Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

Abstract: The present invention relates to a process for preparing (Z)-7-tetradecen-2-one of the following formula (5), the process comprising the steps of converting a (Z)-1-halo-4-undecene compound (1) of the following general formula (1), wherein X1 represents a halogen atom, into a nucleophilic reagent, (Z)-4-undecenyl compound, of the following general formula (2), wherein M1 represents Li or MgZ1, and Z1 represents a halogen atom or a (4Z)-4-undecenyl group, subjecting the nucleophilic reagent, (Z)-4-undecenyl compound (2), to an addition reaction with propylene oxide of the following formula (3) to obtain (Z)-7-tetradecen-2-ol of the following formula (4) and oxidizing (Z)-7-tetradecen-2-ol (4) thus obtained to form (Z)-7-tetradecen-2-one (5).

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Ar1 represents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. R11 represents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Z? represents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.

Abstract: The present invention relates to a process for preparing an organohalogen compound of the following general formula (5), wherein R2 represents a linear, branched, or aromatic monovalent hydrocarbon group having 1 to 10 carbon atoms, n is the number of methylene groups of 1 to 10, and X2 represents a halogen atom, the process comprising: obtaining a reaction product mixture by subjecting a (?-halo-2-alkenyl)triphenylphosphonium halide compound of the following general formula (1), wherein n is as defined for the general formula (5) above, X1 and X2 represent, independently of each other, a halogen atom, and Ph represents a phenyl group, to a phosphorus ylide preparation reaction with an alkali metal alkoxide of the following general formula (3), wherein R1 represents a linear or branched alkyl group having 1 to 6 carbon atoms, and M represents an alkali metal atom, in the presence of a lithium halide of the following general formula (2), wherein X3 represents a halogen atom, and then subjecting the aforesaid r

Abstract: The present invention provides a process for preparing 2-methyl-N-(2?-methylbutyl)butanamide of the following formula (1): the process comprising: subjecting an ?-arylethyl-2-methylbutylamine compound of the following general formula (2): wherein Ar represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, to N-2-methylbutyrylation to form an N-?-arylethyl-2-methyl-N-(2?-methylbutyl)butanamide compound of the following general formula (3): wherein Ar is as defined above, and removing the ?-arylethyl group of the resulting compound (3) to form 2-methyl-N-(2?-methylbutyl)butanamide (1).

Abstract: The present invention provides a pattern forming method using an adhesion film forming composition comprising (A) a polymer compound, (B) a thermal acid generator, and (C) an organic solvent includes steps of: (I-1) applying the adhesion film forming composition onto a substrate to be processed and thereafter performing thermal treatment to form an adhesion film; (I-2) forming a resist upper layer film on the adhesion film using a resist upper layer film forming composition; (I-3) performing pattern exposure on the resist upper layer film and thereafter developing the resist upper layer film with a developer to form a circuit pattern on the resist upper layer film; and (I-4) transferring a pattern to the adhesion film and the substrate to be processed by dry etching with the resist upper layer film on which the circuit pattern is formed as a mask.

Abstract: The present invention provides a composition for forming an adhesive film that provides an adhesive film that yields good pattern profiles and has high adhesion to a resist upper layer film to prevent collapse of fine patterns in a fine patterning process during semiconductor apparatus manufacturing processes, as well as a patterning process using the composition and a method for forming an adhesive film using the composition. As such, provided is a composition for forming an adhesive film directly under a resist upper layer film. The composition includes: (A) a polymer containing a repeating unit shown by the following general formula (1) and a repeating unit shown by the following general formula (2); and (B) an organic solvent.

Abstract: The present invention provides a novel compound, (4Z,6E)-4,6-undecadienyl trimethylacetate (1). The present invention further provides a process for preparing (4Z,6E)-4,6-undecadienyl trimethylacetate (1), the process comprising subjecting a 4-halobutyl trimethylacetate compound (2) wherein X1 represents a halogen atom, to a phosphonium salt formation reaction with a phosphine compound of the following general formula (3) wherein Ar represents, independently of each other, an aryl group, to obtain a [4-(trimethylacetyloxy)butyl]triarylphosphonium halide compound (4) wherein Y represents a halogen atom, and Ar is as defined above, subjecting the [4-(trimethylacetyloxy)butyl]triarylphosphonium halide compound (4) to a deprotonation reaction in the presence of a base to obtain a reaction product mixture, and subjecting the reaction product mixture to a Wittig reaction with (2E)-2-heptenal (5) to obtain (4Z,6E)-4,6-undecadienyl trimethylacetate (1).

Abstract: There are provided a composition which has a larger attracted number than (9Z)-9,13-tetradecadien-11-ynal alone; and others. More specifically, there are provided a composition bioactive to Stenoma catenifer (STENCA), the composition including (9Z)-9,13-tetradecadien-11-ynal and (9E)-9,13-tetradecadien-11-ynal; a sustained release preparation for controlling STENCA, the preparation including the composition and a carrier or container for sustainedly releasing the (9Z)-9,13-tetradecadien-11-ynal and the (9E)-9,13-tetradecadien-11-ynal; and a method for controlling STENCA, the method including a step of installing the sustained release preparation in a field to release the (9Z)-9,13-tetradecadien-11-ynal and the (9E)-9,13-tetradecadien-11-ynal into the field.

