Patents by Inventor Takehito Okabe
Takehito Okabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8786044Abstract: A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T1<T2<?/2?T1 is satisfied, where an optical thickness of the first region is T1, an optical thickness of the second region is T2, and a wavelength of a light incident on the photoelectric conversion part is ?.Type: GrantFiled: October 1, 2012Date of Patent: July 22, 2014Assignee: Canon Kabushiki KaishaInventors: Ryuichi Mishima, Hideaki Ishino, Kenji Togo, Masatsugu Itahashi, Takehito Okabe
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Publication number: 20140045294Abstract: A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole.Type: ApplicationFiled: August 5, 2013Publication date: February 13, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Tadashi Sawayama, Takashi Usui, Akihiro Kawano, Hiroaki Naruse, Sho Suzuki, Takehito Okabe, Masatsugu Itahashi, Daisuke Uki
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Publication number: 20140045292Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.Type: ApplicationFiled: August 5, 2013Publication date: February 13, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Yusuke Tsukagoshi, Tadashi Sawayama, Akihiro Kawano, Sho Suzuki, Takehito Okabe, Masatsugu Itahashi
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Patent number: 8551873Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.Type: GrantFiled: September 11, 2012Date of Patent: October 8, 2013Assignee: Canon Kabushiki KaishaInventors: Yusuke Onuki, Takehito Okabe, Hideaki Ishino
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Publication number: 20130089975Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.Type: ApplicationFiled: September 11, 2012Publication date: April 11, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Yusuke Onuki, Takehito Okabe, Hideaki Ishino
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Patent number: 8293559Abstract: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.Type: GrantFiled: June 16, 2011Date of Patent: October 23, 2012Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Hiroaki Naruse, Ryuichi Mishima, Kouhei Hashimoto
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Publication number: 20120199893Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.Type: ApplicationFiled: February 3, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Kentarou Suzuki, Takashi Usui, Taro Kato, Mineo Shimotsusa, Shunsuke Takimoto
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Publication number: 20120199928Abstract: There are provided a first waveguide member in an imaging region and a peripheral region of a semiconductor substrate and a via plug penetrating the first waveguide member.Type: ApplicationFiled: February 2, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Yoshiharu Sawada, Sho Suzuki, Takehito Okabe, Masatsugu Itahashi, Takashi Usui, Junji Iwata
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Publication number: 20120202312Abstract: An interlayer insulating film is disposed above an image pickup region and a peripheral region of the semiconductor substrate. An opening is formed in the interlayer insulating film at a position overlying a photoelectric conversion portion. A waveguide member is formed above the image pickup region and the peripheral region of the semiconductor substrate. A part of the waveguide member, which part is disposed above the peripheral region, is removed such that the interlayer insulating film is exposed.Type: ApplicationFiled: February 6, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Kentaro Suzuki, Takehito Okabe, Hiroaki Sano, Junji Iwata
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Publication number: 20120202307Abstract: A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.Type: ApplicationFiled: February 3, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Sho Suzuki, Takehito Okabe, Masatsugu Itahashi
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Publication number: 20110244627Abstract: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.Type: ApplicationFiled: June 16, 2011Publication date: October 6, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Hiroaki Naruse, Ryuichi Mishima, Kouhei Hashimoto
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Patent number: 8029685Abstract: A method of manufacturing a liquid ejection head and a liquid ejection head capable of preventing corrosion of electrodes are provided. The method of manufacturing a liquid ejection head includes: a step of forming porous silicon areas in portions of a silicon substrate where the liquid paths are to be formed; a step of forming in layers in the porous silicon areas a protective layer, a heating resistor layer, an electrode layer and a heat accumulation layer; a step of forming ink ejection openings in the silicon substrate; and a step of removing the porous silicon areas.Type: GrantFiled: September 4, 2007Date of Patent: October 4, 2011Assignee: Canon Kabushiki KaishaInventors: Hirokazu Komuro, Makoto Kurotobi, Tadashi Atoji, Takehito Okabe
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Patent number: 7993951Abstract: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.Type: GrantFiled: June 3, 2010Date of Patent: August 9, 2011Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Hiroaki Naruse, Ryuichi Mishima, Kouhei Hashimoto
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Publication number: 20100330723Abstract: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.Type: ApplicationFiled: June 3, 2010Publication date: December 30, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Hiroaki Naruse, Ryuichi Mishima, Kouhei Hashimoto
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Publication number: 20100225712Abstract: A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.Type: ApplicationFiled: May 17, 2010Publication date: September 9, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Patent number: 7743503Abstract: A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.Type: GrantFiled: September 1, 2005Date of Patent: June 29, 2010Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Patent number: 7636993Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.Type: GrantFiled: September 6, 2005Date of Patent: December 29, 2009Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Method for producing piezoelectric film actuator, and composite structure having piezoelectric layer
Publication number: 20080307622Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.Type: ApplicationFiled: April 18, 2008Publication date: December 18, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku -
Publication number: 20080076197Abstract: A method of manufacturing a liquid ejection head and a liquid ejection head capable of preventing corrosion of electrodes are provided. A method of manufacturing a liquid ejection head includes: a steps of forming porous silicon areas in portions of a silicon substrate where the liquid paths are to be formed; a steps of forming in layers in the porous silicon areas a protective layer, a heating resistor layer, an electrode layer and a heat accumulation layer; a steps of forming ink ejection openings in the silicon substrate; and a steps of removing the porous silicon areas.Type: ApplicationFiled: September 4, 2007Publication date: March 27, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Hirokazu Komuro, Makoto Kurotobi, Tadashi Atoji, Takehito Okabe
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Publication number: 20070243330Abstract: Disclosed is a manufacturing method of a liquid discharge head having a discharge port which discharges a liquid, a flow path which communicates with the discharge port, a heating portion which is disposed correspondingly to the flow path and which generates heat energy for use in discharging the liquid from the discharge port and a protective layer which prevents the heating portion from being brought into contact with the liquid, the method comprising: forming porous silicon from a surface to an inner portion of a silicon substrate; sealing pores present in the surface of the porous silicon to smoothen the surface of the porous silicon; forming the protective layer on the smoothened surface of the porous silicon; forming the heating portion on the protective layer; forming the discharge port; and removing the porous silicon to form the flow path.Type: ApplicationFiled: March 29, 2007Publication date: October 18, 2007Applicant: CANON KABUSHIKI KAISHAInventors: Hirokazu Komuro, Makoto Kurotobi, Tadashi Atoji, Takehito Okabe