Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

Abstract: The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

Abstract: The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions.

Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.

Abstract: A radio LSI device includes an interfering wave detecting circuit that receives an RSSI signal for a current transmit/receive channel. The interfering wave detecting circuit includes a field intensity determiner that determines whether or not the value of the RSSI signal is greater than a predetermined threshold value. The interfering wave detecting circuit also includes a duration counter that counts the duration of an interfering wave whose RSSI value is greater than the predetermined threshold value. The interfering wave detecting circuit also includes a duration comparator that, if the duration exceeds a duration comparative value, generates an interrupt signal. The radio LSI device changes the setting of the current transmit/receive channel in response to the interrupt signal.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<Cl.

Abstract: The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: An optical information recording and reproducing apparatus for recording information on a recording medium by forming interference fringes generated by interference between an information beam and a reference beam on the recording medium and for reproducing the information by irradiating, with the reference beam, the recording medium, in which the interference fringes are formed. The apparatus includes a spatial light modulator for spatially modulating at least a portion of a light beam emitted from a light source into the information beam. A light sensing device reads the information beam extracted from the recording medium by the reference beam irradiated on the recording medium.

Abstract: In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region 34 of a transistor, with respect to a majority carrier, a region 36 whose voltage is set to a value lower than the reference value of product of the voltage of a drain region and Q (unit electric charge) is provided, or a potential barrier is provided around the drain region. In such a configuration, by controlling the voltage of the periphery of the drain region 34 connected to a reflection electrode 30 to be in a floating state, photo carriers generated in the semiconductor substrate are caused to be hardly guided in the drain region 34.

Abstract: An optical information recording and reproducing apparatus for recording information on a recording medium by forming interference fringes generated by interference between an information beam and a reference beam on the recording medium, and reproducing the information by irradiating the recording medium with the reference beam, in which the interference fringes are formed.

Abstract: In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region 34 of a transistor, with respect to a majority carrier, a region 36 whose voltage is set to a value lower than the reference value of product of the voltage of a drain region and Q (unit electric charge) is provided, or a potential barrier is provided around the drain region. In such a configuration, by controlling the voltage of the periphery of the drain region 34 connected to a reflection electrode 30 to be in a floating state, photo carriers generated in the semiconductor substrate are caused to be hardly guided in the drain region 34.

Abstract: An integrated circuit includes a volatile memory, a central processing unit that normally operates on a first clock, and an input-output circuit that transfers data in synchronization with a second clock having a lower frequency than the first clock. The integrated circuit has a power-saving mode in which the volatile memory loses its data and the central processing unit stops operating. The power-saving mode is preceded and followed by transitional periods during which the central processing unit uses the input-output circuit to save data from the volatile memory to an external memory device and restore the data from the external memory device to the volatile memory. During these transitional periods, the central processing unit operates on the second clock to conserve power.

Abstract: Wireless communications apparatus is provided by which power consumption is much more reduced in a wireless system composed of a base station and wireless terminal stations. The apparatus installed in the base station includes a transmitter/receiver and a controller. The transmitter/receiver compares an RSSI value indicating the received wave strength of a received wireless signal with a preset value periodically at time intervals set in a timer for defining a time to start and stop the controller. When the RSSI value indicates that the received wave strength is higher than the preset value, the controller is made operative, and then the demodulated received data of the received signal are sent to the controller. The controller operates when the preset value is set in the transmitter/receiver, and analyzes the received data when the received wave strength has exceeded the preset value.

Abstract: It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5<Leff/L<1, where L is the overall length and Leff is the length from the inside to edge of the diaphragm 3.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: A terminal is wirelessly connected to a base station. The terminal has a timer and a controller. The timer has a register for storing a beacon interval as a comparison value. The timer also includes a beacon counter for counting timer clocks. The timer also includes a comparator for generating an interrupt signal when an output value of the register and a count value of the counter match. The controller causes the counter to start counting when it receives a beacon for the first time. The controller causes the register to store the count value of the beacon counter when it receives a beacon next time. Since the beacon interval is measured using the timer clock in the terminal, instead of using the beacon interval information included in the beacon, it is unnecessary to strictly match the clock precision of the base station and the terminal, and therefore the cost of the system decreases.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: A service processing server for providing a communication processing service with an information providing server, to a cell phone belonging to a network capable of identifying subordinate cell phones, and including an application receiving part for receiving first communication terminal-specific information to specify a specific cell phone, and service-specific information in association with each other; a specific information generating part for generating second communication terminal-specific information; an approval requesting part for transmitting approval request information containing the service-specific information and the second communication terminal-specific information, to the information providing server; a result receiving part for receiving approval result information returned; and a registering part for performing a registration process for providing the communication processing service to the specific cell phone in accordance with reception of the approval result information.

Abstract: A solid state image pickup apparatus capable of reading a signal at a high speed while securing a wide dynamic range is provided. A signal based on a part of charges having overflown a photoelectric conversion unit (201) to a floating diffusion region (205) is quantified at an upper bit of an AD converter (206), and a signal based on charges stored in the photoelectric conversion unit (201) is quantified at a lower bit of the AD converter (206). Thereby, multi-bit data having a wide dynamic range can be taken out at a speed as high as possible without increasing the number of devices.