Patents by Inventor Takayuki Iwasaki

Takayuki Iwasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020130369
    Abstract: The present invention provides a semiconductor integrated circuit device comprising a digital circuit and an analog circuit on a common substrate wherein a substrate effect constant of the analog circuit is at least less than a substrate effect constant of the digital circuit and wherein the analog circuit further comprises a P type polysilicon gate electrode for a nMOSFET and a N type polysilicon gate electrode for a pMOSFET.
    Type: Application
    Filed: August 10, 2001
    Publication date: September 19, 2002
    Inventors: Takayuki Iwasaki, Yusuke Takeuchi, Atsuo Watanabe
  • Patent number: 6384428
    Abstract: The present semiconductor switching device comprises a silicon carbide single crystal of hexagonal symmetry having a first conductive type and a semiconductor region of a second conductive type opposite to the first conductive type and locating in the silicon carbide single crystal. The silicon carbide single crystal of the first conductive type and the semiconductor region of the seconductive type form a pn junction. The pn junction interface has an interface extended in the depth direction from the surface of the silicon carbide single crystal, and the interface includes a crystal plane in parallel to the <1120> orientation of the silicon carbide single crystal or approximately in parallel thereto, thereby reducing the leak current.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: May 7, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Toshiyuki Oono, Takayuki Iwasaki, Tsutomu Yatsuo
  • Patent number: 6353236
    Abstract: A wide bandgap semiconductor single crystal is applied as a semiconductor substrate material of a semiconductor surge absorber, and a surge absorption operation starting voltage is set by a punchthrough of a pn junction, to obtain a semiconductor surge absorber with a repetitive operation and a high surge endurance.
    Type: Grant
    Filed: September 15, 1999
    Date of Patent: March 5, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Tsutomu Yatsuo, Takayuki Iwasaki, Hidekatsu Onose, Shin Kimura
  • Patent number: 6344809
    Abstract: In order to reduce the consumption of power of an isolator interface and an ADC, it is proposed to operate a calling signal reception or Caller ID signal reception function only with power supplied from the system switch while maintaining the on-hook condition of a telephone. At the time of normal operation, the output of the analogue digital converter is input to an isolator through the isolator interface, and at the time of the calling signal reception or the caller identification information reception, the output of the analogue digital converter is input directly to the isolator.
    Type: Grant
    Filed: November 3, 2000
    Date of Patent: February 5, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyasu Kanekawa, Yasuyuki Kojima, Seigou Yukutake, Minehiro Nemoto, Kazuhisa Takami, Takayuki Iwasaki, Yusuke Takeuchi, Yasuo Shima
  • Patent number: 6180959
    Abstract: In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region is formed partially overlapping a n-type source region, whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: January 30, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Takayuki Iwasaki, Toshiyuki Ohno, Tsutomu Yatsuo
  • Patent number: 6169672
    Abstract: A power converting apparatus comprising a group of semiconductor switches and DC terminals electrically connected to the group of semiconductor switches, in which a clamping circuit is connected to the semiconductor switches or the DC terminals. Otherwise, a diode having a wide band gap is connected in parallel with a snubber diode or a snubber capacitor of a snubber circuit connected in parallel with the semiconductor switches. With such arrangement, an overvoltage or oscillating voltage impressed on the semiconductor switches is suppressed.
    Type: Grant
    Filed: December 23, 1998
    Date of Patent: January 2, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Shin Kimura, Tsutomu Yatsuo, Takayuki Iwasaki
  • Patent number: 6065319
    Abstract: Each of a pair of rolls has a barrel with different diameters axially of the barrel such that sum of the diameters of the barrels is substantially constant and that each of the rolls is bilaterally symmetrical. The rolls themselves have an ability to control workpiece profile and have at least one substantially parallel center portion.
    Type: Grant
    Filed: September 4, 1997
    Date of Patent: May 23, 2000
    Assignee: Ishikawajima-Harima Jukogyo Kabushiki Kaisha
    Inventors: Masao Mikami, Masahiro Kuchi, Sadahiko Shinya, Takayuki Iwasaki, Takashi Nishii
  • Patent number: 4642871
    Abstract: A manufacturing method of a clutch cover assembly comprising a first process in which an annular clutch cover body of a clutch cover is formed, a plurality of projections extending substantially radially inwardly from the inner periphery of the clutch cover body are formed and ends of said projections are bent so that the projections may extend in an axially inside direction of the clutch cover and toward a center of the clutch cover; a second process in which projection bodies between the clutch cover body and said projection ends are bent so that the projection bodies may extend in the axially inside direction of the clutch cover and toward the center of the clutch cover; and a third process in which a diaphragm spring and a pair of wire rings disposed at both sides of said spring for forming fulcrums for the spring are assembled to the projections, and then, the projection bodies are bent in a radially outward direction of the clutch cover and the projections ends are bent toward the inner peripheral porti
    Type: Grant
    Filed: May 29, 1985
    Date of Patent: February 17, 1987
    Assignee: Kabushiki Kaisha Daikin Seisakusho
    Inventors: Mamoru Ookubo, Takayuki Iwasaki, Kenji Mieda
  • Patent number: 4631795
    Abstract: A manufacturing method of a clutch cover assembly comprising an annular clutch cover provided with a plurality of projections, a diaphragm spring, and a pair of wire rings supported by said projections, characterized in that; said method comprises supporting the lower surface of the diaphragm spring, to which the wire rings have been assembled, by a lower die in such a position that said projections project upwardly from a body of the clutch cover; supporting radially inner sides of portions of said projection bodies positioned below the diaphragm spring by a projection body support provided in the lower die; downwardly bending the free ends of the projections, which incline upwardly from the projection bodies, to predetermined positions by an end pushing-down portion provided in the upper die; and supporting radially inner sides of portions of said projection bodies positioned above the diaphragm spring by a projection body support provided in the upper die.
    Type: Grant
    Filed: May 29, 1985
    Date of Patent: December 30, 1986
    Assignee: Kabushiki Kaisha Daikin Seisakusho
    Inventors: Mamoru Ookubo, Takayuki Iwasaki, Kenji Mieda