Abstract: This thin film magnetic head has a magnetic read head and a magnetic write head each having respective end surfaces exposed to an ABS. The magnetic read head includes a magnetic reader including an end surface exposed to the ABS, first heat generator disposed on an opposite side of the magnetic reader from the ABS, and first temperature detector disposed closer to the ABS than the first heat generator is. The magnetic write head includes a magnetic pole having an end surface exposed to the ABS, second heat generator, and second temperature detector disposed closer to the ABS than the second heat generator is. The first heat generator and the first temperature detector adjust the protrusion of the magnetic read head, and the second heat generator and the second temperature detector adjust the protrusion of the magnetic write head.

Abstract: A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.

Abstract: A magneto-resistance effect element comprises a stacked body which comprises a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction that varies according to an external magnetic field, and a nonmagnetic spacer layer which is interposed between the pinned layer and the free layer. The stacked body having a constricted shape in which at least one part of the spacer layer is constricted when viewed from at least one direction perpendicular to a stacked direction of the stacked body.

Abstract: A magnetic head disposed in a slider, that is arranged at an interval from a magnetic disk includes a sensor disposed in a position that is opposed to the magnetic disk, a heat conductive film that is positioned on an air bearing surface opposed to the magnetic disk, and that is formed so as to overlap the sensor, of which a height in a direction perpendicular to the air bearing surface is more than a height of the sensor, and that transfers a temperature change of the air bearing surface to the sensor, and a pair of lead films electrically connected to the sensor and not electrically connected to the heat conductive film.

Abstract: A thin film magnetic head has a magneto-resistive (MR) effect element including an MR effect film formed by sequentially layering a magnetic pinned layer, a nonmagnetic layer and a free layer, and a pair of bias magnetic field application layers formed at junction tapered parts formed on both end parts of the magneto-resistive effect film in the width direction via insulating layers. Further, magnetic pinned layer oxidized films whose thickness is Hx (unit: nm) are disposed on end parts of the magnetic pinned layer at the junction tapered parts, free layer oxidized films whose thickness is Hf (unit: nm) are disposed on end parts of the free layer at the junction tapered parts, and the oxidized films are configured such that the thickness ratio (Hx/Hf) is not more than 0.5.

Abstract: A magnetic head disposed in a slider arranged with an interval with respect to a magnetic disk includes a sensor that is positioned in a stepped-back position from an air bearing surface facing the magnetic disk, an insulating film that is positioned on the air bearing surface and that covers the sensor; a pair of lead films, the lead films being electrically connected to the sensor such that at least portions of the lead films are exposed on the air bearing surface, and being configured to transfer a temperature change of the air bearing surface to the sensor.

Abstract: Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.

Abstract: A thin-film magnetic head provided with at least one MR read head element includes a lower shield layer, an upper shield layer, and an MR layer formed between the lower shield layer and the upper shield layer. A profile of the upper shield layer, appeared at an ABS, has obtuse or rounded upper corners at end edges of the upper shield layer along a track-width direction.

Abstract: A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.

Abstract: A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an upper magnetic shield layer formed on the MR multi-layered structure, and an additional lower magnetic shield layer directly laminated on the lower magnetic shield layer outside both side ends in a track-width direction of the MR multi-layered structure. The additional lower magnetic shield layer is directly contacted with both side surfaces in a track-width direction of the MR multi-layered structure. A top surface of the additional lower magnetic shield layer is positioned higher in height than a top surface of the lower magnetic shield layer in a region where the MR multi-layered structure is formed.

Abstract: An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.

Abstract: Provided is a magnetoresistive effect element in which a magneto-sensitive portion is formed in a position where the portion sufficiently receives bias field and the influence of reattachments on reading output is avoided. The magneto-sensitive portion has a pinned layer, a non-magnetic intermediate layer and a free layer. A multilayer, that includes a foundation layer, the magneto-sensitive portion and a cap layer, has upper side surfaces forming an inclination angle ?C, intermediate side surfaces forming an inclination angle ?S, and lower side surfaces forming an inclination angle ?U. The inclination angle ?S is greater than both of the inclination angles ?C and ?U. The boundary between the upper side surface and the intermediate side surface is located above a side surface of the magneto-sensitive portion, and the boundary between the intermediate side surface and the lower side surface is located below a side surface of the magneto-sensitive portion.

Abstract: The thin-film magnetic head of the invention comprises a magneto-resistive effect device including a multilayer film and a bias mechanism portion including a bias magnetic field-applying layer formed on each widthwise end of the multilayer film. When the magneto-resistive effective device including a multilayer film and the bias mechanism portion are viewed in plane on their own, the uppermost extremity of the rear end of the magneto-resistive effect device and the uppermost extremity of the rear end of the bias mechanism portion lie at substantially the same depth-wise position, and the rear slant of the bias mechanism portion is gentler in gradient than the rear slat of the magneto-resistive effect device. It is thus possible just only to facilitate the fabrication of the device but also to achieve several advantages of being a lower rate of occurrence of noise, higher reliability and higher yields.

Abstract: An MR effect element that can obtain the sufficient back flux-guide effect under the condition of reducing the capacitance between the upper and lower electrode layers is provided. The element comprises: an MR effect multilayer provided on the lower electrode layer; an insulating layer surrounding a rear side surface and side surfaces opposed to each other in track width direction of the MR effect multilayer; and an upper electrode layer provided on the MR effect multilayer and the insulating layer, the insulating layer having a concave portion filled with a portion of the upper electrode layer, the concave portion positioned near the rear side surface of the MR effect multilayer, and a bottom point of a concave of the concave portion positioned at the same level or a lower level in stacking direction compared to an upper surface of the free layer.

Abstract: The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

Abstract: A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, and an upper magnetic shield layer formed on the MR multi-layered structure. The lower magnetic shield layer consists of a first soft magnetic layer and a second soft magnetic layer laminated on and magnetically connected with the first soft magnetic layer. A part of an upper surface of the first soft magnetic layer outside both side ends in a track-width direction of the MR multi-layered structure is located lower in height than an upper surface within a region where the MR multi-layered structure is formed, of the lower magnetic shield layer. The second soft magnetic layer is formed outside both side ends in a track-width direction of the MR multi-layered structure.

Abstract: Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.

Abstract: A thin film magnetic head has a magneto-resistive (MR) effect element including an MR effect film formed by sequentially layering a magnetic pinned layer, a nonmagnetic layer and a free layer, and a pair of bias magnetic field application layers formed at junction tapered parts formed on both end parts of the magneto-resistive effect film in the width direction via insulating layers. Further, magnetic pinned layer oxidized films whose thickness is Hx (unit: nm) are disposed on end parts of the magnetic pinned layer at the junction tapered parts, free layer oxidized films whose thickness is Hf (unit: nm) are disposed on end parts of the free layer at the junction tapered parts, and the oxidized films are configured such that the thickness ratio (Hx/Hf) is not more than 0.5.

Abstract: A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.

Abstract: The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element 15, a pair of magnetic domain controlling layers 16 are formed by stacking a buffer layer 161, a magnetic bias layer 162 and a cap layer 163 in this order on both sides, in a track-width direction, of the MR element 15 via an insulating layer 14 respectively. Then, a cap layer 17 is formed so as to cover the upper surface of the MR element 15 and connect the pair of cap-layers 163. After that, a gap adjustment layer 18 and a top shielding layer 19 are formed in order so as to cover the pair of cap layers 163 and the cap layer 17, thereby a read head section 10 is completed.