Abstract: The present invention relates to quinazolinone and isoquinolinone derivatives represented by formula (I) or pharmaceutically acceptable salts thereof.

Abstract: A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.

Abstract: A method for manufacturing a pressure sensor includes: preparing a stem which has a cylindrical shape with a bottom as a diaphragm; mounting a sensor chip on the diaphragm; preparing a conductive member, in which an internal connection region is integrated with an external connection region electrically connected to an external circuit by an outer frame; forming a first resin mold to couple the internal connection region to the external connection region; separating the outer frame from the internal connection region and the external connection region; arranging the internal connection region in the stem; and electrically connecting the sensor chip and the internal connection region through the first connection member.

Abstract: The present disclosure includes predicting a three-dimensional structure of one residue mutant of a membrane protein where respective amino acid residues have been substituted by all amino acids, calculating a solvation entropy change in formation of a tertiary structure from a primary structure or formation of the tertiary structure from secondary-structure units within a transmembrane segment, and extracting a candidate of an amino acid mutant to be thermostabilized based on a difference between a solvation entropy change in the membrane protein and a solvation entropy change in the amino acid mutant.

Abstract: The present invention relates to benzamide derivatives represented by formula (I) or pharmaceutically acceptable salts thereof.

Abstract: The present invention is intended to provide a compound or a pharmacologically acceptable salt thereof which has an excellent inhibitory action on the ATPase activity of a TIP48/TIP49 complex and as such, is useful for the treatment of tumors. [Solution] The present invention provides a compound having a structure represented by the general formula (I) or a pharmacologically acceptable salt thereof, and a pharmaceutical composition comprising the compound. In the formula, R1, R2, R3, R4, R5, R6, R7, and W are as defined in the present specification.

Abstract: The present invention relates to quinazolinedione derivatives represented by formula (I) or pharmaceutically acceptable salts thereof.

Abstract: An LED drive circuit that is connectable to a phase control type of light adjuster and receives a voltage based on an a.c. voltage to drive an LED load, the LED drive circuit has a structure which includes: an adjustment signal generation portion that generates an adjustment signal in accordance with a characteristic of a phase control type of light adjuster which is connected to the LED drive circuit; and an adjustment portion that receives the adjustment signal to adjust a characteristic for driving the LED load.

Abstract: The present invention relates to quinazolinone and isoquinolinone derivatives represented by formula (I) or pharmaceutically acceptable salts thereof.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises: a memory string including a plurality of memory cells connected in series; a first select gate transistor connected to one end of this memory string; and a first voltage application circuit that controls this first select gate transistor. The first select gate transistor includes a plurality of first transistors connected in series. The first voltage application circuit performs application of a voltage so as to render the plurality of first transistors in a conductive state synchronously.

Abstract: A method of manufacturing a semiconductor memory device according to an embodiment comprises: stacking a first insulating layer on a semiconductor layer, the first insulating layer being provided with a first region, a second region, and a third region that are adjacent in a first direction; stacking a charge accumulation layer formation layer; stacking a second insulating layer; and stacking a first conductive layer. The method comprises: in the second region on the semiconductor layer, removing the first insulating layer, the charge accumulation layer formation layer, the second insulating layer, and the first conductive layer to expose the semiconductor layer. Moreover, the method comprises: stacking in the second region a third insulating layer; and stacking a second conductive layer. Furthermore, the method comprises: exposing an upper surface of the semiconductor layer in the third region.

Abstract: The present invention provides a heterocyclic compound of formula (I), a pharmaceutically acceptable salt thereof, a prodrug thereof or a hydrate thereof, wherein A, A? B, D, R1, R2 and R3 are as defined herein, a pharmaceutical composition comprising a compound of formula (I) as an active ingredient, methods of production, and methods of use thereof. Particularly, the present invention provides a compound of formula (I) useful for treating or preventing a disease, condition or disorder associated with protein kinases, preferably Janus Kinase family.

Abstract: Provided is a joint mechanism including two spur gears and; a support member that supports the two spur gears and so as to be rotatable about two joint shafts and that are disposed in a skew-lines positional relationship with a space between each other; and a rotational-force transmitting mechanism that transmits a rotational force between the spur gears and, wherein the rotational-force transmitting mechanism is provided with a transmission member formed of a rigid piece that is supported so as to be movable only in a direction parallel to a line of intersection between planes and that are respectively orthogonal to the two joint shafts and cam mechanisms or linkage mechanisms that are disposed between the transmission member and the two spur gears and, respectively, and that convert rotational motions of the spur gears and to a linear motion of the transmission member.

Abstract: A method of manufacturing a semiconductor storage apparatus according to an embodiment includes forming an array of a plurality of memory cells. The method includes forming an interlayer insulating film that covers the memory cells. The method includes forming a first nitride film that covers an upper part of the interlayer insulating film. The method includes ion-implanting a first impurity into the first nitride film.

Abstract: A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.

Abstract: A cylinder head gasket includes two main members on two sides, and middle members sandwiched therebetween. The middle members are composed of a first middle member and a second middle member that is separated and distinct therefrom. The first middle member is a metal plate that has cylinder hole rim portions encircling cylinder holes to a particular width, with beads surrounding the cylinder holes being formed in the cylinder hole rim portions. The metal plate either forms separated items, one at each cylinder hole, or else forms an integrated item connected between the cylinder holes. The second middle member is a metal plate that is disposed on the outside of the first middle member and has oil holes and bolt holes. The thickness of the first middle member is greater than that of the second middle member.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor element that is formed on a semiconductor substrate, an interlayer insulating film, including a silicon oxide film, that is formed to cover the semiconductor element, a wiring layer, including a metal, that is formed in the interlayer insulating film, and a first metal silicide film that is formed between the wiring layer and the interlayer insulating film.

Abstract: An endoscope including: a distal end housing which is provided at a distal end of an endoscope insertion unit; an observation window which is provided at the distal end housing; an imaging part which is provided inside the distal end housing and configured to image an imaging target which is positioned outside the distal end housing through the observation window; an imaging part moving unit which is configured to move the imaging part with respect to the observation window and to change a range of an imaging view field of the imaging part; a cleaning unit configured to clean an outer surface of the observation window; and a synchronizing unit which is configured to synchronize a change operation of a rang of an imaging view field of the imaging part by the imaging part moving unit with a cleaning operation by the cleaning unit.

Abstract: A method for manufacturing a pressure sensor includes: preparing a stem which has a cylindrical shape with a bottom as a diaphragm; mounting a sensor chip on the diaphragm; preparing a conductive member, in which an internal connection region is integrated with an external connection region electrically connected to an external circuit by an outer frame; forming a first resin mold to couple the internal connection region to the external connection region; separating the outer frame from the internal connection region and the external connection region; arranging the internal connection region in the stem; and electrically connecting the sensor chip and the internal connection region through the first connection member.

Abstract: A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.