Abstract: The present invention relates to a process for preparing a (1S,2R)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (S,R)-(2), wherein R1 represents a monovalent hydrocarbon group having 1 to 6 carbon atoms, and a bold wedged bond represents the absolute configuration, and a (1R,2S)-(2-acetoxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (R,S)-(3), wherein R1 is as defined above, a hashed wedged bond represents the absolute configuration, and Ac represents an acetyl group, the process comprising: subjecting a (1RS,2SR)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (RS,SR)-(2), wherein R1 is as defined above, and a hashed unwedged bond represents a relative configuration, to a kinetic resolution reaction with a lipase in the presence of vinyl acetate to obtain the (1S,2R)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound ((S,R)-(2)

Abstract: The present invention provides a process for preparing a (1,2-dimethyl-3-methylenecyclopentyl)acetate compound of the following general formula (3), wherein R represents a linear or branched alkyl group having 1 to 4 carbon atoms, the process comprising subjecting a haloacetaldehyde alkyl 2,3-dimethyl-2-cyclopentenyl acetal compound of the following general formula (1), wherein R is as defined above, and Y represents a halogen atom, to a dehydrohalogenation reaction in the presence of a base, followed by a rearrangement reaction to obtain a (1,2-dimethyl-2-cyclopentenyl)acetate compound of the following general formula (2), wherein R is as defined above, and subjecting the (1,2-dimethyl-2-cyclopentenyl)acetate compound (2) to an epoxidation reaction, followed by an isomerization reaction and then a methylenation reaction to obtain the (1,2-dimethyl-3-methylenecyclopentyl)acetate compound of the following general formula (3).

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.

Abstract: The present invention provides a process for preparing 2-methyl-N-(2?-methylbutyl)butanamide of the following formula (1): the process comprising: subjecting an ?-arylethyl-2-methylbutylamine compound of the following general formula (2): wherein Ar represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, to N-2-methylbutyrylation to form an N-?-arylethyl-2-methyl-N-(2?-methylbutyl)butanamide compound of the following general formula (3): wherein Ar is as defined above, and removing the ?-arylethyl group of the resulting compound (3) to form 2-methyl-N-(2?-methylbutyl)butanamide (1).

Abstract: The present invention relates to a process for preparing a 3,7-dimethylalkane compound (3): wherein n is 5 or 6, the process comprising: subjecting a nucleophilic reagent, 2,6-dimethyloctyl compound (1): wherein M1 represents Li, Mg Z1, CuZ1, or CuLiZ1, wherein Z1 represents a halogen atom or a 2,6-dimethyloctyl group, to a coupling reaction with an electrophilic alkyl reagent (2): wherein X1 represents a halogen atom or a p-toluenesulfonate group, and “n” is as defined above, to form the 3,7-dimethylalkane compound (3).

Abstract: A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.

Abstract: The present invention relates to an acetal compound of the following general formula (1) and an acetal compound of the following general formula (2). The present invention relates to processes for preparing the acetal compound (2), comprising subjecting the acetal compound (1) to a hydrogenation reaction to form the acetal compound (2). The present invention provides a process for preparing 2,3,4,4-tetramethylcyclopentanecarbaldehyde of the following formula (3), comprising subjecting the acetal compound (2) to a hydrolysis reaction to form 2,3,4,4-tetramethylcyclopentanecarbaldehyde (3).

Abstract: The present invention relates to a process for preparing a 3,7-dimethylalkane compound (3): wherein n is 5 or 6, the process comprising: subjecting a nucleophilic reagent, 2,6-dimethyloctyl compound (1): wherein M1 represents Li, Mg Z1, CuZ1, or CuLiZ1, wherein Z1 represents a halogen atom or a 2,6-dimethyloctyl group, to a coupling reaction with an electrophilic alkyl reagent (2): wherein X1 represents a halogen atom or a p-toluenesulfonate group, and “n” is as defined above, to form the 3,7-dimethylalkane compound (3).

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W1; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.

Abstract: The present invention provides a process for preparing 2-methyl-N-(2?-methylbutyl) butanamide of the following formula (1):the process comprising: subjecting an ?-arylethyl-2-methylbutylamine compound of the following general formula (2): wherein Ar represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, to N-2-methylbutyrylation to form an N-?-arylethyl-2-methyl-N-(2?-methylbutyl)butanamide compound of the following general formula (3): wherein Ar is as defined above, and removing the ?-arylethyl group of the resulting compound (3) to form 2-methyl-N-(2? -methylbutyl)butanamide (1).

Abstract: The present invention relates to an acetal compound of the following general formula (1) and an acetal compound of the following general formula (2). The present invention relates to processes for preparing the acetal compound (2), comprising subjecting the acetal compound (1) to a hydrogenation reaction to form the acetal compound (2). The present invention provides a process for preparing 2,3,4,4-tetramethylcyclopentanecarbaldehyde of the following formula (3), comprising subjecting the acetal compound (2) to a hydrolysis reaction to form 2,3,4,4-tetramethylcyclopentanecarbaldehyde (3).