Abstract: To provide a photoelectric conversion element being excellent in photoelectric conversion efficiency and stability of photoelectric conversion function, a method for producing the photoelectric conversion element, and a solar cell using the photoelectric conversion element. A photoelectric conversion element having a substrate, a first electrode, a photoelectric conversion layer containing a semiconductor and a sensitizing pigment, a hole transport layer having a conductive polymer, and a second electrode, wherein the hole transport layer is formed by bringing the photoelectric conversion layer into contact with a solution containing a conductive polymer precursor and an oxidizer at a ratio of 0.1<[Ox]/[M] (wherein [Ox] is the molar concentration of the oxidizer; and [M] is the molar concentration of the conductive polymer precursor), and irradiating the photoelectric conversion layer with light.

Abstract: A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.

Abstract: A thermal management system for an electric vehicle that is used in the electric vehicle driven by an electric motor includes a refrigerant loop for an air conditioner, a refrigerant loop for a battery that allows a refrigerant for the battery to circulate among the battery, an evaporating unit and a heating device, and thermal management controlling means that, during charging of the battery, heats the refrigerant for the battery by using the heating device when temperature of the refrigerant for the battery is lower than target temperature of the refrigerant for the battery, and that allows the refrigerant for the air conditioner to circulate and to absorb heat from the refrigerant for the battery, in the evaporating unit, when the temperature of the refrigerant for the battery is higher than the target temperature of the refrigerant for the battery.

Abstract: A resistance random access memory device according an embodiment includes a first electrode, a second electrode and a resistance change layer. The first electrode includes a metal. The resistance change layer is provided between the first electrode and the second electrode. One of the metal is able to reversibly move within the resistance change layer. The second electrode is formed of a material ionizing less easily than the metal. The resistance change layer contains silicon, oxygen, and nitrogen, a nitrogen concentration of the resistance change layer is less than 46 atomic % and not less than 20 atomic %.

Abstract: According to one embodiment, an X-ray imaging apparatus includes an X-ray generation unit, an X-ray collimator, a dose detection unit, and a dose reduction rate calculation unit. The X-ray generation unit irradiates the object with X-rays. The X-ray collimator limits an X-ray irradiation range of the X-ray generation unit. The dose detection unit detects the X-rays that have passed through the X-ray collimator. The dose reduction rate calculation unit calculates a reduction rate of an exposure dose of the object based on a value detected by the dose detection unit in X-ray imaging before the X-ray irradiation range is limited by the X-ray collimator and a value detected by the dose detection unit in X-ray imaging after the X-ray irradiation range is limited by the X-ray collimator.

Abstract: A thermal management system for an electric vehicle includes a refrigerant loop for an air conditioner, a refrigerant loop for a battery that allows a refrigerant for the battery to circulate among the battery, an evaporating unit and a heating device, and a thermal management controlling unit that heats the refrigerant for the battery by using the heating device when temperature of the refrigerant for the battery is lower than allowable lower-limit temperature of the battery, and that reduces the temperature of the refrigerant for the battery to be equal to or lower than allowable upper-limit temperature of the battery by increasing an output of the compressing unit when the temperature of the refrigerant for the battery is higher than the allowable upper-limit temperature of the battery.

Abstract: A resistance random access memory device according to an embodiment includes a first electrode, a second electrode, and a variable resistance portion placed between the first electrode and the second electrode. The variable resistance portion includes a first insulating layer, a second insulating layer, and a crystal layer that is placed between the first insulating layer and the second insulating layer, has a higher resistivity than the first electrode, and is crystalline.

Abstract: A push switch according to the present invention includes a case with a substantially-box shape, a cover, a manipulation member, a movable contact point, and a spring with a substantially-U-shape. The case with the substantially-box shape is provided with a common contact point and a fixed contact point in its inner bottom surface. The movable contact point is swayably placed on the common contact point and is extended in a leftward and rightward direction. The spring with the substantially-U-shape has one end hitched on a lower surface of the cover, the other end slidably placed on an upper surface of the movable contact point, and a center portion being in elastic contact with a lower surface of the manipulation member. This enables to make the entire push switch have a reduced height and to certainly connect and separate relatively-larger electric currents of about several amperes therethrough.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode and an insulating portion. The first electrode includes an ionizable metal. The second electrode includes a conductive material. The conductive material is more difficult to ionize than the metal. The insulating portion is provided between the first electrode and the second electrode. The insulating portion is made of an insulating material. A space is adjacent to a side surface of the insulating portion between the first electrode and the second electrode.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode and a variable resistance layer. The second electrode includes a metal. The metal is more easily ionizable than a material of the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The variable resistance layer includes a first layer and a second layer. The first layer has a relatively high crystallization rate. The second layer contacts the first layer. The second layer has a relatively low crystallization rate. The first layer and the second layer are stacked along a direction connecting the first electrode and the second electrode.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode and an insulating portion. The first electrode includes an ionizable metal. The second electrode includes a conductive material. The conductive material is more difficult to ionize than the metal. The insulating portion is provided between the first electrode and the second electrode. The insulating portion is made of an insulating material. A space is adjacent to a side surface of the insulating portion between the first electrode and the second electrode.

