Abstract: A copying apparatus includes a capturing unit that divides an image on a document into plural regions and captures an image of each region, a storage unit that stores data representing the image of the region, a forming unit that reads the data and forms an image represented by the data on a medium, and an instruction unit that determines a capture start time on the basis of a size of the data and instructs the capturing unit to start capturing the image at the capture start time.

Abstract: A client device includes a supply section that supplies guide screen information to a specified device in response to selection of a specific type of paper, the guide screen information representing a guide screen related to supply of the paper to a printer, and a transmitting section that transmits print data to the printer.

Abstract: A transfer apparatus includes first and second communication paths, an accepting unit, a registration unit, an acquisition unit, and a transfer unit. The accepting unit accepts a request for data. The registration unit detects and registers a range that has been specified for writing. The acquisition unit acquires the data from a memory controller via the first communication path in a case where the request is issued for a registered range, and acquires the data from the arbitration device via the second communication path in a case where the request is issued for an unregistered range. The transfer unit transfers the acquired data. In a case where a first range detected from the arbitration device overlaps at least a portion of or is adjacent to a second range, which has been registered, the registration unit combines the first and second ranges into a continuous range and registers the continuous range.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n?type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.

Abstract: A circuit member including: an element having a functional region; a tabular cover disposed opposite to the functional region; and a rib formed to surround the functional region, for providing a space between the functional region and the cover. The cover includes a sheet S having a thickness of 100 ?m or less. The sheet S has a tensile elastic modulus Es at 175° C. of 10 GPa or more. The tensile elastic modulus Es at 175° C. of the sheet S is preferably 20 GPa or more.

Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.

Abstract: A copying apparatus includes a capturing unit that divides an image on a document into plural regions and captures an image of each region, a storage unit that stores data representing the image of the region, a forming unit that reads the data and forms an image represented by the data on a medium, and an instruction unit that determines a capture start time on the basis of a size of the data and instructs the capturing unit to start capturing the image at the capture start time.

Abstract: A non-transitory computer-readable recording medium storing an information processing program causing a computer to execute a process including obtaining a name of a variable usable for a software program and a configuration value of the variable, obtaining a compressed string into which the name of the variable is compressed, writing, to a configuration file, the compressed string and the obtained configuration value so that the compressed string and the obtained configuration value are associated each other, and outputting a configuration value corresponding to an inquiry when the inquiry is received, the inquiry including a designation of a name of a specified variable and a request to obtain a configuration value corresponding to the specified variable, the configuration value corresponding to the specified variable being specified based on a compressed string obtained by compressing the designated name of the specified variable.

Abstract: This semiconductor element drive apparatus switches an insulating gate at a positive voltage to at a negative voltage just before recovery when an anode current is large, and holds the insulating gate at the positive voltage when the anode current is small in a semiconductor element that is provided with: a first conductivity type first semiconductor layer (n? type drift layer); a second conductivity type second semiconductor layer (p type anode layer) that is adjacent to the first semiconductor layer and is exposed on one main surface (anode side); a first conductivity type third semiconductor layer (n type cathode layer) that is adjacent to the first semiconductor layer, is exposed on the other main surface (cathode side), and has an impurity concentration higher than that of the first semiconductor layer (n? type drift layer); and the insulating gate on the other main surface (cathode side).

Abstract: A transfer apparatus includes first and second communication paths, an accepting unit, a registration unit, an acquisition unit, and a transfer unit. The accepting unit accepts a request for data. The registration unit detects and registers a range that has been specified for writing. The acquisition unit acquires the data from a memory controller via the first communication path in a case where the request is issued for a registered range, and acquires the data from the arbitration device via the second communication path in a case where the request is issued for an unregistered range. The transfer unit transfers the acquired data. In a case where a first range detected from the arbitration device overlaps at least a portion of or is adjacent to a second range, which has been registered, the registration unit combines the first and second ranges into a continuous range and registers the continuous range.

Abstract: A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n?-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n?-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n?-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n?-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Abstract: There is provided a semiconductor device including a first emitter layer of a first conductivity type, a drift layer of a second conductivity type, adjacent to the first emitter layer, a channel layer of the first conductivity type, adjacent to the drift layer, a second emitter layer of the second conductivity type, adjacent to the channel layer, a collector electrode electrically coupled to the first emitter layer, an emitter electrode electrically coupled to the second emitter layer, a first trench-gate electrode for controlling on and off of an electric current flowing between the collector electrode and the emitter electrode, and a second trench-gate electrode for controlling a turn-off power loss. The semiconductor device further includes a thyristor unit made up of the first emitter layer, the drift layer, the channel layer, and the second emitter layer.

Abstract: A semiconductor substrate capable of detecting operating current of a MOSFET and diode current in a miniaturized MOSFET such as a trench-gate type MOSFET is provided. A semiconductor substrate includes a main current region and a current sensing region in which current smaller than main current flowing in the main current region flows. The main current region has a source electrode disposed on a main surface, the source electrode being in contact with a p-type semiconductor region (body) and an n+-type semiconductor region (source), and the current sensing region has a MOSFET current detecting electrode and a diode current detecting electrode on a main surface, the MOSFET current detecting electrode being in contact with the p-type semiconductor region (body) and the n+-type semiconductor region (source), the diode current detecting electrode being in contact with the p-type semiconductor region (body).

Abstract: A semiconductor device according to the present invention includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type adjacent to the first semiconductor layer and having an impurity concentration lower than the first semiconductor layer; a third semiconductor layer of a second conductivity type adjacent to the second semiconductor layer; a fourth semiconductor layer of the first conductivity type located within the third semiconductor layer; a first electrode coupled to the third semiconductor layer and the fourth semiconductor layer; a second electrode coupled to the first semiconductor layer; and an insulated gate provided over the respective surfaces of the third semiconductor layer and the fourth semiconductor layer, wherein peak value of the impurity concentration of the third semiconductor layer is in the range of 2×1016 cm?3 or more and 5×1018 cm?3 or less.

Abstract: A semiconductor device according to the present invention includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type, which is adjacent to the first semiconductor layer and has an impurity concentration lower than the first semiconductor layer; a third semiconductor layer adjacent to the second semiconductor layer; a first electrode electrically coupled to the third semiconductor layer; a second electrode electrically coupled to the first semiconductor layer; and an insulated gate provided over the surface of the third semiconductor layer. Then, an end portion of the insulated gate is located at a position distant from the junction part between the second semiconductor layer and the third semiconductor layer within the surface of the third semiconductor layer.

Abstract: A processing apparatus generates a command in accordance with a size of the coordinate input area and a distance between two touch inputs on the coordinate input area. When a distance between two touch inputs on a first coordinate input area larger than a second coordinate input area changes to a first distance, a command corresponding to a second distance longer than the first distance is generated. When a distance between two touch inputs on the second coordinate input area smaller than the first coordinate input area changes to a third distance, a command corresponding to the third distance is generated.

Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.