Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

Abstract: The present invention is to facilitate the attachment and maintenance work of left and right sheet guides of a shutter and to facilitate the return of the disengaged sheet. A sheet guide of a sheet shutter according to the present invention is a mechanism configured such that a sheet 2 is lifted and lowered by being wound and unwound around a sheet drum 5 supported between left and right support posts 3 and 3 according to the rotation of the sheet drum 5, and such that both the left and right ends of the sheet 2 are lifted and lowered by being guided by sheet guide sections 11 and 11 respectively installed in the support posts 3 and 3.

Abstract: To provide a sheet shutter in which an urging member for urging an unwound, sheet toward the left and right outer side is provided so that the sheet is made to smoothly slide in the left and right direction and the wear of the urging member is suppressed. The sheet shutter according to the present invention is configured such that a rail groove is provided in each of left and right support posts, such that an inner rail is accommodated and supported in the rail grooves, such that engagement guides for guiding the lifting and lowering of the sheet formed in the inner rails, and such that, when the urging member is provided in the rail groove, an elastic sheet section for partitioning the inside of the rail groove into front and rear portions is provided at the urging member.

Abstract: A conductive thin film including graphene and having improved conductivity is disclosed. The conductive thin film is composed of a superlattice structure that includes a first and second graphene films formed of respective sheets of carbon atoms that each have at least one atomic layer; and an intercalation film sandwiched between the first and second graphene films. The superlattice structure may have a plurality of stacking units that are stacked and that are each formed of one graphene film and one intercalation film; and the first and second graphene films may have graphene films belonging to two mutually adjacent stacking units from among the plurality of stacking units. The conductive thin film may be transparent and, when the superlattice structure has a plurality of stacking units, a sum total of atomic layers of the sheets of carbon atoms for all the stacking units is ten or fewer.

Abstract: A product comprising a patterned optically anisotropic layer having two or more regions of different birefringence in the form of a pattern, comprising at least an intensity gradation-type pixel of approximately uniform birefringence and an area gradation-type pixel comprising two or more of drawing units of different birefringence, and each region of a single birefringence in the patterned optically anisotropic layer comprising a plurality of the drawing units is provided. The product permits the formation of full-color images (latent images) and includes delicate color representation, such as the densities of particular colors.

Abstract: In an engine such as an engine for driving a pump or dynamo, in which a load increasing state does not appear as an accelerating state of rotation speed, it is intended to prevent the smoke emission in an abruptly load-increasing state, which might otherwise be caused by the suppression or interruption of an EGR quantity. The engine 10 comprises a supercharger 11 and an exhaust gas recirculation (EGR) device 12. The engine 10 makes an isochronous control or a droop control, when its rotation speed N is shifted from a no-load (idle) or light-load run to a high-load (load-increasing) state. In case it is detected, when the state of the engine 10 shifts to a load state, that the actual rotation speed N becomes lower by a predetermined rotation speed ?N than a target rotation speed Nm, an EGR valve 13 of the exhaust gas recirculation (EGR) device 12 is either throttled to an opening smaller by a predetermined opening ?F than the ordinary set opening F corresponding to the load state or fully closed.

Abstract: An object of the present invention is to provide a method for forming a coating film that is capable of forming a coating film having excellent smoothness, distinctness of image and luster using an aqueous coating composition. The present invention provides a method for forming a coating film comprising: Step (1): forming an uncured coating film by applying to a substrate an aqueous coating composition that contains a copolymer of monomer components comprising one or more N-substituted (meth)acrylamide compounds, the copolymer being a graft copolymer comprising (A) a main chain having a lower critical solution temperature T1 in water within the range of 30 to 95° C., and (B) at least one hydrophobic side chain; Step (2): preheating the uncured coating film formed in Step (1) under heating conditions such that a preheating temperature T2 falls within the range of 60 to 100° C.

Abstract: A synthesizer including an oscillator for outputting an oscillation signal based on an output signal from a comparator, a frequency divider for dividing a frequency of an output signal from the oscillator based on control from a controller, and a temperature sensor for detecting an error between a preset frequency and a frequency based on a reference oscillation signal. The comparator compares an output signal from the frequency divider with an output signal from a MEMS oscillator and outputs a signal indicating the comparison result to the oscillator. The controller changes the frequency division ratio of the frequency divider based on an output signal from the temperature sensor and changes the frequency division ratio in a state in which the frequency division ratio is kept at the past value. Thus, phase noise deterioration in the synthesizer can be suppressed.

Abstract: A receiver includes an oscillator for generating a local oscillator signal, a frequency converter for heterodyning a received signal of one frequency band or a plurality of frequency bands into an intermediate frequency (IF) signals with using the local oscillator signal, a filter connected to an output of the frequency converter and having a cut-off frequency changeable, an analog-digital (AD) converter connected to an output of the filter to convert an analog signal of one frequency band or a plurality of frequency bands into a digital signal, a pre-stage detector connected to an output of the AD converter or connected between the filter and the AD converter to detect a signal level, and a controller for controlling the cut-off frequency of the filter based on the signal level detected by the pre-stage detector.

