Abstract: A sensor includes a complex-transfer-function calculator that calculates a complex transfer function from received signals, a reflection-coefficient calculator that calculates a reflection coefficient using a complex transfer function when an object to be detected is arranged at one of L positions and an ideal complex transfer function which is a theoretical value for the position at which the object to be detected is arranged, various normalizers that calculate a normalized reflection coefficient by normalizing the reflection coefficient, a reflection-coefficient interpolator that calculates an interpolated reflection coefficient by interpolation calculation of the reflection coefficient using the normalized reflection coefficient for each coordinates used in position estimation of the object to be detected, and a position estimator that corrects the position estimation, using a steering vector and the interpolated reflection coefficient that are determined based on the position of each of the transmitting a

Abstract: A sensor receives M reception signals including reflection signals reflected by a living body; extracts a living-body component transfer function matrix from first complex transfer functions and second complex transfer functions, the first complex transfer functions being obtained by recording an M×N complex transfer function matrix including complex transfer functions in time series, from M reception signals, the complex transfer functions each indicating characteristics of propagation between a corresponding one of transmission antenna elements and a corresponding one of reception antenna elements, the second complex transfer functions being obtained by estimating and recording M×N complex transfer functions in a second period, and outputting a position at which a spectrum function indicating a likelihood that a living body is present indicates a local maximum value, using a correlation matrix based on the living-body component complex transfer function matrix and a steering vector corresponding to each of

Abstract: A vertical metal oxide semiconductor field effect transistor, including a starting substrate of a first conductivity type, a second first-conductivity-type epitaxial layer provided on a first surface of the starting substrate via a first first-conductivity-type epitaxial layer, a first semiconductor region of the first conductivity type provided as a portion of the second first-conductivity-type epitaxial layer, a second-conductivity-type epitaxial layer forming a pn junction interface with the second first-conductivity-type epitaxial layer and supplying a minority carrier to the second first-conductivity-type epitaxial layer, a plurality of second semiconductor regions of the first conductivity type selectively provided in the second-conductivity-type epitaxial layer, a plurality of trenches penetrating through the second semiconductor regions and the second-conductivity-type epitaxial layer, and a plurality of gate electrodes provided in the trenches via gate insulating films.

Abstract: An array generating unit (15b) divides a sequence of acoustic features for each frame of an acoustic signal into segments of a predetermined length and generates an array in which a plurality of divided segments in a row direction are arranged in a column direction. A learning unit (15d) generates by learning, using the array, a speaker diarization model (14a) for estimating a speaker label of a speaker vector of each frame.

Abstract: A semiconductor device includes a substrate, and a stacked film provided above the substrate and including a plurality of electrode layers separated from each other in a first direction. The device further includes an array region provided on the substrate and including a memory cell array having a plurality of word lines and a plurality of select lines that constitute the plurality of electrode layers. The device further includes a first plug region provided on the substrate, located in a second direction of the array region, and including a first contact plug electrically connected to a first select line of the plurality of select lines. The device further includes a second plug region provided on the substrate, located in the second direction of the first plug region, and including a second contact plug electrically connected to a first word line of the plurality of word lines.

Abstract: A multi-layered metal sheet is disclosed formed of a laminate of a plurality of metal sheets fixed to each other by a clinch formed in a concave shape from one main surface toward another main surface, the clinch has an schematic pillar shape, the clinch being defined by an open top, a pair of cut surfaces which are respectively formed from the open top toward a bottom, a pair of inclined surfaces respectively inclined from the open top toward the bottom, transitional surfaces which connect the cut surfaces and the inclined surfaces to each other, and the bottom having overlapping parts which extend over the main surface of the multi-layered metal sheet on a lower side immediately below the cut surfaces, and lengthwise end portions of a cut formed in each of upper edge portions of the cut surfaces are disposed on upper edge portions of the transitional surfaces.

