Abstract: A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.

Abstract: An image pickup device wherein the range in the amount of incident light (dynamic range) for obtaining an appropriate image can be expanded, and shutter and aperture functions are provided. A light shielding element for light shielding a photoelectric conversion section and an actuator for driving the light shielding element are provided on the pixel of the image pickup device using the MEMS technology, and the amount of light shielding is controlled for each pixel, whereby the dynamic range is expanded, and shutter and aperture functions are also provided.

Abstract: Methods and related systems are described for measuring and analyzing refracted acoustic energy. A plurality of receivers mounted are on a downhole tool, and are arranged and adapted to receive refracted acoustic energy from a downhole formation. Measurements of refracted acoustic energy is analyzed such that information relating to an azimuthal direction relative to the downhole tool of an interface within the downhole formation can be estimated. The receivers can be mounted on a drill collar as part of a LWD tool and steering of the drilling trajectory can be based in part on the estimated formation information.

Abstract: In a laser exposure device according to the present invention, a positioning pin, which is formed in a lens holder supporting a lens system, is inserted through an elongated hole for restriction of a board holder supporting a laser diode. An eccentric cam is inserted into an elongated hole for rotation movement formed in a board holder and a circular hole for rotation movement which is formed in the lens holder and which faces the elongated hole for rotation movement. An eccentric cam is inserted into an elongated hole for slide movement formed in the board holder and a circular hole for slide movement which is formed in the lens holder and which faces the elongated hole for slide movement. The eccentric cams are rotated to relatively move the board holder and lens holder with respect to each other to thereby establish alignment between the optical axes of the laser diode and lens system.

Abstract: A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

Abstract: A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type semiconductor film so that the first metallic film contacts the P type semiconductor film with an ohmic contact; forming a mask having an opening on the first metallic film; etching a part of the first metallic film and a part of the P type semiconductor film via the opening so that a part of the N type semiconductor layer is exposed; and forming a second metallic film on the part of the N type semiconductor layer so that the second metallic film contacts the N type semiconductor layer with a Schottky contact.

Abstract: A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.

Abstract: In a laser exposure device according to the present invention, a positioning pin, which is formed in a lens holder supporting a lens system, is inserted through an elongated hole for restriction of a board holder supporting a laser diode. An eccentric cam is inserted into an elongated hole for rotation movement formed in a board holder and a circular hole for rotation movement which is formed in the lens holder and which faces the elongated hole for rotation movement. An eccentric cam is inserted into an elongated hole for slide movement formed in the board holder and a circular hole for slide movement which is formed in the lens holder and which faces the elongated hole for slide movement. The eccentric cams are rotated to relatively move the board holder and lens holder with respect to each other to thereby establish alignment between the optical axes of the laser diode and lens system.

Abstract: A heterocyclic compound of the formula (I): wherein B1 is —C(R2)? or —N?; R1? is H, etc.; one of R1 and R2 is -Z1-Z2-Z3-R5 wherein Z1 and Z3 are independently single bond, optionally substituted alkylene, etc.; Z2 is single bond, optionally substituted alkylene, etc.; R5 is optionally substituted aryl, optionally substituted heteroaryl, etc., and the other of R1 and R2 is H; -A1- is —C(—Y)?C(—RA)—C(—R3)?C(—R4)—, etc. wherein Y is OH, etc.; RA is —COR7 wherein R7 is OH, etc.; one of R3 and R4 is carboxy, etc., and the other of R1 and R2 is H, etc, a prodrug thereof, a pharmaceutically acceptable salt thereof, and a solvate thereof, having an antiviral activity, more particularly, an inhibitory activity against HIV integrase, and a pharmaceutical composition containing the same, especially an anti-HIV drug.

Abstract: An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n?-type drift layer to extend into the n?-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.

Abstract: There is disclosed an organ-adhesion preventing agent comprising a chemically-crosslinked ?-polyglutamic acid as an effective ingredient, as well as a process for preventing organ from adhesion comprising a step of bringing the adhesion-preventing agent into contact with or depositing the same onto the surface of a local organ and optionally the neighborhood thereof to be prevented from the post-operative adhesion. According to the present invention, there is provided an adhesion-preventing agent which is capable of effectively preventing the surfaces of organs from adhesion, and which can be absorbed in the body with high safety and be produced with ease and has high practical usefulness, as well as a process for preventing organ from adhesion by using the adhesion-preventing agent.

Abstract: A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.

Abstract: The present invention relates to compositions comprising an epoxy resin; a reagent selected from the group of cationic compounds or compounds which are capable to form cationic compounds or mixtures of those; at least one compound with two aromatic rings and at least one central cyclic oxygen bridged ring and the use of such compositions in adhesives, sealants and coatings.

