Patents by Inventor Takeru Watanabe

Takeru Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11022882
    Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: June 1, 2021
    Assignees: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Seiichiro Tachibana, Takeru Watanabe, Keisuke Niida, Hiroko Nagai, Takashi Sawamura, Tsutomu Ogihara, Alexander Edward Hess, Gregory Breyta, Daniel Paul Sanders, Rudy J. Wojtecki
  • Publication number: 20210143255
    Abstract: Provided is a semiconductor device whose performance is improved. A p type body region is formed in an n type semiconductor layer containing silicon carbide, and a gate electrode is formed on the body region with a gate insulating film interposed therebetween. An n type source region is formed in the body region on a side surface side of the gate electrode, and the body region and a source region are electrically connected to a source electrode. A p type field relaxation layer FRL is formed in the semiconductor layer on the side surface side of the gate electrode, and the source electrode is electrically connected to the field relaxation layer FRL. The field relaxation layer FRL constitutes a part of the JFET 2Q which is a rectifying element, and a depth of the field relaxation layer FRL is shallower than a depth of the body region.
    Type: Application
    Filed: October 27, 2020
    Publication date: May 13, 2021
    Applicant: HITACHI, LTD.
    Inventors: Takeru SUTO, Naoki TEGA, Naoki WATANABE, Hiroshi MIKI
  • Patent number: 10998197
    Abstract: The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: May 4, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke Kori, Tsutomu Ogihara, Takeru Watanabe, Keisuke Niida, Takashi Sawamura
  • Patent number: 10975042
    Abstract: The present invention is a method for purifying an NCA, including the steps of: a) dissolving an NCA contaminated with impurities into a solvent which is a good solvent and is not a chlorinated solvent followed by stirring to precipitate an undissolved impurity to afford a suspension, b) adding an acidic filter aid having ability to trap a basic impurity to the obtained suspension followed by filtration and/or forming a fixed bed of the acidic filter aid having ability to trap a basic impurity followed by filtering the suspension to bring the suspension to be in contact with the acidic filter aid having ability to trap a basic impurity, and c) adding the obtained filtrate dropwise to a poor solvent for NCA to crystallize out the NCA in which the impurities are removed. This makes it possible to purify a low-purity NCA conveniently to afford a high-purity NCA.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: April 13, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yuki Suka, Yuji Harada, Shiori Nonaka, Kazuomi Sato, Takeru Watanabe, Takehiko Ishii
  • Publication number: 20210088908
    Abstract: A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Ar1 represents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. R11 represents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Z? represents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.
    Type: Application
    Filed: August 24, 2020
    Publication date: March 25, 2021
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yusuke KAI, Takeru WATANABE, Yusuke BIYAJIMA, Tsutomu OGIHARA
  • Publication number: 20210003920
    Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W1; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.
    Type: Application
    Filed: July 6, 2020
    Publication date: January 7, 2021
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Takashi SAWAMURA, Keisuke NIIDA, Seiichiro TACHIBANA, Takeru WATANABE, Tsutomu OGIHARA
  • Publication number: 20200381247
    Abstract: A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.
    Type: Application
    Filed: May 27, 2020
    Publication date: December 3, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Takashi SAWAMURA, Keisuke NIIDA, Seiichiro TACHIBANA, Takeru WATANABE, Tsutomu OGIHARA
  • Publication number: 20200332062
    Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.
    Type: Application
    Filed: April 16, 2020
    Publication date: October 22, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Keisuke NIIDA, Takashi SAWAMURA, Takeru WATANABE, Seiichiro TACHIBANA, Tsutomu OGIHARA
  • Publication number: 20200333709
    Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound.