Abstract: An inhibitor for Na+-translocating V-ATPase activity including a compound represented by where R1 represents a group selected from a hydroxy group, an alkoxy group, and a haloalkoxy group, each bonded to an adjacent phenyl group via oxygen, or a group selected from a dialkylamino group, a heterocyclic amine, and a carboxylic acid amide group, each bonded to an adjacent phenyl group via nitrogen, or represents bromine, iodine, or a straight-chain hydrocarbon group. R2 represents hydrogen or a haloalkoxy group. Z1 represents an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, or a heterocyclic group, each optionally having an arbitrary substituent and having a structure containing a double bond selected from between the group and an adjacent phenyl group. The symbol * represents a bond to the adjacent phenyl group.

Abstract: A medical overtube device has a main body formed by articulating a plurality of nested units into a first group of nested units and a second group of nested units and is bendable in a longitudinal direction thereof; a first shape-fixation mechanism configured to fix a shape of the first group which has a first wire, both end of the first wire coupled to the first group of nested units and a first pulley configured to be wound by the first wire; and a second shape-fixation mechanism configured to fix a shape of the second group which has a second wire, both end of the second wire coupled to the second group of nested units; and a second pulley configured to be wound by the second wire, wherein the first shape-fixation mechanism is configured to release the fixed shape of the first group independently from the second shape-fixation mechanism.

Abstract: A medical device includes a long insertion unit; and a drive unit, wherein the nsertion unit has a first lumen, a second lumen, and a third lumen, wherein the drive unit has a first pulley and a second pulley disposed to be movable advance and retraction, a first wire wound on the first pulley, a second wire wound on the second pulley, and a pulling mechanism that is configured to pull the first pulley and the second pulley toward a proximal end side, wherein the first wire has a first end that is inserted into the first lumen and fixed to a distal end side of the insertion unit and a second end that is inserted into the second lumen and fixed to the distal end side of the insertion unit, and wherein the second wire has a first end that is inserted into the third lumen and fixed to the distal end side of the insertion unit and a second end that is fixed to the drive unit.

Abstract: A semiconductor memory device includes a first conductive layer, second conductive layers extending in a first direction and stacked above the first conductive layer in a second direction, a third conductive layer between the first conductive layer and the second conductive layers, a memory pillar extending inside the second conductive layers in the second direction, a first insulating layer that isolates the second conductive layers in a third direction, and second insulating layers spaced from an end of the first insulating layer and extending in the third direction. The second insulating layers are spaced from an extension line of the first insulating layer that extends in the first direction. The first conductive layer includes a region that overlaps in the second direction a region where extension lines of the first and second insulating layers intersect, and the third conductive layer does not overlap this intersection region in the second direction.

Abstract: A semiconductor memory device includes a first insulating layer over a semiconductor substrate, a metal layer, an adhesive layer on a first region of the metal layer, a conductive layer on a second region of the metal layer and on the adhesive layer, a second insulating layer on the conductive layer, a plurality of wiring layers that are separated from each other and are stacked above the second insulating layer, a semiconductor layer that extends in a first direction perpendicular to the semiconductor substrate and includes a bottom surface connected to the conductive layer, a storage portion disposed between at least one of the plurality of wiring layers and the semiconductor layer, and a slit that extends in the first direction, includes aside surface in contact with the plurality of wiring layers and a bottom surface reaching the conductive layer, and is filled with an insulating material.

Abstract: A surgical system includes: an overtube including a channel into which an endoscope is inserted; and an expansion device configured to ensure a surgical space by expanding an interior of a body at a distal side relative to a tip of the overtube. The expansion device includes a sheath and a wire configured to be protrudable from the sheath. The wire is configured to be switchable between a first configuration in which the wire protrudes from the sheath and a second configuration in which the wire protrudes from the sheath in a state where the wire is tilted, around a longitudinal axis, at an angle different from the first configuration.

Abstract: A multi-layered metal sheet is disclosed formed of a laminate of a plurality of metal sheets fixed to each other by a clinch formed in a concave shape from one main surface toward another main surface, the clinch has an schematic pillar shape, the clinch being defined by an open top, a pair of cut surfaces which are respectively formed from the open top toward a bottom, a pair of inclined surfaces respectively inclined from the open top toward the bottom, transitional surfaces which connect the cut surfaces and the inclined surfaces to each other, and the bottom having overlapping parts which extend over the main surface of the multi-layered metal sheet on a lower side immediately below the cut surfaces, and lengthwise end portions of a cut formed in each of upper edge portions of the cut surfaces are disposed on upper edge portions of the transitional surfaces.

