Abstract: An image processing device includes: an integrated circuit chip arranged on a substrate to perform processing on image data; a first memory chip arranged adjacent to the integrated circuit chip on the substrate and connected to the integrated circuit chip; and a second memory chip stacked on the integrated circuit chip and connected to the integrated circuit chip, wherein the integrated circuit chip sets, according to the processing content, any one of a plurality of operation modes including a first operation mode to operate the first memory chip and limit operation of the second memory chip, and a second operation mode to operate the first memory chip and the second memory chip.

Abstract: An image processing device includes: an integrated circuit chip arranged on a substrate to perform processing on image data; a first memory chip arranged adjacent to the integrated circuit chip on the substrate and connected to the integrated circuit chip; and a second memory chip stacked on the integrated circuit chip and connected to the integrated circuit chip, wherein the integrated circuit chip sets, according to the processing content, any one of a plurality of operation modes including a first operation mode to operate the first memory chip and limit operation of the second memory chip, and a second operation mode to operate the first memory chip and the second memory chip.

Abstract: A lighting device for use in vehicles includes a light generating part having a substrate and a light source disposed on the substrate; a base including a light emitting part having a light emitting surface for emitting light from the light source, and a reverse surface on a backside of the light emitting surface, and a connector housing part disposed on the reverse surface and housing a connector electrically connected to the light source; and a case assembled with the base and housing the light generating part and the connector housing part. The base including the light emitting part and the connector housing part is an integral molding and constituted by a light transmitting member containing a light diffusing material.

Abstract: An integrated circuit device comprises N stacked first integrated circuit chips each of which includes a first circuit and N stacked second integrated circuit chips each of which includes a second circuit. The N stacked second integrated circuit chips are stacked on the N stacked first integrated circuit chips. A first and second integrated circuit chips at symmetric positions with respect to a reference surface are paired. Each of the first and second integrated circuit chips include connection terminals for connecting the first circuit of the first integrated circuit chip and the second circuit of the second integrated circuit chip in the pair, and through electrodes each penetrating an inside of the chip. The connection terminals and through electrodes are arranged to be symmetric with respect to the reference surface.

Abstract: A lighting device for use in vehicles includes a light generating part having a substrate and a light source disposed on the substrate; a base including a light emitting part having a light emitting surface for emitting light from the light source, and a reverse surface on a backside of the light emitting surface, and a connector housing part disposed on the reverse surface and housing a connector electrically connected to the light source; and a case assembled with the base and housing the light generating part and the connector housing part. The base including the light emitting part and the connector housing part is an integral molding and constituted by a light transmitting member containing a light diffusing material.

Abstract: An integrated circuit device comprises N stacked first integrated circuit chips each of which includes a first circuit and N stacked second integrated circuit chips each of which includes a second circuit. The N stacked second integrated circuit chips are stacked on the N stacked first integrated circuit chips. A first and second integrated circuit chips at symmetric positions with respect to a reference surface are paired. Each of the first and second integrated circuit chips include connection terminals for connecting the first circuit of the first integrated circuit chip and the second circuit of the second integrated circuit chip in the pair, and through electrodes each penetrating an inside of the chip. The connection terminals and through electrodes are arranged to be symmetric with respect to the reference surface.

Abstract: Luminous surfaces 25 of a concave-convex shape are formed on a light guide member 2 of a scuff plate, and a screen member 4 made of a non-transparent material is disposed between the light guide member 2 and a wire harness 31 of the scuff plate. The light guide member 2 luminously displays a design in a three-dimensional manner, and also the wire harness 31 will not be visually recognized through the light guide member 2, and therefore the design is enhanced.

Abstract: There is provided an LED lamp unit comprising an LED lamp, a protective component for an LED lighting circuit, a circuit section and a case part, characterized in that the circuit section has a metal plate which is embedded in the case part with its surface partially exposed, a lead of the LED lamp is electrically connected to the exposed surface of the metal plate, and the protective component for the LED lighting circuit is connected to the metal plate at an opposite side to a side where the lead of the LED lamp is connected.

Abstract: A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.

Abstract: A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.

Abstract: The invention is an indicator lamp for warning signal to a person who approaches the vehicle to steal a vehicle. The indicator lamp includes a lamp unit including a light emitting diode (LED). The indicator lamp includes a light guide including an elongated portion and a cover portion. The elongated portion receives a light from the LED at one end and conveys the light to a light emitting end. The cover portion covers the LED of the lamp unit and is integrally formed with the elongated portion. The light guide connects with the lamp unit at the cover portion. The indicator lamp prevents rainwater from the top from entering the lamp unit.

Abstract: Luminous surfaces 25 of a concave-convex shape are formed on a light guide member 2 of a scuff plate, and a screen member 4 made of a non-transparent material is disposed between the light guide member 2 and a wire harness 31 of the scuff plate. The light guide member 2 luminously displays a design in a three-dimensional manner, and also the wire harness 31 will not be visually recognized through the light guide member 2, and therefore the design is enhanced.

Abstract: An LED lamp apparatus includes an LED and a light diffuser located on a light emission side of the LED. The light diffuser is made of at least one light transmittable material and has a light diffusing member at a peripheral portion of a light passing area of the LED. Alternatively, the light diffuser may be formed of at least one light transmittable material, and the light diffusing member may be located at a center portion of the light passing area of the LED.

Abstract: A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.

Abstract: A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

Abstract: It is a light emitting apparatus having a light source, and also having a light guide element into which light from the light source is guided. The light source is accommodated in an accommodating portion formed a top-surface side of the light emitting element. In the bottom surface of the light guide element, a light emitting portion is formed at a portion which is located away from places directly below the light source and directly below an optical axis of the light source and which extends from a region placed obliquely frontwardly from the light source to a region placed laterally from the light source.

Abstract: There is provided an LED lamp unit comprising an LED lamp, a protective component for an LED lighting circuit, a circuit section and a case part, characterized in that the circuit section has a metal plate which is embedded in the case part with its surface partially exposed, a lead of the LED lamp is electrically connected to the exposed surface of the metal plate, and the protective component for the LED lighting circuit is connected to the metal plate at an opposite side to a side where the lead of the LED lamp is connected.

Abstract: A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

Abstract: Capacitors are formed on an insulating film covering the surface of a semiconductor substrate. Each capacitor is constituted of a lower electrode layer of doped silicon, a dielectric film of silicon oxide formed on the lower electrode and an upper electrode layer of polycide formed on the dielectric film. Capacitors are divided into first and second groups. In the first group, the lower electrode layers are interconnected to form a first terminal and the upper electrode layers are interconnected to form a second terminal. In the second group, the upper electrodes are all connected to the first terminal and the lower electrodes are all connected to the second terminal. A capacitor device is provided which mitigates a capacitance value change dependency upon an applied voltage and is easy to be manufactured.

Abstract: An LED lamp has: a sealing member; first, second and third leads, a part of the first, second and third leads being surrounded by the sealing member; an LED chip mounted on the first lead; and a wire disposed connecting the second lead and the LED chip. The third lead is connected through an electrical path to the first or second lead.