Abstract: An LED lamp has: a sealing member; first, second and third leads, a part of the first, second and third leads being surrounded by the sealing member; an LED chip mounted on the first lead; and a wire disposed connecting the second lead and the LED chip. The third lead is connected through an electrical path to the first or second lead.

Abstract: In an LED lamp apparatus comprising an LED, a circuit portion and a case portion, a pair of the leads of the LED are surrounded at their parts by a sealing member and are extended to comprise the circuit portion, then at least one of the leads constituting the circuit portion is provided with a gap, and an element is disposed so as to extend over the gap.

Abstract: The invention is an indicator lamp for warning signal to a person who approaches the vehicle to steal a vehicle. The indicator lamp includes a lamp unit including a light emitting diode (LED). The indicator lamp includes a light guide including an elongated portion and a cover portion. The elongated portion receives a light from the LED at one end and conveys the light to a light emitting end. The cover portion covers the LED of the lamp unit and is integrally formed with the elongated portion. The light guide connects with the lamp unit at the cover portion. The indicator lamp prevents rainwater from the top from entering the lamp unit.

Abstract: A gate insulating film is formed on the surface of a semiconductor substrate in an opening of a field insulating film, and thereafter a gate electrode and a capacitor lower electrode made of doped polysilicon or the like are formed on the insulating film. Pocket regions are formed by an ion implantation process using the field insulating film and gate electrode as a mask, and thereafter an insulating layer is formed by CVD or the like covering the electrodes. Extension regions are formed by an ion implantation process via the insulating layer. An offset distance between the pocket region and the associated extension region can be determined at a high precision in accordance with a thickness of the insulating layer. After side spacers are formed, high concentration source/drain regions are formed.

Abstract: In the illumination device of the invention, an LED is oppose to a side surface of a flat light guide member. A light shield surface for shielding light from the LED and emitted toward the backside of the guide member in vicinity of the LED on the backside of the light guide member.

Abstract: The invention is directed to provide a vehicle interior illumination device which has a high illuminating effect and which can be used for various kinds of illumination in a vehicle. The illumination device disposed in a roof portion of the interior of a vehicle, including: a first light-emitting section having a first light source constituted by a plurality of first LEDs disposed at substantially regular spaces; and a second light-emitting section having a second light source constituted by a second LED, and a second outer lens with which a light emission side of the second light source is covered and by which light emitted from said second light source is converged and radiated out.

Abstract: A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.

Abstract: An LED lamp apparatus includes an LED and a light diffuser located on a light emission side of the LED. The light diffuser is made of at least one light transmittable material and has a light diffusing member at a peripheral portion of a light passing area of the LED. Alternatively, the light diffuser may be formed of at least one light transmittable material, and the light diffusing member may be located at a center portion of the light passing area of the LED.

Abstract: A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

Abstract: An LED lamp apparatus comprises LED, a circuit member, and a case member. The case member has an LED seat for holding the LED. The circuit member has metal plates embedded in the case member. The metal plates have LED connection members exposed from the case member. The LED connection members have been resistance welded respectively to leads of the LED.

Abstract: A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

Abstract: The invention is directed to provide a vehicle interior illumination device which has a high illuminating effect and which can be used for various kinds of illumination in a vehicle. The illumination device disposed in a roof portion of the interior of a vehicle, including: a first light-emitting section having a first light source constituted by a plurality of first LEDs disposed at substantially regular spaces; and a second light-emitting section having a second light source constituted by a second LED, and a second outer lens with which a light emission side of the second light source is covered and by which light emitted from said second light source is converged and radiated out.

Abstract: The invention is directed to provide a vehicle interior illumination device which has a high illuminating effect and which can be used for various kinds of illumination in a vehicle. The illumination device disposed in a roof portion of the interior of a vehicle, including: a first light-emitting section having a first light source constituted by a plurality of first LEDs disposed at substantially regular spaces; and a second light-emitting section having a second light source constituted by a second LED, and a second outer lens with which a light emission side of the second light source is covered and by which light emitted from said second light source is converged and radiated out.

Abstract: A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

Abstract: In a VR motion producing apparatus and an apparatus, comprising: a reception unit for receiving a presently projected picture frame No. from a picture apparatus; a detection unit for detecting a frame No. of operation data of a motion base presently executed by a motion base; a difference unit for comparing the picture frame No. with the motion frame No. to calculate a difference between them; a calculation unit for calculating an operation velocity of a motion base so as to correct this difference value; and a synchronization unit for reducing the difference between the picture frame No. and the motion frame No.

Abstract: The invention is directed to provide a vehicle interior illumination device which has a high illuminating effect and which can be used for various kinds of illumination in a vehicle. The illumination device disposed in a roof portion of the interior of a vehicle, including: a first light-emitting section having a first light source constituted by a plurality of first LEDs disposed at substantially regular spaces; and a second light-emitting section having a second light source constituted by a second LED, and a second outer lens with which a light emission side of the second light source is covered and by which light emitted from said second light source is converged and radiated out.

Abstract: An LED lamp apparatus comprises LED, a circuit member, and a case member. The case member has an LED seat for holding the LED. The circuit member has metal plates embedded in the case member. The metal plates have LED connection members exposed from the case member.

Abstract: A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

Abstract: A lighting device has an LED light source and a lens. The lens includes a light emitting surface arranged substantially parallel to a wall of a container when the device is attached to the wall, and a first light receiving surface. The first light receiving surface receives light that is emitted from the LED light source in a direction slanted with respect to the light emitting surface, and takes a concave surface configured such that a distance of the first light receiving surface to the light emitting surface increases from one end to the other end of the lens. The LED light source is disposed while being confronted with one end part of the lens.

Abstract: In a VR motion producing apparatus and an apparatus, comprising: a reception unit for receiving a presently projected picture frame No. from a picture apparatus; a detection unit for detecting a frame No. of operation data of a motion base presently executed by a motion base; a difference unit for comparing the picture frame No. with the motion frame No. to calculate a difference between them; a calculation unit for calculating an operation velocity of a motion base so as to correct this difference value; and a synchronization unit for reducing the difference between the picture frame No. and the motion frame No.