Abstract: A semiconductor device which is capable of avoiding an increase in pattern ratio and allowing wiring dummy patterns to improve global steps developed by CMP upon insertion of the dummy patterns which are different from an actual wiring pattern. The semiconductor device has a configuration wherein a gate wiring pattern is formed on a semiconductor substrate, a plurality of dummy patterns are provided therearound, and a BPSG oxide film which is flattened by CMP is formed on the gate wiring pattern and the dummy patterns as an interlayer insulating film. In the semiconductor device, the dummy patterns are formed so as to include pattern non-forming regions such as slits.

Abstract: A semiconductor device which is capable of avoiding an increase in pattern ratio and allowing wiring dummy patterns to improve global steps developed by CMP upon insertion of the dummy patterns which are different from an actual wiring pattern. The semiconductor device has a configuration wherein a gate wiring pattern is formed on a semiconductor substrate, a plurality of dummy patterns are provided therearound, and a BPSG oxide film which is flattened by CMP is formed on the gate wiring pattern and the dummy patterns as an interlayer insulating film. In the semiconductor device, the dummy patterns are formed so as to include pattern non-forming regions such as slits.

Abstract: A temperature sensor includes: a temperature-sensing element comprising a temperature-sensing portion and an element electrode wire connected to the temperature-sensing portion; a sheath member comprising a sheath tube and a sheath core wire extending from the sheath tube, the sheath core wire being joined to the element electrode wire to form a joint portion; an enclosing member comprising a closed-bottomed tube having a bottom portion at one end, and enclosing at least the temperature-sensing element and the joint portion; and a holding material filling at least a portion of a space enclosed by the enclosing member extending between a front end face of the temperature-sensing portion and the bottom portion of the enclosing member. The element electrode wire includes a bend at an intermediate portion of the element electrode wire between the temperature-sensing portion and the joint portion.

Abstract: To provide a heating device of a shape memory alloy member that requires only setting a minimum level value of, for example, the diameter of a wire, does not depend on the other conditions such as the length of the wire, and hence can be easily used.

Abstract: A three dimensional image display device includes a display panel configured to display an image, and a lens plate which is a plate member having a lenticular lens and which is provided to the display panel with a frame-shaped adhesive member interposed in between while having the lenticular lens facing the display panel. In this image display, a hermetic inner space is formed by the display panel, the adhesive member and the lens plate, and the internal pressure of the inner space is lower than the atmospheric pressure.

Abstract: There is provided a gas sensor for measuring the concentration of a specific gas component in a gas under measurement, including a gas diffusion rate limiting portion, a measurement chamber communicating with an atmosphere of the gas under measurement through the gas diffusion rate limiting portion, a sensor element having an ion-conductive layer with first and second surfaces, a first electrode disposed in contact with the first surface of the ion-conductive layer within the measurement chamber and a second electrode disposed in contact with the second surface of the ion-conductive layer and communicating exclusively with the atmosphere of the gas under measurement and a cylindrical support member installing therein the sensor element with the first and second surfaces of the ion-conductive layer directed toward front and base end sides of the support member, respectively.

Abstract: First components and second components in which bumps are formed on the lower surface thereof and laminate structures are formed by mounting them to stack with each other on a circuit board 13 are picked up from a component supply unit 1 using a placement head 16, and by lifting and lowering the placement head 16 holding the first components and the second components relative to a paste transfer device 5 supplying a flux 10 in the manner such as coating films having two types of different thicknesses, the flux 10 is supplied to the bumps of the plurality of components in a bundle using a transfer coating method. With such a configuration, it is possible to efficiently perform a component mounting with a satisfactory adhesiveness by ensuring an optimal amount of application quantity of a paste.

Abstract: A process for producing a radioactive fluorine compound which comprises a step in which [18O] water containing [18F] fluoride ions is introduced into a column packed with an ion-exchange resin to collect the [18F] fluoride ions and a step in which a substrate is reacted with the [18F] fluoride ions collected, characterized in that the ion-exchange resin is a resin represented by the following general formula (1): (wherein n is an integer of 1 to 10; R represents a linear or branched, C1-8 monovalent hydrocarbon group; P represents a styrene-based copolymer; and Y represents an anion).

Abstract: A method of making a semiconductor device manufacturing mask, which makes it possible to suppress a semiconductor-device global step and simply manufacture a highly reliable semiconductor device. Square dummy patterns each having one side of, for example, 0.25 ?m or less are inserted into an area other than an actual pattern lying within a semiconductor device manufacturing mask to thereby uniformize a pattern density, enable etching processing without changing conditions set for every semiconductor device manufacturing mask an prevent an increase in global step of a post-CMP interlayer insulating film.

Abstract: By making use of the remaining film thickness distribution (CMP pattern ratio) that is a distribution of estimates of the remaining film thickness after the CMP process, the first region A is abstracted from the patterning mask that corresponds to the region X where values of the remaining film thickness distribution is higher than the first threshold. Correction of the layout of the first dummy mask pattern (40a) is designed for forming the first dummy active region having a width no less than a predetermined width on the semiconductor outside the active region forming mask pattern (16) within the region A. In accompany with this patterning mask correction, correction of the insulation film removing mask pattern (40a?) is designed in the first region A? of the insulation film removing mask so as to removed a predetermined area of the insulation film formed on the first dummy active region. Based on these designs, actual patterning and insulation film removing masks are formed.

