Abstract: An electroconductive-film-coated substrate includes a glass substrate and an electroconductive film disposed on one main surface of the glass substrate. The electroconductive film has an inclined portion in a peripheral edge. A distance from a position in the inclined portion where a thickness of the electroconductive film is 10% of a film thickness of a center of the electroconductive film to an edge end of the glass substrate is 3.00 mm or less. A distance from an end of the inclined portion to the edge end of the glass substrate is longer than 0.00 mm.

Abstract: A method and apparatus for determining the position of a laser scanner using one or more optical targets, each arranged at a known point. The apparatus includes: a ground control point position obtaining part which obtains information of arrangement positions of multiple optical reflection targets; a laser scanner approximate position data obtaining part which obtains an approximate position of a laser scanner; a laser scanning data obtaining part which obtains data of multiple luminescent points; a processing objective point extracting part which extracts multiple luminescent points having luminance exceeding a specific threshold value; and a laser scanner position calculating part which gives data of the arrangement position of the optical reflection target to each of the extracted multiple luminescent points so as to calculate position of the laser scanner.

Abstract: A hollow profile-manufacturing extrusion die includes a mandrel that molds an inner peripheral surface of a hollow part, and bridges for supporting the mandrel. The mandrel is disposed so as to correspond to a die hole that molds an outer peripheral surface of the hollow profile. The bridges are disposed at positions corresponding to between the hollow part and side surfaces in the hollow profile, and are not present at positions corresponding to between the hollow part and a lower surface.

Abstract: Provided is an attachment device that is able to improve the stability of connection between a cable connector and a connector of an input device and also facilitate the operation for engaging an engagement section with the input device. The attachment device includes a connector retaining section and an engagement member. The engagement member is provided on the connector retaining section, and includes an engagement section for engaging with the input device. The engagement member is movable between an engagement position and an accommodation position. The engagement position is a position where the engagement section is protruded from the connector retaining section. The accommodation position is a position where the engagement section is accommodated in the connector retaining section.

Abstract: A wick used for heat transport, the wick including a material containing a nanofiber and/or a two-dimensional substance represented by: MQaOb, wherein M is at least one element selected from Groups 3, 4, 5, 6, or 7, Q is at least one element selected from Groups 12, 13, 14, 15, or 16, and excluding O, a is more than 0 but not more than 2, and b is more than 0 but not more than 2.

Abstract: An exterior member of an input device is enabled to be removed easily. A cover lock member of the input device has a second engaging portion for engaging with a first engaging portion of an upper cover as an exterior member. The cover lock member is movable between a locking position at which the second engaging portion engages with the first engaging portion and an unlocking position at which the engagement between the second engaging portion and the first engaging portion is released.

Abstract: There is provided a controller for receiving input from a user, including: a plurality of input elements, each operating to receive respective operative input from a user, the respective operative input being processed and transmitted to an external apparatus for manipulating an application program during execution; a memory having a plurality of sets of profile data stored therein, each set of profile data includes a respective profile ID in association with respective location information indicative of where a respective one of the input elements is located on the controller; a communication unit operating to receive a user-selected one of the plurality of sets of profile data; and a control unit operating to control the controller based on the selected profile data set received from the communication unit.

Abstract: As an antitumor drug which is excellent in terms of antitumor effect and safety, there is provided an antibodydrug conjugate in which an antitumor compound represented by the following formula is conjugated to an antibody via a linker having a structure represented by the following formula: -L1-L2-LP-NH—(CH2)n1-La-Lb-Lc- wherein the antibody is connected to the terminal of L1, and the antitumor compound is connected to the terminal of Lc with the nitrogen atom of the amino group at position 1 as a connecting position.

Abstract: Disclosed herein is an input device including a first microphone, an exterior member that accommodates the first microphone, and a first sound hole penetrating the exterior member to be connected to the first microphone. An exterior surface of the exterior member has one or a plurality of wall portions that surround the first sound hole.

Abstract: An electroconductive-film-coated substrate includes a glass substrate and an electroconductive film disposed on one main surface of the glass substrate. The electroconductive film has an inclined portion in a peripheral edge. A distance from a position in the inclined portion where a thickness of the electroconductive film is 10% of a film thickness of a center of the electroconductive film to an edge end of the glass substrate is 3.00 mm or less. A distance from an end of the inclined portion to the edge end of the glass substrate is longer than 0.00 mm.

Abstract: An image capturing apparatus comprising circuitry to: perform an image capturing process to repeatedly generate image frames included in a moving image captured by an imaging device; transmit the image frames repeatedly generated to a communication terminal at a site different from a site at which the image capturing apparatus is located; accept a lock instruction to lock an image frame to be transmitted to the communication terminal among the image frames; and repeatedly transmit the image frame for which the lock instruction is received to the communication terminal in response to the acceptance of the lock instruction.

Abstract: An ultrasonic wave generation device including: an ultrasonic wave generation source; an ultrasonic wave condensation part; and a waveguide. The ultrasonic wave condensation part has a first reflection surface opposed to the ultrasonic wave generation source and a second reflection surface opposed to the first reflection surface. The first reflection surface reflects the ultrasonic wave, generated from the ultrasonic wave generation source, toward the second reflection surface. The second reflection surface reflects the ultrasonic wave, which has been reflected by the first reflection surface, toward the waveguide so as to introduce the ultrasonic wave into the waveguide. The waveguide protrudes from the first reflection surface to a side opposite the second reflection surface. A recessed portion is formed from the first reflection surface to the second reflection surface side along an outer circumferential surface of the waveguide.

Abstract: An ultrasonic generator includes an ultrasonic wave source and a converging portion. The converging portion includes a first reflecting portion which reflects the ultrasonic wave generated by the ultrasonic wave source on its first reflecting surface, a second reflecting portion which reflects the ultrasonic wave reflected by the first reflecting surface on its second reflecting surface, and a waveguide serving as a transmission path for the ultrasonic wave. The waveguide is disposed such that the ultrasonic wave reflected by the second reflecting surface is introduced through an introduction portion thereof. The focal point of the second reflecting surface and the focal point of the first reflecting surface are disposed such that the ultrasonic wave reflected by the second reflecting surface becomes a plane wave.

Abstract: A display device includes: a light emitting panel having a light emitting surface; a cover panel configured to cover the light emitting surface; and a cooling unit that is arranged in a space between the cover panel and the light emitting panel and configured to cool the light emitting panel. The cooling unit includes a frame portion that surrounds an outer periphery of the space, and a coolant configured to be supplied into the space from outside of the space and discharged from the space to the outside of the space.

Abstract: An ultrasonic generator includes an ultrasonic wave source and a converging portion. The converging portion includes a first reflecting portion which reflects the ultrasonic wave generated by the ultrasonic wave source on its first reflecting surface, a second reflecting portion which reflects the ultrasonic wave reflected by the first reflecting surface on its second reflecting surface, and a waveguide serving as a transmission path for the ultrasonic wave. The waveguide is disposed such that the ultrasonic wave reflected by the second reflecting surface is introduced through an introduction portion thereof. The focal point of the second reflecting surface and the focal point of the first reflecting surface are disposed such that the ultrasonic wave reflected by the second reflecting surface becomes a plane wave.

Abstract: In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.

Abstract: A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

Abstract: A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

Abstract: A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

Abstract: In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.