Abstract: A semiconductor memory device according to an embodiment comprises a memory cell and a control circuit, the control circuit performing write of data to the memory cell. The memory cell includes a second resistance varying layer sandwiched between a first resistance varying layer and a third resistance varying layer. The second resistance varying layer has a resistance value which is smaller than that of the other resistance varying layers. The control circuit applies to the memory cell a first voltage pulse, and then applies to the memory cell a second voltage pulse that has a rise time which is shorter than that of the first voltage pulse.

Abstract: The reflective display device includes: a cell having: a display surface; a rear surface; side surfaces; and an interior space; a partition in a shape having radial extension dividing the rear surface into N regions; N rear electrodes respectively provided for the N regions on the rear surface; first side electrodes disposed on a display surface side and second side electrodes disposed on a rear surface side; N display-side electrodes separated by a separator zone in a shape having radial extension; a dielectric layer covering the N rear electrodes; polar liquid portions of N colors respectively disposed in N portions in the interior space; and polarity fluid placed within the interior space. A center of the partition matches with a center of the separator zone. A direction of the radial extension of the partition is different from that of the separator zone.

Abstract: A waste heat utilization apparatus is provided with a Rankine cycle and a power transmission mechanism that transmits power regenerated by an expander to an engine. The power transmission mechanism includes an expander clutch that interrupts or permits The transmission of the power from to expander to the engine. The expander includes a rotational speed sensor that detects a rotational speed of the expander. An increase in friction of the expander is detected on the basis of an increase in the rotational speed of the expander detected by the rotational speed sensor when the expander clutch is disconnected.

Abstract: Provided is technology that causes polybutylene terephthalate resin to react with a reactive compound and reduces the thermal decomposition of the polybutylene terephthalate resin, when performing reactive processing method using the polybutylene terephthalate resin. During production of polybutylene terephthalate resin pellets, the polybutylene terephthalate resin (A) and a reactive compound (B) that reacts with the polybutylene terephthalate resin (A) are reacted such that the difference between the intrinsic viscosity of a polybutylene terephthalate resin composition configuring the polybutylene terephthalate resin pellets and the intrinsic viscosity of a polybutylene terephthalate resin composition configuring a polybutylene terephthalate resin molded article is no more than 0.05 dL/g, and the amount of carboxylic group ends in the resin included in the polybutylene terephthalate resin pellets is adjusted so as to be no more than 25 meq/kg.

Abstract: A medical image processing apparatus includes, an unit (12) extracting a blood vessel wall region from the image in a range including an aneurysm in an object, an unit (13) calculating the blood vessel diameter change rates of the neck portions of the aneurysm, blood vessel curvature, and blood vessel flattening ratio at each of discrete points on a blood vessel region based on the extracted blood vessel region, an unit (14) extracting, from discrete points, feature points at each of which at least one of a blood vessel diameter change rate, blood vessel curvature, and blood vessel flattening ratio exceeds a corresponding one of thresholds and decide a range for the indwelling of a stent graft in accordance with the extracted feature points, and a display unit (19) superimposing and display unrecommended ranges on a stored image.

Abstract: A memory device according to an embodiment, includes a substrate, two or more resistance change memory cells stacked on the substrate, two or more transistors stacked on the substrate, and two or more wirings stacked on the substrate. One of the memory cells and one of the transistors are connected to each other via one of the wirings.

Abstract: A resistance random access memory device according an embodiment includes a first electrode, a second electrode and a resistance change layer. The first electrode includes a metal. The resistance change layer is provided between the first electrode and the second electrode. One of the metal is able to reversibly move within the resistance change layer. The second electrode is formed of a material ionizing less easily than the metal. The resistance change layer contains silicon, oxygen, and nitrogen, a nitrogen concentration of the resistance change layer is less than 46 atomic % and not less than 20 atomic %.

Abstract: A resistance random access memory device according to an embodiment includes a first electrode, a second electrode, and a variable resistance portion placed between the first electrode and the second electrode. The variable resistance portion includes a first insulating layer, a second insulating layer, and a crystal layer that is placed between the first insulating layer and the second insulating layer, has a higher resistivity than the first electrode, and is crystalline.

Abstract: The Rankine cycle (31) includes a refrigerant pump (32), a heat exchanger (36), an expander (37), and a condenser (38). The Rankine cycle (31) shares the condenser (38) and refrigerant with a refrigerant cycle of an air-conditioner. A refrigerant passage connecting to an outlet of the condenser (38) branches at a refrigeration cycle branch point (45) to connect to the refrigerant pump (32) and an evaporator (55). In the case of operating the Rankine cycle, without a request to operate the air-conditioner, the compressor (52) in the refrigeration cycle is driven.