are provided respectively at both ends of a cylindrical yoke along its axis, and the first plain bearing and the second plain bearing are provided to be projected from the inner circumference surface of the cylindrical yoke by a predetermined length T toward the movable core.

Abstract: In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.

Abstract: A live migration process between different locations is realized without migrating data stored in a storage area to another location. A network device, which is included in each of locations, for coupling to another one of the locations, the network device stores a program for realizing an access processing module for managing accesses, and coupling management information for managing a coupling relationship between the plurality of virtual machines and the plurality of storage areas, and wherein the access processing module is configured to: receive a notification to start a live migration process, refer to the coupling management information to identify a port for accessing a storage area allocated to a virtual machine; acquire an address of a transfer destination device to which an access request is transferred; generate conversion information; and control the access request based on the conversion information.

Abstract: At a contact step in a tool radius adjusting method, a reference portion of a movable body provided radially movably on a housing of a boring tool and a position adjusting reference member fixed on a machine tool are brought into contact by sliding the movable body relative to the housing so that the position of a cutting blade comes to a predetermined position in a direction to go away from a rotational axis. Then, at an adjusting step, the position of the cutting blade relative to the rotational axis is adjusted by changing the relative position between a tool spindle holding the boring tool and the position adjusting reference member in a direction to come close to each other by drive mechanisms of the machine tool used for positioning a spindle head with the tool spindle relative to a workpiece in machining the workpiece with the cutting blade.

Abstract: A semiconductor device includes: a first substrate on which a first field effect transistor is provided; and a second substrate on which a second field effect transistor of a second conductive type is provided; the first and second substrates being bonded to each other at the substrate faces thereof on which the first and second field transistors are provided, respectively; the first field effect transistor and the second field effect transistor being electrically connected to each other.

Abstract: A V-type internal combustion engine includes a crankcase, a crankshaft disposed in the crankcase, and first and second banks operatively attached to the crankcase. The engine also includes a throttle body, an electric motor and a force-transmitting device arranged between the first and second banks. The force-transmitting device is disposed adjacent the front bank with respect to the throttle body. The force-transmitting device is disposed on a non-transmitting portion side opposite to a side where a timing mechanism is located with respect to a branch pipe of an intake air routing pipe, which supplies intake air into a cylinder adjacent to the timing mechanism of the first bank. An electric motor for operating the throttle valve is provided in the throttle body, and fuel injection valves are arranged between the banks.