Abstract: According to one embodiment, a memory device includes a first interconnect, a second interconnect, a first layer, a second layer. The first interconnect includes a first region and a second region. The first region extends in a first direction and includes a first metallic element. The second region extends in the first direction and includes the first metallic element and nitrogen. The second interconnect extends in a second direction crossing the first direction. A portion of the second region is positioned between the second interconnect and a portion of the first region. The first layer is provided between the second interconnect and the portion of the second region. The second layer is provided between the first layer and the second interconnect. The second layer includes at least one of silicon or a second oxide. The silicon is monocrystalline, polycrystalline, or amorphous.

Abstract: A storage apparatus according to embodiments includes: a first interlayer insulating film extending in a first direction; a second interlayer insulating film extending in the first direction; a first conductive layer extending in the first direction and provided between the first interlayer insulating film and the second interlayer insulating film; a second conductive layer extending in a second direction intersecting the first direction; a resistance change layer including a first portion provided between the first interlayer insulating film and the second interlayer insulating film and including a second portion provided between the second conductive layer and the first interlayer insulating film, between the second conductive layer and the first conductive layer, and between the second conductive layer and the second interlayer insulating film; and a sidewall insulating film provided between the first portion and the first interlayer insulating film and between the first portion and the second interlayer i

Abstract: A positive electrode active material contains a lithium composite oxide and a covering material. The lithium composite oxide has a crystal structure that belongs to space group Fd-3m. The ration I(111)/I(400) of a first integrated intensity I(111) of a first peak corresponding to a (111) plane to a second integrated intensity I(400) of a second peak corresponding to a (400) plane in an XRD pattern of the lithium composite oxide satisfies 0.05?I(111)/I(400)?0.90. The covering material has an electron conductivity of 106 S/m or less.

Abstract: A positive electrode active material contains a lithium composite oxide and a covering material. The lithium composite oxide contains at least one element selected from the group consisting of fluorine, chlorine, nitrogen, and sulfur. The lithium composite oxide has a crystal structure that belongs to space group C2/m. The ratio I(003)/I(104) of a first integrated intensity I(003) of a first peak corresponding to a (003) plane to a second integrated intensity I(104) of a second peak corresponding to a (104) plane in an XRD pattern of the lithium composite oxide satisfies 0.05?I(003)/I(104)?0.90. The covering material has an electron conductivity of 106 S/m or less.

Abstract: A memory device according to an embodiment includes a first conductive layer, a second conductive layer; and a first metal oxide layer provided between the first conductive layer and the second conductive layer. The first metal oxide layer includes titanium oxide, the first metal oxide layer has a first region and a second region, a mole fraction of anatase titanium oxide in the titanium oxide of the first region is a first mole fraction, and a mole fraction of anatase titanium oxide in the titanium oxide of the second region is a second mole fraction lower than the first mole fraction.

Abstract: According to one embodiment, a nonvolatile memory device includes a first conductive layer, a second conductive layer, and an intermediate layer. The first conductive layer includes a first element. The first element includes a at least one selected from the group consisting of Ag, Cu, Ni, Co, Ti, Al, and Au. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an oxide. The oxide includes a second element and a third element. The second element includes at least one second element being selected from the group consisting of Ti, Ta, Hf, W, Mg, Al, and Zr. The third element is different from the second element and includes at least one selected from the group consisting of Si, Ge, Hf, Al, Ta, W, Zr, Ti, and Mg.

Abstract: A method to prevent conflict during synchronization of medical data between a cloud repository on a cloud server and a plurality of local repositories on a plurality of local servers of healthcare facilities connected to the cloud server is provided. The plurality of local servers includes a first local server and the plurality of local repositories includes a first local repository on the first local server. The method includes, while a connection between the first local server and the cloud server is established, causing the first local server to: receive remote data from the cloud repository; store the remote data in the first local repository as local data; and in response to the connection between the first local server and the cloud server getting disconnected, causing the first local server to: access the first local repository instead of the cloud repository; and restrict editing on the first local repository.

Abstract: A method to search, extract, and display medical images and data between a plurality of medical repositories on a plurality of medical servers of healthcare facilities within a network is provided. The plurality of medical servers are connected through a data integration controller and includes a local medical server and two or more remote medical servers. The method causes the local medical server to: transmit a medical data integration request with a search key associated with a predetermined patient to the remote medical servers, receive a medical data associated with the medical data integration request; display the received medical data as an integrated view; perform post-processing on the received medical data; store a condition of the performed post-processing; and apply the same post-processing condition to medical data received from a subsequent medical data integration request associated with the same search key.

Abstract: A method to prevent conflict during synchronization of medical data between a cloud repository on a cloud server and a plurality of local repositories on a plurality of local servers of healthcare facilities connected to the cloud server is provided. The plurality of local servers includes a first local server and the plurality of local repositories includes a first local repository on the first local server. The method includes, in response to a connection between the first local server and the cloud server getting disconnected, causing the first local server to: access the first local repository instead of the cloud repository, determine whether local data is associated with a shared patient registered with more than one healthcare facility among the healthcare facilities connected to the cloud server, and prohibit alteration of the local data if the local data is associated with the shared patient.

Abstract: An X-ray imaging apparatus according to an embodiment includes an X-ray generator, an X-ray detector, an input interface, and processing circuitry. The processing circuitry is configured to: display, on a display, an image based on X-rays detected by the X-ray detector; control, based on a first control signal according to the direction signal, a rotating mechanism of the arm so that the arm performs a first rotation; and control, in response to an end of the first rotation, based on a second control signal, the rotating mechanism so that the arm performs a second rotation which returns the arm toward a position before the first rotation, the position being stored in a memory circuit.

