Abstract: A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.

Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.

Abstract: An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.

Abstract: A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.

Abstract: A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (51) disposed in a semiconductor substrate (5B) wherein each photoelectric conversion portion (51) includes: a P-type charge accumulating area (107) containing a first impurity; and an N-type well portion (102) that, along with the P-type charge accumulating area, configures a photodiode, and each well portion has: an N-type first semiconductor region (102a) containing arsenic at a first density; an N-type second semiconductor region (102b,102C) disposed below the first semiconductor region and containing arsenic at a second density that is lower than the first density; and an N-type third semiconductor region (102d) disposed below the second semiconductor region and containing a second impurity at a third density that is higher than the first density.

Abstract: In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region 34 of a transistor, with respect to a majority carrier, a region 36 whose voltage is set to a value lower than the reference value of product of the voltage of a drain region and Q (unit electric charge) is provided, or a potential barrier is provided around the drain region. In such a configuration, by controlling the voltage of the periphery of the drain region 34 connected to a reflection electrode 30 to be in a floating state, photo carriers generated in the semiconductor substrate are caused to be hardly guided in the drain region 34.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions.

Abstract: Provided is a manufacturing method of a solid-state image pickup apparatus including: a step of forming a first semiconductor region of a first conductivity type in a semiconductor substrate, according to an ion implantation method from a first surface of the semiconductor substrate; a step of forming a plurality of photoelectric conversion regions between the first semiconductor region and the first surface of the semiconductor substrate; a first removing step by polishing the semiconductor substrate from a second surface of the semiconductor substrate; and a second removing step by reducing a thickness of the semiconductor substrate from the second surface of the semiconductor substrate, in a speed lower than that of the first removing step, after the first removing step, in which the second removing step continues until the first semiconductor region is exposed.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: A holographic memory system includes a spatial light modulator having multiple modulators for spatially modulating at least a portion of a light beam emitted from a light source and rendering it as an information light beam, and a light sensing device for reading the information light beam taken out of a recording medium. The spatial light modulator and the light sensing device are integrally formed on the same substrate.

Abstract: An optical information recording and reproducing apparatus for recording information on a recording medium by forming interference fringes generated by interference between an information beam and a reference beam on the recording medium and for reproducing the information by irradiating, with the reference beam, the recording medium, in which the interference fringes are formed. The apparatus includes a spatial light modulator for spatially modulating at least a portion of a light beam emitted from a light source into the information beam. A light sensing device reads the information beam extracted from the recording medium by the reference beam irradiated on the recording medium.

Abstract: A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.

Abstract: A service processing server for providing a communication processing service with an information providing server, to a cell phone belonging to a network capable of identifying subordinate cell phones, and including an application receiving part for receiving first communication terminal-specific information to specify a specific cell phone, and service-specific information in association with each other; a specific information generating part for generating second communication terminal-specific information; an approval requesting part for transmitting approval request information containing the service-specific information and the second communication terminal-specific information, to the information providing server; a result receiving part for receiving approval result information returned; and a registering part for performing a registration process for providing the communication processing service to the specific cell phone in accordance with reception of the approval result information.

Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.

Abstract: Provided is a clip that allows two securing members to be firmly joined to each other without requiring a special working process to the applied to either one of the securing members. The clip for securing joining a first securing member to a second securing member comprises a base plate portion formed with a through hole, a first clamping piece extending from the base plate portion in a front side direction, and a second clamping piece extending from a part of the base plate portion intermediate between the first clamping piece and through hole in the front side direction and further extending above the through hole. A threaded member is passed into the through hole from a back side of the base plate portion to fixedly attach the second securing member to the back side of the base plate portion.

Abstract: A data transceiver that determines according to signal strength of a received radio wave whether a receiving operation should be continued. A measurement unit counts demodulation clocks of a demodulator and supplies a measurement result indicating instability of reception data until the count reaches a predetermined target count value, and supplies a measurement result indicating stability of the reception data after the count value is reached. A determinator receives the result of measurement indicative of instability, and outputs a determination result indicative of stopping a receiving operation regardless of signal strength. When the determinator receives the result of measurement indicative of stability, the determinator outputs a determination result corresponding to the signal strength of the reception data. Thus, receiving operation is advanced after reception data is sufficiently stable.

Abstract: The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

Abstract: A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.