Abstract: The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.

Abstract: The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.

Abstract: The invention relates to a substrate that includes a multi-layer structure on the surface of a donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.

Abstract: The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.

Abstract: The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.

Abstract: A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.

Abstract: A method for manufacturing a multilayer semiconductor structure that includes an irregular layer. In an embodiment, the method includes providing a layer of irregular material on a donor substrate. The irregular layer has a flat face at an interface with the donor substrate, and has an opposite, irregular face. Next; a weakened zone is created at a predetermined depth within the donor substrate. An intermediate layer of material is then provided that covers the irregular face of the irregular layer, the intermediate layer providing a substantially flat surface. The substantially flat surface of the intermediate layer is then bonded to a receiver substrate, and the donor substrate is detached along the weakened zone to form the multilayer semiconductor structure. The multilayer structure includes an useful layer, the irregular layer, the intermediate layer and the receiver substrate, wherein all of the irregular material of the irregular layer is present in the structure.

Abstract: A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.

Abstract: The present invention relates to a compliant substrate having a top surface for receiving a heteroepitaxial structure or heteroepitaxial layer. This substrate comprises a carrier substrate, a top single-crystalline layer, a buried layer located between the carrier substrate and the top layer, and a weakened region located in the top layer or between the top layer and the buried layer such that the compliant substrate facilitates relaxed growth of a heteroepitaxial layer or structure upon the top surface. The invention also relates to the combination of the compliant substrate and a heteroepitaxial layer provided thereon, as well as to a method of making the compliant substrate and combination.

Abstract: A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method comprises employing mechanical means to remove part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, as well as donor wafers which can be recycled in accordance with the invention.

Abstract: A process for forming a useful layer (6) from a wafer (10), the wafer (10) comprising a supporting substrate (1) and a strained layer (2) that are chosen respectively from crystalline materials. The process includes a first step of forming a region of perturbation (3) in the supporting substrate (1) at a defined depth by creating structural perturbations that cause at least relative relaxation of the elastic strains in the strained layer (2). A second step of supplying energy causes at least relative relaxation of the elastic strains in the strained layer (2). A portion of the wafer (10) is removed from the opposite side from the relaxed strained layer (2′), the useful layer (6) being the remaining portion of the wafer (10). The present invention also relates to an application of the process and to wafers produced during the process.