Abstract: A medical device insertion method includes: inserting an endoscope into an overtube until a distal end of the endoscope protrudes from a distal end of the overtube; grasping a part of the endoscope protruding from the distal end of the overtube and inserting the endoscope into the large intestine until the distal end of the endoscope is between the splenic flexure and the sigmoid colon of the large intestine; and inserting the overtube together with the endoscope into the large intestine until the distal end of the endoscope is beyond the splenic flexure while grasping the overtube from an outer radial direction so as to deform the overtube in an inner radial direction until an inner surface of the overtube is pressed against an outer circumferential surface of the endoscope, and then inserting the overtube into the large intestine until a reinforced region is placed in the splenic flexure.

Abstract: A medical overtube device has a main body formed by articulating a plurality of nested units into a first group of nested units and a second group of nested units and is bendable in a longitudinal direction thereof; a first shape-fixation mechanism configured to fix a shape of the first group which has a first wire, both end of the first wire coupled to the first group of nested units and a first pulley configured to be wound by the first wire; and a second shape-fixation mechanism configured to fix a shape of the second group which has a second wire, both end of the second wire coupled to the second group of nested units; and a second pulley configured to be wound by the second wire, wherein the first shape-fixation mechanism is configured to release the fixed shape of the first group independently from the second shape-fixation mechanism.

Abstract: A medical device insertion method includes: inserting an endoscope into an overtube until a distal end of the endoscope protrudes from a distal end of the overtube; grasping a part of the endoscope protruding from the distal end of the overtube and inserting the endoscope into the large intestine until the distal end of the endoscope is between the splenic flexure and the sigmoid colon of the large intestine; and inserting the overtube together with the endoscope into the large intestine until the distal end of the endoscope is beyond the splenic flexure while grasping the overtube from an outer radial direction so as to deform the overtube in an inner radial direction until an inner surface of the overtube is pressed against an outer circumferential surface of the endoscope, and then inserting the overtube into the large intestine until a reinforced region is placed in the splenic flexure.

Abstract: A semiconductor memory device includes a first conductive layer, second conductive layers extending in a first direction and stacked above the first conductive layer in a second direction, a third conductive layer between the first conductive layer and the second conductive layers, a memory pillar extending inside the second conductive layers in the second direction, a first insulating layer that isolates the second conductive layers in a third direction, and second insulating layers spaced from an end of the first insulating layer and extending in the third direction. The second insulating layers are spaced from an extension line of the first insulating layer that extends in the first direction. The first conductive layer includes a region that overlaps in the second direction a region where extension lines of the first and second insulating layers intersect, and the third conductive layer does not overlap this intersection region in the second direction.

Abstract: A semiconductor memory device includes a first insulating layer over a semiconductor substrate, a metal layer, an adhesive layer on a first region of the metal layer, a conductive layer on a second region of the metal layer and on the adhesive layer, a second insulating layer on the conductive layer, a plurality of wiring layers that are separated from each other and are stacked above the second insulating layer, a semiconductor layer that extends in a first direction perpendicular to the semiconductor substrate and includes a bottom surface connected to the conductive layer, a storage portion disposed between at least one of the plurality of wiring layers and the semiconductor layer, and a slit that extends in the first direction, includes aside surface in contact with the plurality of wiring layers and a bottom surface reaching the conductive layer, and is filled with an insulating material.

Abstract: A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.

Abstract: Provided is a joint mechanism including two spur gears and; a support member that supports the two spur gears and so as to be rotatable about two joint shafts and that are disposed in a skew-lines positional relationship with a space between each other; and a rotational-force transmitting mechanism that transmits a rotational force between the spur gears and, wherein the rotational-force transmitting mechanism is provided with a transmission member formed of a rigid piece that is supported so as to be movable only in a direction parallel to a line of intersection between planes and that are respectively orthogonal to the two joint shafts and cam mechanisms or linkage mechanisms that are disposed between the transmission member and the two spur gears and, respectively, and that convert rotational motions of the spur gears and to a linear motion of the transmission member.