Abstract: An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Abstract: To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.

Abstract: To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.

Abstract: Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.

Abstract: Provided is a semiconductor device having improved performance and an improved manufacturing yield. Over photodiodes formed in a semiconductor substrate, a plurality of first to third embedded insulating films are stacked to form a waveguide for light incident on each of the photodiodes. The first embedded insulating film is formed simultaneously with plugs when the plugs are formed. The second embedded insulating film is formed simultaneously with first wires when the first wires are formed. The third embedded insulating film is formed simultaneously with second wires when the second wires are formed.

Abstract: Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.

Abstract: An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Abstract: A semiconductor device is improved in performance by preventing the generation of color mixing in its pixels which form an image pickup device. In a region between adjacent pixels, which is a region for separating regions where respective color filters of the pixels from each other, septum walls are formed. The septum walls are each made of an insulator film smaller in refractive index than the color filters, and an insulator film which is formed to cover side walls of the insulator film and is larger in refractive index than the color filters. In this way, a light ray radiated into the upper surface of each of the septum walls can be prevented from invading the pixels adjacent to the wall.

Abstract: An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Abstract: An image forming apparatus includes a toner carrying roller for carrying a toner, an image carrying member, contacting the toner on the toner carrying roller, on which a toner image is to be formed with the toner, and an electrode portion provided at an opposing position in which the electrode portion opposes the toner carrying roller via the image carrying member interposed therebetween. The toner image is formed on the image carrying member by changing a value of a voltage, on the basis of image information, applied to the electrode portion, and the toner carried on the toner carrying roller and the image carrying member contact each other in a toner contact area. The toner is moved between the toner carrying roller and the image carrying member in a toner movement area by changing the value of the voltage applied to the electrode portion, and the toner movement area is present downstream of the toner contact area with respect to a movement direction of the image carrying member.

Abstract: Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.

Abstract: A charging apparatus includes a latent image bearing member having a charge generating layer for generating an electric charge by receiving light energy; a light source for emitting light energy for generating the electric charge in the charge generating layer; an electrode; a bias voltage applying portion for applying a bias voltage to the electrode; and an elastic member, which is insulative and transparent, for contacting the electrode to a surface of the latent image bearing member. The electric charge is generated in the charge generating layer by reception of the light energy emitted from the light source, and the surface of the latent image bearing member is electrically charged by applying the bias voltage from the bias voltage applying portion to the electrode. The electrode is provided on the elastic member and is contacted to the surface of the latent image bearing member in a contact area and does not extend to an outside of the contact area.

Abstract: A device includes: a static magnetic field generating device including static magnetic field generating sources generating a homogeneous magnetic field in a space; gradient magnetic field generating sources superimposing a gradient magnetic field on the homogeneous magnetic field, and conductor rings arranged between the static magnetic field generating sources and the gradient magnetic field generating sources in a pair of arranging regions on both sides in a direction of the homogeneous magnetic field in a region where the homogeneous magnetic field is generated (imaging region), respectively, the conductor rings being separated from each other and making a pair. The conductor rings are mechanically connected to the gradient magnetic field generating device or the static magnetic field generating device. This provides an MRI device 1 capable of reduction in vibration with suppression of the image quality deterioration of the tomographic images.

Abstract: In a gradient magnetic field coil device including: a plurality of main coils generating in an imaging region of a magnetic field resonance imaging device a magnetic field distribution in which an intensity linearly inclines; and a plurality of shield coils, arranged on an opposite side of the imaging region across the main coils, suppressing residual magnetic field generated by the main coils on the opposite side. The plurality of main coils and the plurality of shield coils are connected in series. The device further includes a plurality of current adjusting devices, connected to the shield coils in parallel, independently adjusting currents flowing through the shield coils, respectively, to enhance symmetry of the residual magnetic field. The gradient magnetic field coil device is provided which can suppress generation of eddy current magnetic field even if there is a relative position deviation between the main coils and shield coils.

Abstract: Provided is a semiconductor device having improved performance and an improved manufacturing yield. Over photodiodes formed in a semiconductor substrate, a plurality of first to third embedded insulating films are stacked to form a waveguide for light incident on each of the photodiodes. The first embedded insulating film is formed simultaneously with plugs when the plugs are formed. The second embedded insulating film is formed simultaneously with first wires when the first wires are formed. The third embedded insulating film is formed simultaneously with second wires when the second wires are formed.

Abstract: To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.

Abstract: An image forming apparatus includes a toner carrying member for carrying a toner; an image carrying member, contacting the toner on the toner carrying member, on which a toner image is to be formed with the toner; and an electrode portion provided at an opposing position in which the electrode portion opposes the toner carrying member via the image carrying member interposed therebetween. The toner image is formed on the image carrying member by changing a value of a voltage, on the basis of image information, applied to the electrode portion. The toner carried on the toner carrying member and the image carrying member contact each other in a toner contact area. The toner is moved between the toner carrying member and the image carrying member in a toner movement area by changing the value of the voltage applied to the electrode portion. The toner movement area is present downstream of the toner contact area with respect to a movement direction of the image carrying member.

Abstract: An image forming apparatus includes an image bearing member on which an electrostatic latent image is to be formed and a developing device for developing the electrostatic latent image by supplying a developer to the image bearing member. The developing device includes a developer container; a rotatable developer carrying member, including a first electrode member; and a developer supplying member, which includes a surface foam layer and a second electrode member. The apparatus further includes a measuring device for measuring a remaining developer amount in the developer container by detecting electrostatic capacity between the first and second electrode members and a replenishing device for replenishing the developer supplying member by rotating the developer supplying member at a speed slower than a speed during image formation. When the measured remaining developer amount is not more than a threshold, the developer is replenished, and thereafter the remaining developer amount is again measured.

Abstract: A developing apparatus including a developing container for containing developer, the developing container having an opening portion, a developer carrying member for carrying the developer at the opening portion, a detecting member for detecting a developer amount, the detecting member detecting a capacitance between the developer carrying member and the detecting member, and a force receiving portion for receiving a force and moving the developing container between a first position in which a developing operation is performed by the developer carrying member and a second position in which the developing operation is not performed, wherein the capacitance can be detected in the second position, and the detecting member is a rotatable developer supplying member for supplying the developer to the developer carrying member, the developer supplying member including a foam layer in which the developer can enter.

Abstract: A charging apparatus includes a latent image bearing member having a charge generating layer for generating an electric charge by receiving light energy; a light source for emitting light energy for generating the electric charge in the charge generating layer; an electrode; a bias voltage applying portion for applying a bias voltage to the electrode; and an elastic member, which is insulative and transparent, for contacting the electrode to a surface of the latent image bearing member. The electric charge is generated in the charge generating layer by reception of the light energy emitted from the light source, and the surface of the latent image bearing member is electrically charged by applying the bias voltage from the bias voltage applying portion to the electrode. The electrode is provided on the elastic member and is contacted to the surface of the latent image bearing member in a contact area and does not extend to an outside of the contact area.