Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer.

Abstract: A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

Abstract: A compound which inhibits both of EGF receptor tyrosine kinase and HER2 tyrosine kinase is provided. A compound represented by the general formula (I): wherein RX is a group represented by the formula: wherein R1 is a hydrogen atom, optionally substituted alkyl, etc.; Z is —O—, —N(R10)—, etc.; R10 is a hydrogen atom, alkyl, etc.; R2 is a hydrogen atom, optionally substituted alkyl, etc.; R18 is a hydrogen atom, optionally substituted alkyl, etc.; R19 is optionally substituted alkyl, etc.; W1 is an optionally substituted non-aromatic nitrogen-containing group; R17 is a hydrogen atom, optionally substituted alkyl, etc.; R3 and R4 are independently a hydrogen atom, optionally substituted alkyl, etc.; X is —O—, —S—, or —N(R12)—, etc.; R12 is a hydrogen atom, alkyl, etc.; and A is phenyl optionally having a substituent, etc., its pharmaceutically acceptable salt, or a solvate thereof.

Abstract: The present invention relates to a curable composition, comprising specific meta-substituted aromatic compounds and at least one benzoxazine compound. In particular, the invention relates to the use of said meta-substituted aromatic compounds as curatives/catalysts for benzoxazine-containing compositions.

Abstract: A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.

Abstract: The present invention relates to a curable composition, comprising at least one benzoxazine compound, and at least one sulfonic acid ester having a cyclic structure. In particular, the invention relates to the use of at least one sulfonic acid having a cyclic structure as a heat-activatable catalyst for curable composition, comprising at least one benzoxazine compound.

Abstract: The present invention relates to a catalyst, which is an organic component with electron withdrawing substituents and to compositions with such catalyst and at least one benzoxazine component, and the use of such compositions in adhesives, sealants and coatings.

Abstract: A latent curing agent obtained by the reaction of a coumarin compound with an amine.

Abstract: In order to provide an alcohol test device which can keep evidence that an identical person has been surely tested in an alcohol test, the alcohol test device includes an alcohol test unit which measures alcohol concentration from breath exhaled by a subject; a drinking determination unit which determines whether or not the subject is in a drunken state on the basis of a measurement result of the alcohol test unit; a camera unit which photographs a face image of the subject when the breath is exhaled into the alcohol test unit; a face authentication identical person determination unit which compares a face image photographed by the camera unit with a face image of the subject himself (herself) preliminarily photographed, and performs identical person authentication which determines whether or not the subject is the identical person; a result control unit which edits combining a result of identical person authentication by the face authentication identical person determination unit and a result of drinking det

Abstract: An information processing apparatus includes: an information processing main unit; a display unit electrically connected to the information processing main unit; and a jack having a cylindrical sleeve provided at a housing of the information processing main unit and located coaxially with an insertion hole through which an external terminal is inserted, the jack having a cylindrical hole for accommodating the external terminal, wherein the sleeve of the jack is accommodated inside the housing of the information processing main unit; and an end face of the sleeve facing toward the housing is covered by the housing in the axial direction of the sleeve.

Abstract: [PROBLEMS] To provide a shape measuring apparatus having a configuration which enables the operation for aligning a measuring probe and a candidate object to be simplified when the shape of the candidate object is measured. [MEANS TO SOLVE THE PROBLEMS] A shape measuring apparatus is configured so that an optical probe 20 moves relative to a candidate object, and the three-dimensional shape of the candidate object is measured without contact from information obtained by the optical probe 20. The shape measuring apparatus includes a gantry structure 10 allowing the optical probe 20 to be moved to a predetermined position relative to the candidate object, and a support device 30 allowing the candidate object to be rotated around at least two rotational axes.

Abstract: Disclosed herein is an information processor, including: a detecting portion detecting connection between a battery pack and an information processor main body, and outputting connection information to the battery pack; a power source circuit to which an electric power is supplied from the battery pack acquiring the connection information; a manipulation portion adapted to be manipulated by a user; and a stopping portion outputting un-connection information to the battery pack when the manipulation portion is manipulated, and stopping output of the connection information even when the connection is detected by the detecting portion.

Abstract: Methods and apparatus to filter acoustic waveforms in downhole environments are described. An example method involves receiving acoustic waveform data representing acoustic signals traversing at least a portion of a borehole adjacent a subterranean formation and performing a direct transform operation on the acoustic waveform data to generate wavelet map data. The wavelet map data comprises a time-frequency representation of the acoustic waveform data.

Abstract: A compound which inhibits both of EGF receptor tyrosine kinase and HER2 tyrosine kinase is provided. A compound represented by the general formula (I): wherein RX is a group represented by the formula: wherein R1 is a hydrogen atom, optionally substituted alkyl, etc.; Z is —O—, —N(R10)—, etc.; R10 is a hydrogen atom, alkyl, etc.; R2 is a hydrogen atom, optionally substituted alkyl, etc.; R18 is a hydrogen atom, optionally substituted alkyl, etc.; R19 is optionally substituted alkyl, etc.; W1 is an optionally substituted non-aromatic nitrogen-containing group; R17 is a hydrogen atom, optionally substituted alkyl, etc.; R3 and R4 are independently a hydrogen atom, optionally substituted alkyl, etc.; X is —O—, —S—, or —N(R12)—, etc.; R12 is a hydrogen atom, alkyl, etc.; and A is phenyl optionally having a substituent, etc., its pharmaceutically acceptable salt, or a solvate thereof.

Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

Abstract: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.

Abstract: Polymerizable combinations, comprising at least one first component selected from the group of benzoxazine monomers and at least one second component selected from the group of aromatic esters are described. Further on the use of aromatic esters as additives to benzoxazine monomers as well as methods of coating a device by heating the above mentioned combination, and a device, coated by that way is explained.

Abstract: A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation film; a source electrode on the source region; and a drain electrode on a second side of the substrate. The source region has multi-layered structure including a first layer and a second layer. The first layer as an upper layer contacts the source electrode with ohmic contact. The second layer as a lower layer has an impurity concentration, which is lower than an impurity concentration of the first layer.

Abstract: A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the current path, respectively; and a gate on the channel region through the gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 4.7×1020 cm?3. The interface provides a channel surface having a (000-1)-orientation surface.