Abstract: The invention provides a machine tool capable of facilitating a process of switching product ejecting apparatuses. The machine tool comprises a spindle which rotates a workpiece around an axis of the spindle, an actuator which reciprocates a rod arranged parallel to the axis of the spindle, and a coupler switched between a coupling position and a standby position. The coupler connects the rod and an ejecting shaft inserted in the spindle when held in the coupling position. The coupler is not connected to at least the ejecting shaft when held in the standby position. The ejecting shaft along with the coupler is moved in the direction of the axis of the spindle according to reciprocation of the rod when the coupler is held in the coupling position.

Abstract: A memory device according to an embodiment includes a first conductive layer, a second conductive layer; and a first metal oxide layer provided between the first conductive layer and the second conductive layer. The first metal oxide layer includes titanium oxide, the first metal oxide layer has a first region and a second region, a mole fraction of anatase titanium oxide in the titanium oxide of the first region is a first mole fraction, and a mole fraction of anatase titanium oxide in the titanium oxide of the second region is a second mole fraction lower than the first mole fraction.

Abstract: According to one embodiment, a memory device includes a first interconnect, a second interconnect, a first layer, a second layer. The first interconnect includes a first region and a second region. The first region extends in a first direction and includes a first metallic element. The second region extends in the first direction and includes the first metallic element and nitrogen. The second interconnect extends in a second direction crossing the first direction. A portion of the second region is positioned between the second interconnect and a portion of the first region. The first layer is provided between the second interconnect and the portion of the second region. The second layer is provided between the first layer and the second interconnect. The second layer includes at least one of silicon or a second oxide. The silicon is monocrystalline, polycrystalline, or amorphous.

Abstract: According to one embodiment, a variable resistance element includes first and conductive layers and first and second layers. The first conductive layer includes a first element including at least one selected from the group consisting of silver, copper, aluminum, nickel, and titanium. The second conductive layer includes at least one selected from the group consisting of platinum, gold, iridium, tungsten, palladium, rhodium, titanium nitride, and silicon. A first layer contacts the first conductive layer, and is provided between the first and second conductive layers. The first layer includes a first material. The first material is insulative. The second layer includes a second element and a second material and is provided between the first layer and the second conductive layer. The second element includes at least one selected from the group consisting of silver, copper, aluminum, nickel, and titanium. The second material is different from the first material.

Abstract: A memory device includes first interconnects extending in a first direction; a second interconnect extending in a second direction crossing the first interconnects; an insulating film provided between two first interconnects; and a resistance change film between the first interconnects and the second interconnect. The resistance change film includes a first layer and second layers, the first layer extending in the second direction along the second interconnect, and the second layers being provided selectively between the respective first interconnects and the first layer. The second layers protrude toward the second interconnect exceeding an end surface of the insulating film in a third direction from the respective first interconnects toward the second interconnect. The respective second layers have a surface on a side of the first interconnects, and a width in the second direction of the surface is wider than a width in the second direction of the first interconnect.

Abstract: A method to search, extract, and display medical images and data between a plurality of medical repositories on a plurality of medical servers of healthcare facilities within a network. The plurality of medical servers are connected through a data integration controller and includes a local medical server and two or more remote medical servers. The method causes the local medical server to: transmit a search request to the plurality of remote medical servers; receive and display medical information associated with the search request from the plurality of remote medical servers; transmit, a medical data retrieval request to retrieve medical data associated with medical information selected by a user; receive the medical data associated with the medical data retrieval request; and display the received medical data to the user.

Abstract: A positive electrode active material contains a lithium composite oxyfluoride and an organosilicon compound binding to the lithium composite oxyfluoride. The organosilicon compound has insulation property.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode, a first layer, and a second layer. The first electrode includes a first element. The first layer is provided between the first electrode and the second electrode. The first layer includes at least one of an insulator or a first semiconductor. The second layer is provided between the first layer and the second electrode. The second layer includes a first region and a second region. The second region is provided between the first region and the second electrode. The second region includes a second element. A standard electrode potential of the second element is lower than a standard electrode potential of the first element. A concentration of nitrogen in the first region is higher than a concentration of nitrogen in the second region.

Abstract: To provide a photoelectric conversion element being excellent in photoelectric conversion efficiency and stability of photoelectric conversion function, a method for producing the photoelectric conversion element, and a solar cell using the photoelectric conversion element. A photoelectric conversion element having a substrate, a first electrode, a photoelectric conversion layer containing a semiconductor and a sensitizing pigment, a hole transport layer having a conductive polymer, and a second electrode, wherein the hole transport layer is formed by bringing the photoelectric conversion layer into contact with a solution containing a conductive polymer precursor and an oxidizer at a ratio of 0.1<[Ox]/[M] (wherein [Ox] is the molar concentration of the oxidizer; and [M] is the molar concentration of the conductive polymer precursor), and irradiating the photoelectric conversion layer with light.

Abstract: According to one embodiment, a memory device includes a first layer, a second layer, and a third layer provided between the first layer and the second layer. The first layer includes first interconnections and a first insulating portion. The first interconnections extend in a first direction. The first insulating portion is provided between the first interconnections. The second layer includes a plurality of second interconnections and a second insulating portion. The second interconnections extend in a second direction crossing the first direction. The second insulating portion is provided between the second interconnections. The third layer includes a ferroelectric portion and a paraelectric portion. The ferroelectric portion and the paraelectric portion include hafnium oxide.