Patents by Inventor Takayuki Tsutsui
Takayuki Tsutsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7123095Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.Type: GrantFiled: January 13, 2005Date of Patent: October 17, 2006Assignee: Renesas Technology Corp.Inventors: Takayuki Tsutsui, Shinji Yamada, Yasuhiro Nunogawa
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Patent number: 7123094Abstract: Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.Type: GrantFiled: April 12, 2004Date of Patent: October 17, 2006Assignee: Renesas Technology Corp.Inventors: Kenji Tahara, Takayuki Tsutsui, Tetsuaki Adachi
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Patent number: 7116173Abstract: A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.Type: GrantFiled: February 28, 2002Date of Patent: October 3, 2006Assignee: Renesas Technology Corp.Inventors: Takayuki Tsutsui, Masahiro Tsuchiya, Tetsuaki Adachi
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Publication number: 20060192616Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.Type: ApplicationFiled: February 24, 2006Publication date: August 31, 2006Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
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Patent number: 7078974Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: GrantFiled: September 16, 2005Date of Patent: July 18, 2006Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 7053708Abstract: There are provided an electronic component for high frequency power amplification provided with a high-sensitivity output power detection circuit which is immune to the influence of changes in the use environment thereof, free of an output mismatch, small in size, and low in insertion loss and a wireless communication system using the electronic component.Type: GrantFiled: April 8, 2004Date of Patent: May 30, 2006Assignee: Renesas Technology Corp.Inventors: Hiroyuki Nagamori, Yasuhiro Nunogawa, Takayuki Tsutsui
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Publication number: 20060006944Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: ApplicationFiled: September 16, 2005Publication date: January 12, 2006Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Publication number: 20050280471Abstract: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.Type: ApplicationFiled: June 10, 2005Publication date: December 22, 2005Inventors: Kouichi Matsushita, Kenichi Shimamoto, Kazuhiro Koshio, Kazuhiko Ishimoto, Takayuki Tsutsui
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Patent number: 6967535Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: GrantFiled: March 15, 2005Date of Patent: November 22, 2005Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 6958649Abstract: A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit.Type: GrantFiled: April 4, 2005Date of Patent: October 25, 2005Assignees: Renesas Technology Corp, Hitachi Hybrid Network, Co., Ltd.Inventors: Hiroyuki Nagamori, Takayuki Tsutsui, Kouichi Matsushita
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Publication number: 20050218989Abstract: A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.Type: ApplicationFiled: February 28, 2002Publication date: October 6, 2005Inventors: Takayuki Tsutsui, Masahiro Tsuchiya, Tetsuaki Adachi
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Publication number: 20050179498Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.Type: ApplicationFiled: January 13, 2005Publication date: August 18, 2005Inventors: Takayuki Tsutsui, Shinji Yamada, Yasuhiro Nunogawa
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Publication number: 20050168281Abstract: A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit.Type: ApplicationFiled: April 4, 2005Publication date: August 4, 2005Inventors: Hiroyuki Nagamori, Takayuki Tsutsui, Kouichi Matsushita
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Publication number: 20050156672Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: ApplicationFiled: March 15, 2005Publication date: July 21, 2005Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 6885246Abstract: The present invention provides a high frequency amplifier using a power supply voltage regulate circuit for the purpose of compensating for variations in power supply voltage. The high frequency amplifier comprises three-stage power amplifiers which amplify an input signal and output the amplified signal, a bias circuit which supplies bias voltages for controlling these power amplifiers, a regulate circuit which compensates for variations in noise or gain with respect to the variations in the power supply voltage for driving the power amplifiers, etc. The regulate circuit holds constant an output voltage Vddc with respect to variations in power supply voltage Vdd and outputs the constant-held output voltage Vddc as a power supply voltage for the power amplifiers.Type: GrantFiled: February 21, 2003Date of Patent: April 26, 2005Assignee: Renesas Technology Corp.Inventors: Takayuki Tsutsui, Hiroyuki Nagamori, Kouichi Matsushita, Nobuhiro Matsudaira
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Publication number: 20040263254Abstract: Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.Type: ApplicationFiled: April 12, 2004Publication date: December 30, 2004Applicant: Renesas Technology Corp.Inventors: Kenji Tahara, Takayuki Tsutsui, Tetsuaki Adachi
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Publication number: 20040229579Abstract: In radio communication system that is able to transmit in two or more modulation modes, e.g., one modulation mode when phase shifts are performed and another modulation mode when phase shifts and amplitude shifts are performed, the disclosed invention can avoid that receiving band noise becomes so great not to conform to the GSM standards' prescription for such noise in a high voltage region of the power supply voltage, even when the output power is controlled by changing the amplitude of the input signal to the power amplifier circuitry while fixing the bias voltages to be applied to the power amplifying transistors. When the output power is controlled as above, in the modulation mode (GSM mode) when phase shifts are performed, idle currents flowing across the power amplifying transistors are regulated, depending on the power supply voltage, i.e., the idle currents are decreased when the power supply voltage is high and increased when the power supply voltage is low.Type: ApplicationFiled: May 13, 2004Publication date: November 18, 2004Applicants: Renesas Technology Corp., Hitachi Hybrid Network Co., Ltd.Inventors: Takayuki Tsutsui, Hiroyuki Nagamori, Kouichi Matsushita
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Publication number: 20040212434Abstract: There are provided an electronic component for high frequency power amplification provided with a high-sensitivity output power detection circuit which is immune to the influence of changes in the use environment thereof, free of an output mismatch, small in size, and low in insertion loss and a wireless communication system using the electronic component.Type: ApplicationFiled: April 8, 2004Publication date: October 28, 2004Applicant: Renesas Technology Corp.Inventors: Hiroyuki Nagamori, Yasuhiro Nunogawa, Takayuki Tsutsui
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Publication number: 20040164808Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: ApplicationFiled: February 25, 2004Publication date: August 26, 2004Applicants: RENESAS TECHNOLOGY CORP., HITACHI COMMUNICATION SYSTEMS, INC.Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 6756850Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: GrantFiled: May 17, 2002Date of Patent: June 29, 2004Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira