Abstract: Provided are a metal wire rod drawing die that has a longer life than conventional dies and that can prevent damage to a metal wire rod surface and a method for manufacturing the die. In a metal wire rod drawing die (1), a die hole (2) for inserting a metal wire rod is formed. Where Ra1 represents a surface roughness of an inner surface of the die hole from a bearing section (2b) to an approach section (2a) corresponding to an area reduction rate of 30% in an axial direction of the die hole, Ra2 represents a surface roughness of the inner surface of the die hole from the bearing section to the approach section corresponding to the area reduction rate of 30% in a direction orthogonal to the axial direction of the die hole, and Ra3 represents a surface roughness of an inner surface of the bearing section of the die hole in the axial direction of the die hole, the Ra1, the Ra2, and the Ra3 satisfy a relationship represented by 0.14 ?m>Ra2>Ra1>Ra3.

Abstract: An industrial robot is provided with a horizontal multistage telescopic device. In the device, a slider is mounted to s base so as to be movable in a first direction and in a second direction which are opposite to each other along the horizontal direction. An output arm has an end in the second direction, the end being provided with an output arm support, and is expanded in the first direction from the output arm support. The output arm support is mounted to a slider so as to be horizontally movable in the first and second directions. The output arm has an end in the first direction, to which an end effector is mounted. A motor is mounted to an end of the slider in the second direction. A rotation transmitting member transmits torque of the motor to a second rotor of a movement mechanism.

Abstract: In order to provide a temperature and humidity sensor with improved reliability, the temperature and humidity sensor in which all or part of a case of the temperature and humidity sensor is inserted into a main duct for causing gas to pass through and which detects humidity of the gas, includes: a first sub-passage configured as a part of the case, a part of the gas passing through the main duct flowing in substantially the same direction as a flow in the main duct; a throttle section provided between an inlet and an outlet of the first sub-passage and on an inner surface of the first sub-passage, the throttle section having a throttle whose cross-sectional area is smaller than an average cross-sectional area of the entire first sub-passage; and a second sub-passage which connects an upstream side and a downstream side of the throttle section and is different from the first sub-passage.

Abstract: A highly sensitive humidity measurement device is provided. The humidity measurement device has: a housing component integrally including a connector for performing input/output to/from the outside and a connector terminal component; an electronic circuit board mounted on the housing component and electrically connected to the connector terminal; and a humidity sensing element provided on the electronic circuit board. When the humidity measurement device is installed in an installation hole that is provided in a part of a main air flow passage through which suction air flows, apart of the housing component is exposed to the suction air flowing through the main air flow passage. The housing component is provided with a bypass passage to suction a part of the suction air. The bypass passage includes a bypass inlet opening that serves as a suction port of the suction air and a bypass outlet opening that discharges the suction air. The bypass outlet opening is exposed to the suction air.

Abstract: An underfill material achieving a wide margin for mounting and a method for manufacturing a semiconductor device using the same are provided. The underfill material contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, wherein a minimum melt viscosity attainment temperature and a minimum melt viscosity obtained when melt viscosity of the underfill material is measured under a temperature increase rate condition in a range of 5 to 50° C./min are in a range of 100° C. to 150° C. and in a range of 100 to 5000 Pa·s, respectively. Since variation in the minimum melt viscosity attainment temperature measured under different temperature increase conditions is small, voidless mounting and good solder bonding properties can be achieved without strict control on the temperature profile during thermocompression bonding, and a wide margin for mounting can be achieved.

Abstract: Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads.

Abstract: An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

Abstract: In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

Abstract: An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

Abstract: Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads.

Abstract: A connection device includes a mounting section on which an electronic component stacked with a thermosetting adhesive agent layer is mounted, a heat press head for heating and pressing the electronic component, a first elastic body that is disposed between the electronic component and a pressing surface of the heat press head so as to press an upper surface of the electronic component, and a support member that is disposed on a periphery of the electronic component and supports the first elastic body.

Abstract: Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads.

Abstract: A thermally conductive adhesive having: a thermosetting adhesive containing a curable component and a curing agent for the curable component, and a metal filler dispersed in the thermosetting adhesive uses a silver powder and a solder powder as the metal filler. The solder powder to be used has a melting temperature lower than the thermal curing temperature of the thermally conductive adhesive and produces a high-melting-point solder alloy having a melting point higher than the melting temperature of the solder powder when the solder powder is reacted with the silver powder under thermal curing conditions of the thermally conductive adhesive. A curing agent having flux activity to the metal filler is used as the curing agent.

Abstract: Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads.

Abstract: In a display apparatus according to one embodiment, a substantially oblong display panel has a flat placement area adjacent to one corner on a back surface, and a frame retaining the display panel is composed of four metal bezel members attached to four sides, and two nonconductive bezel members attached to two sides in order to extend two metal bezel members and constituting a substantially L-shape. A triangular area is defined by the two nonconductive bezel members. A pair of antennas is provided in the flat placement area so as to be substantially symmetrical with respect to a bisector bisecting a corner. An antenna module provided on the placement area drives the antennas in order to constitute a group of antennas communicating at a same time in a same system.

Abstract: A light-emitting apparatus is provided with: a light-emitting module; a control circuit unit configured to control the lighting of the light-emitting module; a heat-radiating substrate configured to support the light-emitting module and the control circuit unit in such a manner as to recover the heat produced by the light-emitting module and the control circuit unit; and a connection support unit mounted on the heat-radiating substrate in such a state as to support an electrically conductive member by which to electrically connect the light-emitting module and the control circuit unit.

Abstract: In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

Abstract: An industrial robot is provided with a horizontal multistage telescopic device. In the device, a slider is mounted to s base so as to be movable in a first direction and in a second direction which are opposite to each other along the horizontal direction. An output arm has an end in the second direction, the end being provided with an output arm support, and is expanded in the first direction from the output arm support. The output arm support is mounted to a slider so as to be horizontally movable in the first and second directions. The output arm has an end in the first direction, to which an end effector is mounted. A motor is mounted to an end of the slider in the second direction. A rotation transmitting member transmits torque of the motor to a second rotor of a movement mechanism.

Abstract: Provided is a method for producing a metal wire with improved productivity in which a conventional drawing machine is used while wear of a die or occurrence of a break due to the ductility loss thereof is effectively prevented. Provided is a method for producing a metal wire 1 including a process of drawing a metal wire by using a slip type drawing machine. For a cone 11 of the slip type drawing machine, a cone having an even surface without an inclination angle with respect to the axis of rotation is used, as well as, a die 12 of the slip type drawing machine is positioned such that the metal wire 1 passes a location nearest to a drive unit in the direction parallel to the axis of rotation of the cone 11.