Abstract: A belt-like work (11) provided with a photosensitive layer is conveyed in a work conveying direction F at a work conveying speed V. An illuminating section (30) illuminates a photomask (29) in an exposure period T synchronized with the work conveying speed V. The photomask (29) is disposed at a proximity gap from the belt-like work (11). Mask patterns (33) on the photomask (29) are exposed on the belt-like work (11) to form periodic patterns thereon.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

Abstract: To provide a sheet shutter in which an urging member for urging an unwound, sheet toward the left and right outer side is provided so that the sheet is made to smoothly slide in the left and right direction and the wear of the urging member is suppressed. The sheet shutter according to the present invention is configured such that a rail groove is provided in each of left and right support posts, such that an inner rail is accommodated and supported in the rail grooves, such that engagement guides for guiding the lifting and lowering of the sheet formed in the inner rails, and such that, when the urging member is provided in the rail groove, an elastic sheet section for partitioning the inside of the rail groove into front and rear portions is provided at the urging member.

Abstract: To provide a sheet shutter which, when a shutter electrical unit is provided in a support post, prevents the shutter electrical unit from greatly projecting from the support post. The sheet shutter according to the present invention, which includes a sheet case, a support post arranged at each of the left and right end portions of the sheet case, a sheet guide section that is provided at each of left and right inner portions of the support posts to guide the lifting and lowering of the sheet, and a shutter electrical unit is featured in that a storage space which detachably accommodates and supports the shutter electrical unit along the direction of the support post is formed on the left and right outer side of the sheet guide section in the support post.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

Abstract: In an image rejection mixer, when a signal in the first radio frequency band is inputted to an input terminal, the first mixer and the second mixer convert the input signal in the first radio frequency band to a signal in the first intermediate frequency band by using the first local signal from a local signal oscillator, and a filter circuit attenuates an image interfering signal existing in the first intermediate frequency band by means of the first attenuation band. Also, when a signal in the second radio frequency band is inputted to the input terminal, the first mixer and the second mixer convert the input signal in the second radio frequency band to a signal in the second intermediate frequency band by using the second local signal from the local signal oscillator, and the filter circuit attenuates an image interfering signal existing in the second intermediate frequency band by means of the second attenuation band that is narrower than the first attenuation band.

Abstract: An object of the present invention is to provide a copolymer having the characteristic of developing high viscosity, and lowering its viscosity with an increase in rate of shear, particularly a copolymer having the characteristic of developing viscosity, and lowering its viscosity with an increase in rate of shear even in an aqueous coating composition that contains a surfactant. The present invention provides a copolymer obtainable by copolymerization of a monomer component (m) that includes: (m-1), a macromonomer having (i) a backbone that comprises a polymer chain having a number average molecular weight of 1,000 to 10,000 obtainable by polymerizing a monomer component (I) that contains 5 to 100 mass % of a C4-C24 alkyl-containing polymerizable unsaturated monomer (a), and (ii) a polymerizable unsaturated group; and (m-2) a polymerizable unsaturated monomer containing a hydrophilic group.

Abstract: A method for manufacturing a semiconductor device is disclosed in which, after semiconductor function regions and patterns of interlayer insulating films including required contact holes are formed on one main surface side of a semiconductor substrate, an aluminum film or an aluminum alloy film which is thick is formed all over the main surface side of the semiconductor substrate and brought into conductive contact with the surface of the semiconductor substrate including bottom surfaces of the contact holes so as to form a required electrode film. Formation of the aluminum film or the aluminum alloy film is divided into a plurality of steps so that the thickness of the aluminum film or the aluminum alloy film is formed gradually, and between every two of the plurality of steps of forming the aluminum film or the aluminum alloy film, there is provided a step of performing isotropic etching to flatten irregularities in a surface of the aluminum film or the aluminum alloy film formed in the previous step.

Abstract: Filter circuit includes Nth-order active filters switching circuit which switches shorting or non-shorting of active filter, and power-supply control circuit which controls such that a power supply of active filter is turned off when switching circuit shorts active filter. A receiver employing filter circuit turns off the power supply of active filter not needed when no interference wave exists within a given range from a desired frequency band. The foregoing structure allows lowering the power consumption of filter circuit.

Abstract: A battery casing for receiving a battery for driving an electric vehicle, including: a tray member made from a resin and supporting the battery; a support member provided under a lower face of the tray member and supporting the tray member from a bottom thereof; a standing wall provided so as to stand in the tray member; and a sheet metal tray member placed on the tray member. The sheet metal tray member includes a plurality of sheet metal recesses that receive the battery and a sheet metal flange placed on an upper face of the standing wall. The standing wall includes a through hole formed through the standing wall in a standing direction of the standing wall. The support member and the sheet metal flange are fastened to the tray member by means of a sheet metal fastening member provided through the through hole.

Abstract: An IGBT is disclosed which separated into two groups (first and second IGBT portions). First and second Zener diodes each composed of series-connected Zener diode parts are disposed so as to correspond to the groups respectively. Each of the first and second Zener diodes has an anode side connected to a corresponding one of first and second polysilicon gate wirings, and a cathode side connected to an emitter electrode. Temperature dependence of a forward voltage drop of each of first and second Zener diodes is used for reducing a gate voltage of a group rising in temperature to throttle a current flowing in the group and reduce the temperature of the group to thereby attain equalization of the temperature distribution in a surface of a chip. In this manner, it is possible to provide an MOS type semiconductor device in which equalization of the temperature distribution in a surface of a chip or among chips can be attained.