Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.

Abstract: A method for producing a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end, a polymerization initiator for use in the method, and a precursor of the polymerization initiator are provided.

Abstract: A method for producing a narrow molecular weight distribution polyalkylene glycol derivative having an amino group at an end is provided and allows for polymerization of ethylene oxide under mild conditions with suppressed occurrence of diol polymer impurities includes at least the steps of polymerizing ethylene oxide by using a compound represented by the following general formula (2) and converting a polymer end to R3: wherein R1 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 represents a linear or branched divalent hydrocarbon group having 1 to 5 carbon atoms; R3 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms; M represents sodium or potassium; m represents an integer of 1 to 5; n represents an integer of 1 to 450; and k represents an integer of 1 to 5.

Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (i) or (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), wherein R1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L8? represents the partial structure represented by the following formula (i), 0?o<1, 0<p?1 and o+p=1, wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L0 represents a divalent organic group.

Abstract: A quaternary ammonium salt compound is represented by the following formula (A-1), wherein, R1, R2, and R3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A? represents a non-nucleophilic counter ion.

Abstract: A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.

Abstract: A method for producing a narrow molecular weight distribution polyalkylene glycol derivative having an amino group at an end under mild conditions. A method for producing a compound of the general formula (1): CH3O(CH2CH2O)nCH2CH2CH2NH2 (wherein n is an integer of 1 to 450) comprises the following steps of: 1) a step of producing a compound of the general formula (3): CH3O(CH2CH2O)k-1CH2CH2O?M+ from a compound of the general formula (2): CH3O(CH2CH2O)kH (wherein k is an integer of 2 to 5); 2) a step of producing a compound of the general formula (4): CH3O(CH2CH2O)n-1CH2CH2O?M+ from a compound of the general formula (3); 3) a step of reacting a compound of the general formula (4) with acrylonitrile to obtain a compound of the general formula (5): CH3O(CH2CH2O)nCH2CH2CN; and 4) a step of reducing a compound of the general formula (5) to obtain a compound of the general formula (1).

Abstract: A chemically amplified negative resist composition is provided comprising (A) a resin having a crosslinking group, (B) a crosslinker, (C) a photoacid generator capable of generating an acid upon exposure to light of wavelength 190-500 nm, (D) a solvent, and (E) a fluoroalkyl-containing amine compound. The resist composition can form a fine pattern, specifically a fine hole or space pattern which has a positive taper (or forward taper) profile in which the size of top is greater than the size of bottom or improves the overhang profile with extremely projected top.

Abstract: A method for producing a narrow molecular weight distribution polyalkylene glycol derivative having an amino group at an end is provided and allows for polymerization of ethylene oxide under mild conditions with suppressed occurrence of diol polymer impurities includes at least the steps of polymerizing ethylene oxide by using a compound represented by the following general formula (2) and converting a polymer end to R3: wherein R1 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 represents a linear or branched divalent hydrocarbon group having 1 to 5 carbon atoms; R3 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms; M represents sodium or potassium; m represents an integer of 1 to 5; n represents an integer of 1 to 450; and k represents an integer of 1 to 5.

Abstract: A method for producing a narrow molecular weight distribution polyalkylene glycol derivative having an amino group at an end under mild conditions. A method for producing a compound of the general formula (1): CH3O(CH2CH2O)nCH2CH2CH2NH2 (wherein n is an integer of 1 to 450) comprises the following steps of: 1) a step of producing a compound of the general formula (3): CH3O(CH2CH2O)k-1CH2CH2O?M+ from a compound of the general formula (2): CH3O(CH2CH2O)kH (wherein k is an integer of 2 to 5); 2) a step of producing a compound of the general formula (4): CH3O(CH2CH2O)n-1CH2CH2O?M+ from a compound of the general formula (3); 3) a step of reacting a compound of the general formula (4) with acrylonitrile to obtain a compound of the general formula (5): CH3O(CH2CH2O)nCH2CH2CN; and 4) a step of reducing a compound of the general formula (5) to obtain a compound of the general formula (1).

Abstract: The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.

Abstract: A naphthalene derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.

Abstract: There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: forming, on a substrate, a monomolecular film including hydroxyl groups, cyano groups, or oxiranyl groups, which are oriented toward an outmost surface of the monomolecular film; and chemically modifying the hydroxyl groups, cyano groups, or oxiranyl groups of the monomolecular film to transform them into carboxyl groups, to thereby form, on the substrate, the monomolecular film including the carboxyl groups, which are oriented toward an outmost surface of the monomolecular film. There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.

Abstract: A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.

Abstract: A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C1-C20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.

Abstract: A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a ?-alanine, ?-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.

Abstract: A naphthalene derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.