Abstract: The magnetoresistive effect element is provided with a plurality of magnetoresistive effect laminated bodies, a plurality of lower lead electrodes and upper lead electrodes that electrically connect the plurality of magnetoresistive effect laminated bodies in series, and a film that electrically connects the plurality of lower lead electrodes to each other so that none of the plurality of lower lead electrodes is electrically isolated.

Abstract: The magnetoresistive effect element is provided with a plurality of magnetoresistive effect laminated bodies, a plurality of lower lead electrodes and upper lead electrodes that electrically connect the plurality of magnetoresistive effect laminated bodies in series, and a film that electrically connects the plurality of lower lead electrodes to each other so that none of the plurality of lower lead electrodes is electrically isolated.

Abstract: A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2?G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

Abstract: A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.

Abstract: A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.

Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

Abstract: A thin film magnetic head including a magnetoresistive element (MR) having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element, a pair of magnetic domain controlling layers are formed by stacking a buffer layer, a magnetic bias layer and a first cap layer in this order on both sides, in a track-width direction, of the MR element via an insulating layer, respectively. Then, a second cap layer is formed to cover the upper surface of the MR element and connect the pair of cap-layers. Then, a gap adjustment layer and a top shielding layer are formed to cover the pair of first cap layers and the second cap layer, completing a read head section.

Abstract: The present invention relates to a method of making a mask for patterning a thin film. The method includes a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate; a step of forming the inorganic material in a predetermined pattern; and a step of narrowing the inorganic material with the alkali solution to form the mask.

Abstract: A magneto-resistive effect (MR) element includes a magneto-resistive (MR) stack with a magnetization free layer, a bias magnetic field application layer positioned on a side of the MR stack, and an insulation film insulating the bias magnetic field application layer. The bias magnetic field application layer includes hard magnetic layer positioned on the side of the magnetization free layer and formed of iron-platinum (FePt) alloy and Pt seed layer provided between the MR stack and the hard magnetic layer and on a lower surface of the hard magnetic layer in contact manner with the hard magnetic layer and formed of platinum (Pt). The insulation film is a MgO insulation film formed of oxide magnesium (MgO), provided on a surface of the Pt seed layer in contact manner with the Pt seed layer, the surface being opposite to another surface of the Pt seed layer contacting the hard magnetic layer.

Abstract: A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.

Abstract: A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.

Abstract: A thin film magnetic head includes a magnetoresistive element having a recording-medium-facing-surface which is to be faced with a magnetic recording medium; a magnetic bias layer located on a side opposite to the recording-medium-facing-surface of the magnetoresistive element, and applying a bias magnetic field to the magnetoresistive element in a direction orthogonal to the recording-medium-facing-surface; and a resistive film pattern having the recording-medium-facing-surface, the resistive film pattern being located side by side with the magnetoresistive element in a track-width direction.

Abstract: The present invention relates to a method of making a mask for patterning a thin film The method includes a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate; a step of forming the inorganic material in a predetermined pattern; and a step of narrowing the inorganic material with the alkali solution to form the mask.

Abstract: This thin film magnetic head has a magnetic read head and a magnetic write head each having respective end surfaces exposed to an ABS. The magnetic read head includes a magnetic reader including an end surface exposed to the ABS, first heat generator disposed on an opposite side of the magnetic reader from the ABS, and first temperature detector disposed closer to the ABS than the first heat generator is. The magnetic write head includes a magnetic pole having an end surface exposed to the ABS, second heat generator, and second temperature detector disposed closer to the ABS than the second heat generator is. The first heat generator and the first temperature detector adjust the protrusion of the magnetic read head, and the second heat generator and the second temperature detector adjust the protrusion of the magnetic write head.

Abstract: The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

Abstract: A magnetic head disposed in a slider arranged with an interval with respect to a magnetic disk includes a sensor that is positioned in a stepped-back position from an air bearing surface facing the magnetic disk, an insulating film that is positioned on the air bearing surface and that covers the sensor; a pair of lead films, the lead films being electrically connected to the sensor such that at least portions of the lead films are exposed on the air bearing surface, and being configured to transfer a temperature change of the air bearing surface to the sensor.

Abstract: A magnetic head disposed in a slider, that is arranged at an interval from a magnetic disk includes a sensor disposed in a position that is opposed to the magnetic disk, a heat conductive film that is positioned on an air bearing surface opposed to the magnetic disk, and that is formed so as to overlap the sensor, of which a height in a direction perpendicular to the air bearing surface is more than a height of the sensor, and that transfers a temperature change of the air bearing surface to the sensor, and a pair of lead films electrically connected to the sensor and not electrically connected to the heat conductive film.

Abstract: A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.

Abstract: A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.

Abstract: A thin-film magnetic head has a magnetoresistive effect read head element. The magnetoresistive effect read head element includes a lower shield layer, an upper shield layer, and a magnetoresistive effect layer formed between the lower shield layer and the upper shield layer. The magnetoresistive effect read head element also includes a lower antiferromagnetic layer. The lower antiferromagnetic layer is contacted with the lower shield layer only at an edge area of the lower shield layer.