    Type: Application
    Filed: April 16, 2020
    Publication date: October 22, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Keisuke NIIDA, Takashi SAWAMURA, Seiichiro TACHIBANA, Takeru WATANABE, Tsutomu OGIHARA
  • Publication number: 20200283400
    Abstract: An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 10, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayoshi Sagehashi, Ryosuke Taniguchi, Takeru Watanabe, Yoshinori Matsui
  • Publication number: 20200115400
    Abstract: The present invention provides a method for producing a silicon compound shown by the following general formula (3) through a hydrosilylation reaction between a hydrosilane compound shown by the following general formula (1) and a carbonyl group-containing alicyclic olefin compound shown by the following general formula (2), in which the hydrosilylation reaction takes place while an acidic compound or acidic compound precursor is gradually added in presence of a platinum-based catalyst. This provides a highly-efficient industrial method for producing an industrially useful, hydrolysable silicon compound having an alicyclic structure (particularly a norbornane ring) and a carbonyl group.
    Type: Application
    Filed: September 25, 2019
    Publication date: April 16, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryo MITSUI, Takeru WATANABE, Seiichiro TACHIBANA, Tsutomu OGIHARA
  • Patent number: 10620537
    Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, WX)n??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: April 14, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeru Watanabe, Rie Kikuchi, Daisuke Kori, Yusuke Biyajima, Tsutomu Ogihara
  • Patent number: 10604618
    Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: March 31, 2020
    Assignees: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Seiichiro Tachibana, Takeru Watanabe, Keisuke Niida, Hiroko Nagai, Takashi Sawamura, Tsutomu Ogihara, Alexander Edward Hess, Gregory Breyta, Daniel Paul Sanders, Rudy J. Wojtecki
  • Patent number: 10550136
    Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: February 4, 2020
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yuki Suka, Yuji Harada, Takeru Watanabe, Shiori Nonaka
  • Publication number: 20190390000
    Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.
    Type: Application
    Filed: June 20, 2018
    Publication date: December 26, 2019
    Applicants: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Keisuke NIIDA, Hiroko NAGAI, Takashi SAWAMURA, Tsutomu OGIHARA, Alexander Edward HESS, Gregory BREYTA, Daniel Paul SANDERS, Rudy J. WOJTECKI
  • Publication number: 20190391493
    Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.
    Type: Application
    Filed: June 20, 2018
    Publication date: December 26, 2019
    Applicants: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Keisuke NIIDA, Hiroko NAGAI, Takashi SAWAMURA, Tsutomu OGIHARA, Alexander Edward HESS, Gregory BREYTA, Daniel Paul SANDERS, Rudy J. WOJTECKI
  • Publication number: 20190359579
    Abstract: The present invention is a method for purifying an NCA, including the steps of: a) dissolving an NCA contaminated with impurities into a solvent which is a good solvent and is not a chlorinated solvent followed by stirring to precipitate an undissolved impurity to afford a suspension, b) adding an acidic filter aid having ability to trap a basic impurity to the obtained suspension followed by filtration and/or forming a fixed bed of the acidic filter aid having ability to trap a basic impurity followed by filtering the suspension to bring the suspension to be in contact with the acidic filter aid having ability to trap a basic impurity, and c) adding the obtained filtrate dropwise to a poor solvent for NCA to crystallize out the NCA in which the impurities are removed. This makes it possible to purify a low-purity NCA conveniently to afford a high-purity NCA.
    Type: Application
    Filed: May 21, 2019
    Publication date: November 28, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yuki SUKA, Yuji HARADA, Shiori NONAKA, Kazuomi SATO, Takeru WATANABE, Takehiko ISHII
  • Patent number: 10472377
    Abstract: A method for producing a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end, a polymerization initiator for use in the method, and a precursor of the polymerization initiator are provided.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: November 12, 2019
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yuki Suka, Yuji Harada, Takeru Watanabe, Shiori Nonaka
  • Publication number: 20190322688
    Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.
    Type: Application
    Filed: June 27, 2019
    Publication date: October 24, 2019
    Inventors: Yuki Suka, Yuji Harada, Takeru Watanabe, Shiori Nonaka
  • Publication number: 20190315777
    Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.
    Type: Application
    Filed: June 27, 2019
    Publication date: October 17, 2019
    Inventors: Yuki Suka, Yuji Harada, Takeru Watanabe, Shiori Nonaka