Abstract: In a telephone conference system including IP telephone terminals for transmitting and receiving packeted and encoded voice information that are connected to each other through an IP network; a storage server for being connected through the IP network and storing the encoded voice information is equipped, a marker assigning unit for generating marker information assigned to the encoded voice information at arbitrary timing is included in the IP telephone terminal; network address information, time information, and the marker information are associated with the encoded voice information to store them in the storage server when the marker information is generated. In addition, an agenda selecting unit is included in the IP telephone terminal, and only the encoded voice information assigned with the marker information corresponding to an agenda selected by the agenda selecting unit is used from the encoded voice information stored in the storage server to reproduce voice.

Abstract: A volume-phase reflection hologram optical element is fabricated by exposing a hologram photosensitive material to two coherent light beams. One exposure light beam has an axis-asymmetric wavefront, and the other exposure light beam has focus points different in the optical axis direction (Z-direction) between on a plane (ZX-plane) including one of two directions (X- and Y-directions) mutually perpendicular on a sectional plane perpendicular to that light beam and on a plane (YZ-plane) including the other of those two directions. Thus, an image display apparatus is realized in which at the time of reproduction, the component of a predetermined wavelength of the image light diffraction-reflected by the hologram optical element is focused at positions different in the optical axis direction between on the ZX-plane and on the YZ-plane, offering different image viewing characteristics between in the X- and Y-directions.

Abstract: The exposure amounts of R, G, and B laser light emitted from a fabrication light source are so adjusted that the diffraction efficiency at R, G, and B wavelengths in an optical element is commensurate with the light intensity at the R, G, and B wavelengths in the light emitted from a reproduction light source. For example, when the light intensity of the light emitted from the reproduction light source is increasingly low at the B, G, and R wavelengths in this order, the exposure amounts of the R, G, B, laser light emitted from the fabrication light source are so adjusted that the diffraction efficiency in the optical element is increasingly high at the B, G, and R wavelengths in this order. In this way, the hue of the light (reproduction light) obtained from the reproduction light source via the optical element can be adjusted to the hue desired with every reproduction light source used, while the most use is made of the light emitted from the reproduction light source actually used.

Abstract: A mark position detection apparatus has an illumination optical system for illuminating a measurement mark with illumination light and an imaging optical system for converging light reflected from the measurement mark to form an image of the measurement mark on an image pickup apparatus. The mark position detection apparatus measures a positional displacement of the measurement mark by processing an image signal obtained by the image pickup apparatus. The mark position detection apparatus has an optical element provided in the illumination optical system for compensating a difference in asymmetry of the image signal that depends on the wavelength of the illumination light.

Abstract: A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020 cm?3.

Abstract: The invention relates to a working vehicle which can improve a workability of a maintenance, inspection and the like with respect to a portion around an engine, and can tilt up a rear hood together with a tilt-up floor. An upper side of an engine (not shown) can be covered in a rear end portion side of a floor (35). A hinge mechanism (38) is arranged between a front end portion of the floor (35) and a rev-frame (25), and the floor (35) can be tilted up via the hinge mechanism (38). A rear hood (32) is coupled by hinge to a first support column (15) of a mounting bracket (4) supporting the floor (35), and is structured so as to be freely opened and closed. It is possible to tilt up the floor (35) in a state of attaching the rear hood (32), by canceling a fixed state of the mounting bracket (4) to a supporting and fixing member such as a counter weight (2) or the like.

Abstract: The present invention relates to 1,3-oxathiolane-2-thione compounds of the general formula (I): wherein R1 and R2 are the same or different, each of which denotes a straight-chain or branched alkoxy residue with 1 to 6 carbon atoms or an aryloxy or aralkyloxy residue, R3 is different or the same as R1 or R2 or an aliphatic residue, an amino residue, a halogen residue, an aromatic or heteroaromatic residue, or an araliphatic or heteroaraliphatic residue, R4 is a bridging group selected from the groups consisting of aliphatic, heteroaliphatic, araliphatic, heteroaraliphatic, aromatic and heteroaromatic groups and R5 is hydrogen, an aliphatic, heteroaliphatic, araliphatic, heteroaraliphatic, aromatic, heteroaromatic, cycloaliphatic or heterocycloaliphatic group or R4 and R5 form a cycloaliphatic, cycloheteroaliphatic, aromatic or heteroaromatic residue, which is optionally substituted with an aliphatic, heteroaliphatic residue serving as a bridging group to the silicon atom and X and Y are different and sele