Abstract: A gas sensor (10) including a measurement chamber (28) into which a gas GS is flown and a detection element main body (40) facing the measurement chamber (28). The detection element main body (40) includes an element case 42, and a protective film (48) is adhered to a bottom surface thereof. An acoustic matching plate (50) and a piezoelectric element (51) of a substantially columnar shape and a tube body (52) provided in a position surrounding the acoustic matching plate 50 and the piezoelectric element 51 are housed in the element case (42). A filler is then introduced into the element case (42), whereby the acoustic matching plate (50), the piezoelectric element (51), and the tube body (52) are sealed by a filled layer (99).

Abstract: A method of making a semiconductor device manufacturing mask, which makes it possible to suppress a semiconductor-device global step and simply manufacture a highly reliable semiconductor device. Square dummy patterns each having one side of, for example, 0.25 ?m or less are inserted into an area other than an actual pattern lying within a semiconductor device manufacturing mask to thereby uniformize a pattern density, enable etching processing without changing conditions set for every semiconductor device manufacturing mask an prevent an increase in global step of a post-CMP interlayer insulating film.

Abstract: An optical fiber collimator including a microlens array and single mode optical fibers. Microlens elements are formed in two surfaces of the transparent substrate. Two opposing microlens elements each function as a collimator lens. The single mode optical fiber is optically coupled to the collimator lens.

Abstract: A method for estimating relative remaining film thickness distribution (CMP pattern ratio distribution) among sparse and dense active regions after CMP on the basis of the layout of a mask pattern in a one-chip mask region. In each mask pattern, a reduced region is created by removing an area of a predetermined width from the mask pattern along the edge of the mask pattern. Then, the one-chip mask region is segmentalized into predetermined regions to create a plurality of segmentalized regions. On each of the segmentalized regions, the area ratio of all reduced regions occupying a region that includes a segmentalized region at a fixed position and has the same size and shape as those of the foregoing one-chip mask region is acquired. Based on the acquired area ratio, the distribution of remaining film thickness of a surface protection film in the one-chip mask region, i.e., the CMP pattern ratio, is acquired.

Abstract: A gas sensor includes an element case 42 with an internal peripheral surface formed as a taper surface 100. A portion of a housing section 43 surrounded by the taper surface 100 and a protective film 48 is filled with a filler 49. When the filler 49 thermally expands at high temperature, the filler 49 is subjected to a component of force in an upward direction by the taper surface 100. Therefore, projection of an element portion 44 involving deformation of the protective film 48 is suppressed, a change ?L of a propagation distance L to a reflecting section 33 is also suppressed, and a detection accuracy never decreases. In addition, reverberation is reduced.

Abstract: Disclosed herein are a semiconductor device capable of avoiding an increase in pattern ratio and allowing wiring dummy patterns to improve global steps developed by CMP upon insertion of the dummy patterns different from an actual wiring pattern. The semiconductor device has a configuration wherein a gate wiring pattern is formed on a semiconductor substrate, a plurality of dummy patterns are provided therearound, and a BPSG oxide film flattened by CMP is formed on the gate wiring pattern and the dummy patterns as an interlayer insulating film. In the semiconductor device, the dummy patterns are formed so as to include pattern non-forming regions such as slits.

Abstract: A semiconductor device manufacturing method and a semiconductor device manufacturing mask both of which make it possible to suppress a semiconductor-device global step and simply manufacture a highly-reliable semiconductor device. Square dummy patterns each having one side of, for example, 0.25 ?m or less are inserted into an area other than an actual pattern lying within a semiconductor device manufacturing mask to thereby uniformize a pattern density, enable etching processing without changing conditions set for every semiconductor device manufacturing mask and prevent an increase in global step of a post-CMP interlayer insulating film.

Abstract: An optical fiber collimator including a microlens array and single mode optical fibers. Microlens elements are formed in two surfaces of the transparent substrate. Two opposing microlens elements each function as a collimator lens. The single mode optical fiber is optically coupled to the collimator lens.

Abstract: There is provided a gas sensor for measuring the concentration of a specific gas component in a gas under measurement, including a gas diffusion rate limiting portion, a measurement chamber communicating with an atmosphere of the gas under measurement through the gas diffusion rate limiting portion, a sensor element having an ion-conductive layer with first and second surfaces, a first electrode disposed in contact with the first surface of the ion-conductive layer within the measurement chamber and a second electrode disposed in contact with the second surface of the ion-conductive layer and communicating exclusively with the atmosphere of the gas under measurement and a cylindrical support member installing therein the sensor element with the first and second surfaces of the ion-conductive layer directed toward front and base end sides of the support member, respectively.

Abstract: By making use of the remaining film thickness distribution (CMP pattern ratio) that is a distribution of estimates of the remaining film thickness after the CMP process, the first region A is abstracted from the patterning mask that corresponds to the region X where values of the remaining film thickness distribution is higher than the first threshold. Correction of the layout of the first dummy mask pattern (40a) is designed for forming the first dummy active region having a width no less than a predetermined width on the semiconductor outside the active region forming mask pattern (16) within the region A. In accompany with this patterning mask correction, correction of the insulation film removing mask pattern (40a′) is designed in the first region A′ of the insulation film removing mask so as to removed a predetermined area of the insulation film formed on the first dummy active region. Based on these designs, actual patterning and insulation film removing masks are formed.