Abstract: An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

Abstract: A method of manufacturing a semiconductor device includes forming, over a semiconductor substrate comprising a first region and a second region, a patterned first film in which an upper face of a portion located over the first region is positioned at a lower height from the semiconductor substrate than an upper face of a portion located over the second region, forming, over the first film, a second film which is an insulating film, a portion of the second film penetrating the first film and being located inside a trench of the semiconductor substrate, and polishing the second film to remove a portion of the second film located over the first film. An occupancy of the trench in the first region is lower than an occupancy of the trench in the second region.

Abstract: A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.

Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.

Abstract: A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Abstract: A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole.

Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Abstract: A method for manufacturing a solid-state image sensing device includes forming a first insulating film on a semiconductor substrate, planarizing the first insulating film, forming a second insulating film after the planarization, forming an opening in the first and the second insulating film, and forming an optical waveguide by forming a filling member in the opening. The thickness of the first insulating film is measured before the formation of the second insulating film, and the second insulating film is formed to a thickness according to the thickness of the first insulating film.

Abstract: A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Abstract: A method of manufacturing a semiconductor device includes forming, over a semiconductor substrate comprising a first region and a second region, a patterned first film in which an upper face of a portion located over the first region is positioned at a lower height from the semiconductor substrate than an upper face of a portion located over the second region, forming, over the first film, a second film which is an insulating film, a portion of the second film penetrating the first film and being located inside a trench of the semiconductor substrate, and polishing the second film to remove a portion of the second film located over the first film. An occupancy of the trench in the first region is lower than an occupancy of the trench in the second region.

Abstract: A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.

Abstract: There are provided a first waveguide member in an imaging region and a peripheral region of a semiconductor substrate and a via plug penetrating the first waveguide member.

Abstract: A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.

Abstract: A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.

Abstract: An interlayer insulating film is disposed above an image pickup region and a peripheral region of the semiconductor substrate. An opening is formed in the interlayer insulating film at a position overlying a photoelectric conversion portion. A waveguide member is formed above the image pickup region and the peripheral region of the semiconductor substrate. A part of the waveguide member, which part is disposed above the peripheral region, is removed such that the interlayer insulating film is exposed.

Abstract: Manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a first region and a second region, a first insulating film arranged on the first region, a second insulating film arranged on the first insulating film, a third insulating film arranged on the second insulating film, a fourth insulating film arranged on the second region, a fifth insulating film arranged on the fourth insulating film, and a sixth insulating film arranged on the fifth insulating film, etching the second insulating film and the first insulating film under different etching conditions after etching the third insulating film, and continuously etching the fifth insulating film and the fourth insulating film under the same etching conditions after etching the sixth insulating film.

Abstract: A method for manufacturing a semiconductor device, the method comprising, forming a first opening in a first insulating layer provided above a semiconductor substrate, forming a first contact plug by depositing a conductive member in the first opening and removing a part of the conductive member so as to expose the first insulating layer, forming a second insulating layer over the first insulating layer after forming the first contact plug, forming a second opening in the first and second insulating layers without exposing the first contact plug, forming a second contact plug by depositing the conductive member in the second opening and removing a part of the conductive member so as to expose the second insulating layer, and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug.