Abstract: An optical system includes an object side lens unit arranged closest to an object, immobilized in focusing, and having a positive refractive power, an image plane side lens unit arranged closest to an image plane and having a negative refractive power, and a first focus lens unit and a second focus lens unit which are arranged between the object side lens unit and the image plane side lens unit and are moved in focusing. The object side lens unit consists of a first partial unit having the negative refractive power, a second partial unit having the positive refractive power, a third partial unit having the positive or the negative refractive power which are arranged in order from an object side to an image plane side. The second partial unit is moved in a direction including a component in a perpendicular direction to an optical axis in image blur correction.

Abstract: According to one embodiment, a semiconductor memory device includes: first interconnect layers; second interconnect layers; a first memory pillar extending through the first interconnect layers; a second memory pillar extending through the second interconnect layers; a first film provided above the first interconnect layers, having a planar shape corresponding to the first interconnect layers and extending in the first direction; and a second film provided above the second interconnect layers, separate from the first film in the second direction, having a planar shape corresponding to the second interconnect layers and extending in the first direction. The first and second films have a compressive stress higher than a silicon oxide film.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: An optical system includes a front lens group and a rear lens group that are disposed in order from an object side to an image side of the optical system, the front lens group having a positive refractive power and the rear lens group having a negative refractive power. The rear lens group consists of a lens unit Ln1 that is arranged to move towards the image side when focusing and that has a negative refractive power, and a lens unit Ln2 that is disposed closer to the image side than the lens unit Ln1 and that has a negative refractive power. The front lens group includes a lens unit Lpf arranged to move during focusing. The rear lens group satisfies a predetermined conditional expression.

Abstract: Provided is a zoom lens including, in order from an object side to an image side: a first lens unit having a positive refractive power; a second lens unit having a negative refractive power; a third lens unit having a positive refractive power; a fourth lens unit having a negative refractive power; a fifth lens unit having a negative refractive power; and a sixth lens unit having a positive refractive power, wherein an interval between adjacent lens units is changed during zooming, wherein the first lens unit is configured to move toward the object side during zooming from a wide angle end to a telephoto end, and wherein a focal length of the first lens unit, a focal length of the sixth lens unit, and a back focus at the wide angle end are appropriately set.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: The optical system according to the present invention consists of a first lens unit with positive refractive power disposed closest to an object side, a middle group including at least two lens units, and a final lens unit with negative refractive power disposed closest to an image side in which intervals between adjacent lens units are changed during focusing. The middle group includes a first focus lens unit configured to move during focusing, and a second focus lens unit disposed on the image side of the first focus lens unit and configured to move during focusing. An aperture stop is disposed between two lenses included in the middle group. Here, a focal length of the optical system, a focal length of the final lens unit, and a focal length of a second focus lens unit are appropriately determined.

Abstract: Provided is a processing apparatus, which is mounted to any one of a lens apparatus including an optical system and an image pickup apparatus for picking up an image formed by an optical system, in which the processing apparatus includes a determination unit configured to determine a first shift amount of a first shift lens unit and a second shift amount of a second shift lens unit, and both of the first shift lens unit and the second shift lens unit are included in the optical system, and movable in a direction having a component perpendicular to an optical axis direction. The determination unit determines the first and second shift amounts based on information representing an optical state of the optical system, optical information on each of the first and second shift lens units, which corresponds to the information, and information representing a predetermined object plane tilt amount.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: Provided is a zoom lens including, in order from an object side to an image side: a first lens unit having a positive refractive power; a second lens unit having a negative refractive power; a third lens unit having a positive refractive power; a fourth lens unit having a negative refractive power; a fifth lens unit having a negative refractive power; and a sixth lens unit having a positive refractive power, wherein an interval between adjacent lens units is changed during zooming, wherein the first lens unit is configured to move toward the object side during zooming from a wide angle end to a telephoto end, and wherein a focal length of the first lens unit, a focal length of the sixth lens unit, and a back focus at the wide angle end are appropriately set.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: Provided is an optical system, which retains enhanced optical performance at any object distance, and has compact and light-weight focus lens units. Provided is an optical system including a plurality of lens units, in which an interval between adjacent lens units changes during focusing, the optical system including: a positive lens unit arranged closest to an object side; first and second focus lens units having negative refractive powers configured to move during focusing; and an intermediate lens unit having a positive refractive power and arranged between the first and second focus lens units. The first and second focus lens units are configured to move toward an image side during focusing.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body that includes a plurality of control gate electrodes stacked above a substrate; a memory columnar body that extends in a first direction above the substrate and configures a memory string along with the stacked body; and a source contact that extends in the first direction and is electrically connected to one end of the memory string. Moreover, this source contact is adjacent to the stacked body via a spacer insulating layer. Furthermore, a spacer protective layer including a nitride or a metal oxide is provided between these source contact and spacer insulating layer.

Abstract: A vehicle bumper reinforcement structure to increase energy absorption capacity is provided. The vehicle bumper reinforcement structure comprises a base member extending in the width direction of the vehicle that is attached to the vehicle at both width ends, and a first reinforcement member and a second reinforcement member attached to the base member at a width center of the vehicle. Widths of the reinforcement members are differentiated in such a manner to cause fracture of the base member at width ends of the reinforcement members by a predetermined collision impact applied to the width center of the base member.

Abstract: A vehicle body impact absorption structure includes a bumper reinforcement, an upper vehicle body frame member, a lower vehicle body frame member, and an impact absorption box. The impact absorption box includes a rear portion, which is connected to the upper and lower vehicle body frame members, and a front portion, which is connected to the bumper reinforcement. The impact absorption box includes an upper impact absorption portion, which has a closed cross-section, a lower impact absorption portion, which has a closed cross-section, a front connection portion, which has a closed section, and a communication portion. The front connection portion connects the upper and lower impact absorption portions. The communication portion is located at the rear side of the front connection portion. The communication portion includes an opening extending through the impact absorption box in the lateral direction of the vehicle body.

Abstract: A vehicle bumper reinforcement structure to increase energy absorption capacity is provided. The vehicle bumper reinforcement structure comprises a base member extending in the width direction of the vehicle that is attached to the vehicle at both width ends, and a first reinforcement member and a second reinforcement member attached to the base member at a width center of the vehicle. Widths of the reinforcement members are differentiated in such a manner to cause fracture of the base member at width ends of the reinforcement members by a predetermined collision impact applied to the width center of the base member.

Abstract: Provided is a polychloroprene latex that shows favorable low-temperature stability without deterioration in the rubber agglutinating property during production of the dip-molded article, a rubber composition, and a dip-molded article, prepared by using the same. Prepared is a polychloroprene latex of a chloroprene copolymer obtained by polymerization of raw monomers at least containing chloroprene and 2,3-dichloro-1,3-butadiene, which is dispersed in water, wherein the 2,3-dichloro-1,3-butadiene content in the raw monomers is controlled to 1 to 30 mass % and the potassium ion content is adjusted to 0.7 to 1.5 parts by mass and the sodium ion content to 0.2 part or less by mass with respect to 100 parts by mass of the solid matter. In addition, a metal oxide: 1 to 10 parts by mass, sulfur: 0.1 to 3 parts by mass, an aging inhibitor: 0.1 to 5 parts by mass and a surfactant: 0.