Abstract: An ultrasonic wave generation device including: an ultrasonic wave generation source; an ultrasonic wave condensation part; and a waveguide. The ultrasonic wave condensation part has a first reflection surface opposed to the ultrasonic wave generation source and a second reflection surface opposed to the first reflection surface. The first reflection surface reflects the ultrasonic wave, generated from the ultrasonic wave generation source, toward the second reflection surface. The second reflection surface reflects the ultrasonic wave, which has been reflected by the first reflection surface, toward the waveguide so as to introduce the ultrasonic wave into the waveguide. The waveguide protrudes from the first reflection surface to a side opposite the second reflection surface. A recessed portion is formed from the first reflection surface to the second reflection surface side along an outer circumferential surface of the waveguide.

Abstract: An inline-type strainer including a drain line and a screen configured to be attachable to and detachable from a housing is provided. A screen is supported to be attachable to and detachable from a lid. A lid coupling mechanism that couples a housing and the lid when the lid is attached to the housing is provided between a bottom surface of the housing facing the filter chamber and a lower end of the lid. A lower discharge flow path is formed in a lower coupling element on a side close to the housing constituting the lid coupling mechanism, and an upper discharge flow path is formed in the upper coupling element on a side close to the lid constituting the lid coupling mechanism. When the lid is attached to the housing, a coupling state is established between the upper and lower coupling elements, and the upper and lower discharge flow paths communicate with each other, and thus a drain line is constructed.

Abstract: An image capturing device includes an imaging device and circuitry. The imaging device captures an image. The circuitry defines a point of interest in the image, converts the defined point of interest in accordance with attitude information of the image capturing device, and cuts out a viewable area from the image. The viewable area includes the converted point of interest.

Abstract: As an antitumor drug which is excellent in terms of antitumor effect and safety, there is provided an antibody-drug conjugate in which an antitumor compound represented by the following formula is conjugated to an antibody via a linker having a structure represented by the following formula: -L1-L2-LP-NH—(CH2)n1-La-Lb-Lc- wherein the antibody is connected to the terminal of L1, and the antitumor compound is connected to the terminal of Lc with the nitrogen atom of the amino group at position 1 as a connecting position.

Abstract: An input device includes: a plurality of input members; an upper surface having a right region in which a part of the plurality of input members is disposed, a left region in which another part of the plurality of input members is disposed, and a center region that is a region between the right region and the left region; and a light emitting region formed along an outer edge of the center region. The light emitting region includes a first light emitting portion configured to indicate identification information assigned to a plurality of input devices connected to an information processing apparatus, and a second light emitting portion configured to emit light based on information different from the identification information.

Abstract: A surface mount inductor includes a coil including a wound portion and a feeder end portion drawn out from the wound portion, a compact that contains a magnetic powder and that encapsulates the coil, and an external terminal disposed on the compact and connected to the coil. The compact has surfaces including two pressed surfaces, opposing each other in a direction of an axis of the wound portion and formed by being pressed in the direction of the axis, and a non-pressed surface, adjacent to the two surfaces and not pressed. The coil is disposed so that the axis of the wound portion is parallel to a mount surface of the compact. The mount surface is included in the non-pressed surface, the feeder end portion is exposed from the mount surface, and the external terminal is formed on only the non-pressed surface and connected to the feeder end portion.

Abstract: A screw compressor for compressing a working medium sucked through a suction opening and discharging the compressed working medium through a delivery opening, wherein the screw compressor includes: a male rotor and a female rotor that rotate while meshing with each other; a casing that houses the male rotor and the female rotor and is provided with a bore which forms a working chamber designed, together with the male rotor and the female rotor, to compress the working medium; a drive unit that rotationally drives at least one of the male rotor and the female rotor; a working chamber closing unit that forms a suction port for sucking the working medium into the working chamber and closes the working chamber when the working chamber reaches a specified capacity; and a suction space that connects the suction opening and the suction port to allow communication therebetween, wherein an open space that connects the suction opening and the suction port to allow communication therebetween is provided between a shaft

Abstract: An ultrasonic generator includes an ultrasonic wave source and a converging portion. The converging portion includes a first reflecting portion which reflects the ultrasonic wave generated by the ultrasonic wave source on its first reflecting surface, a second reflecting portion which reflects the ultrasonic wave reflected by the first reflecting surface on its second reflecting surface, and a waveguide serving as a transmission path for the ultrasonic wave. The waveguide is disposed such that the ultrasonic wave reflected by the second reflecting surface is introduced through an introduction portion thereof. The focal point of the second reflecting surface and the focal point of the first reflecting surface are disposed such that the ultrasonic wave reflected by the second reflecting surface becomes a plane wave.

Abstract: A display device includes: a light emitting panel having a light emitting surface; a cover panel configured to cover the light emitting surface; and a cooling unit that is arranged in a space between the cover panel and the light emitting panel and configured to cool the light emitting panel. The cooling unit includes a frame portion that surrounds an outer periphery of the space, and a coolant configured to be supplied into the space from outside of the space and discharged from the space to the outside of the space.

Abstract: An ultrasonic generator includes an ultrasonic wave source and a converging portion. The converging portion includes a first reflecting portion which reflects the ultrasonic wave generated by the ultrasonic wave source on its first reflecting surface, a second reflecting portion which reflects the ultrasonic wave reflected by the first reflecting surface on its second reflecting surface, and a waveguide serving as a transmission path for the ultrasonic wave. The waveguide is disposed such that the ultrasonic wave reflected by the second reflecting surface is introduced through an introduction portion thereof. The focal point of the second reflecting surface and the focal point of the first reflecting surface are disposed such that the ultrasonic wave reflected by the second reflecting surface becomes a plane wave.

Abstract: In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.

Abstract: A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

Abstract: A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

Abstract: A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

Abstract: In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.

Abstract: According to one embodiment, an apparatus for manufacturing a display device, includes: a first holding section configured to hold a first substrate; a second holding section configured to hold a second substrate; a turning section configured to turn the first holding section such that the first substrate and the second substrate face each other; a support section configured to support the first holding section after the turning; an adjustment section; and an elevation section. The adjustment section is provided at an upper end of the support section and is configured to adjust a distance between the first holding section after the turning and the upper end of the support section. The elevation section is configured to elevate the second holding section and attach the first substrate and the second substrate via an adhesive layer.

Abstract: An input shaft (1) connectable to an engine (5), an output gear (2), a transmission case (3) and a Ravigneaux planetary gear unit (4) are provided. Four rotational elements of the Ravigneaux planetary gear unit (4) are a single pinion side sun gear (Ss), a carrier (C), a ring gear (R) and a double pinion side sun gear (Sd) which are arranged orderly on a common speed diagram. The single pinion side sun gear (Ss) is constantly connected to a motor/generator (6), and the ring gear (R) is constantly connected to the output gear (2). And, with usage of a low & reverse clutch (L&R/C), a high clutch (H/C) and a low brake (L/B), a first speed (1st), a second speed (2nd), a third speed (3rd) and a stepless change speed (eCVT) are established.

Abstract: In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.

Abstract: A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

Abstract: The present disclosure provides compositions and methods for treating pruritis and for treating certain types of pain.