Abstract: An radio frequency amplifying circuit includes an amplifying transistor configured to amplify a radio frequency signal input to a base of the amplifying transistor via a matching network to output the amplified radio frequency signal, a first bias transistor connected to the amplifying transistor based on a current-mirror connection to supply a bias to the amplifying transistor, and a second bias transistor connected to the base of the amplifying transistor based on an emitter-follower connection to supply a bias to the amplifying transistor.

Abstract: In a semiconductor integrated circuit apparatus and a radio-frequency power amplifier module, a log detection portion including multiple-stage amplifier circuits, multiple level detection circuits, adder circuits, and a linear detection portion including a level detection circuit are provided. Output current from the log detection portion and output current from the linear detection portion are multiplied by different coefficients and the results of the multiplication are added to each other to realize the multiple detection methods. For example, current resulting from multiplication of the output current from the log detection portion by ×6/5 is added to the output current from the linear detection portion to realize a log detection method and, current resulting from multiplication of the output current from the log detection portion by ×? is added to current resulting from multiplication of the output current from the linear detection portion by ×3 to realize a log-linear detection method.

Abstract: In a semiconductor integrated circuit apparatus and a radio-frequency power amplifier module, a log detection portion including multiple-stage amplifier circuits, multiple level detection circuits, adder circuits, and a linear detection portion including a level detection circuit are provided. Output current from the log detection portion and output current from the linear detection portion are multiplied by different coefficients and the results of the multiplication are added to each other to realize the multiple detection methods. For example, current resulting from multiplication of the output current from the log detection portion by ×6/5 is added to the output current from the linear detection portion to realize a log detection method and, current resulting from multiplication of the output current from the log detection portion by ×1/5 is added to current resulting from multiplication of the output current from the linear detection portion by ×3 to realize a log-linear detection method.

Abstract: A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amplification transistor which are coupled so as to configure a current mirror circuit, and a gate length monitor circuit comprising a replicating transistor. The amplification transistor amplifies an RF signal and a bias current of the bias control circuit is supplied to the bias transistor. The transistors are fabricated by the same semiconductor manufacturing process, and have the same variation of gate length. The gate length monitor circuit generates a detection voltage depending on the gate length. According to the detection voltage, the bias control circuit controls the bias current, thereby compensating the gate length dependence of transconductance of the amplification transistor.

Abstract: A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amplification transistor which are coupled so as to configure a current mirror circuit, and a gate length monitor circuit comprising a replicating transistor. The amplification transistor amplifies an RF signal and a bias current of the bias control circuit is supplied to the bias transistor. The transistors are fabricated by the same semiconductor manufacturing process, and have the same variation of gate length. The gate length monitor circuit generates a detection voltage depending on the gate length. According to the detection voltage, the bias control circuit controls the bias current, thereby compensating the gate length dependence of transconductance of the amplification transistor.

Abstract: The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another.

Abstract: Transmission in DCS1800, PCS1900, and WCDMA1900 is performed by a common second RE power amplifier. In DCS1800 and DCS1900, transmission power is set in a high transmission power mode at 33 dBm by a high-gain input amplifier to activate an internal voltage follower of a bias circuit, and in WCDMA1900, in a low transmission power mode at 28 to 29 dBm by a low-gain input amplifier to inactivate the voltage follower. Switching of the high and low transmission power modes and controlling the voltage follower are performed according to a mode signal. In an RF power amplifier module that transmits frequencies of GSM850, GSM900, DCS1800, PCS1900, and WCDMA1900, it is possible to reduce the number of power amplifiers and, for ramp-up and ramp-down of the GSM standard, to perform high-speed control of an input bias voltage and reduce noise of a transmission power of a wideband WCDMA.

Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.

Abstract: The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another.

Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.

Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.

Abstract: In radio communication system that is able to transmit in two or more modulation modes, e.g., one modulation mode when phase shifts are performed and another modulation mode when phase shifts and amplitude shifts are performed, the disclosed invention can avoid that receiving band noise becomes so great not to conform to the GSM standards' prescription for such noise in a high voltage region of the power supply voltage, even when the output power is controlled by changing the amplitude of the input signal to the power amplifier circuitry while fixing the bias voltages to be applied to the power amplifying transistors. When the output power is controlled as above, in the modulation mode (GSM mode) when phase shifts are performed, idle currents flowing across the power amplifying transistors are regulated, depending on the power supply voltage, i.e., the idle currents are decreased when the power supply voltage is high and increased when the power supply voltage is low.

Abstract: A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.

Abstract: Transmission in DCS1800, PCS1900, and WCDMA1900 is performed by a common second RF power amplifier. In DCS1800 and DCS1900, transmission power is set in a high transmission power mode at 33 dBm by a high-gain input amplifier to activate an internal voltage follower of a bias circuit, and in WCDMA1900, in a low transmission power mode at 28 to 29 dBm by a low-gain input amplifier to inactivate the voltage follower. Switching the high and low transmission power modes and controlling the voltage follower are performed according to a mode signal. In an RF power amplifier module that transmits frequencies of GSM850, GSM900, DCS1800, PCS1900, and WCDMA1900, it is possible to reduce the number of power amplifiers and, for ramp-up and ramp-down of the GSM standard, to perform high-speed control of an input bias voltage and reduce noise of a transmission power of a wideband WCDMA.

Abstract: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.

Abstract: Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.

Abstract: Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.

Abstract: A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.