Patents by Inventor Takeshi Nogami

Takeshi Nogami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10804193
    Abstract: Embodiments are directed to a semiconductor structure having a dual-layer interconnect and a barrier layer. The interconnect structure combines a first conductive layer, a second conductive layer, and a barrier layer disposed between. The result is a low via resistance combined with improved electromigration performance. In one embodiment, the first conductive layer is copper, the second conductive layer is cobalt, and the barrier layer is tantalum nitride. A barrier layer is not used in other embodiments. Other embodiments are also disclosed.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: October 13, 2020
    Assignee: Tessera, Inc.
    Inventors: Benjamin D. Briggs, Takeshi Nogami, Raghuveer R. Patlolla
  • Patent number: 10770347
    Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: September 8, 2020
    Assignee: Tessera, Inc.
    Inventors: Daniel C. Edelstein, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga K. Shobha
  • Patent number: 10763166
    Abstract: An etch back air gap (EBAG) process is provided. The EBAG process includes forming an initial structure that includes a dielectric layer disposed on a substrate and a liner disposed to line a trench defined in the dielectric layer. The process further includes impregnating a metallic interconnect material with dopant materials, filling a remainder of the trench with the impregnated metallic interconnect materials to form an intermediate structure and drive-out annealing of the intermediate structure. The drive-out annealing of the intermediate structure serves to drive the dopant materials out of the impregnated metallic interconnect materials and thereby forms a chemical- and plasma-attack immune material.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: September 1, 2020
    Assignee: Tessera, Inc.
    Inventors: Benjamin D. Briggs, Elbert Huang, Takeshi Nogami, Christopher J. Penny
  • Publication number: 20200269349
    Abstract: A laser machine includes a scanner configured to irradiate a workpiece with a laser beam, a robot configured to move the scanner, a robot controller configured to control the robot, and a scanner controller configured to control the scanner so as to control an irradiation position of the laser beam. The scanner controller includes a learned model obtained through supervised learning based on training data including, as input data, drive information relating to the robot at times when the scanner is moved in advance in a plurality of directions and speeds, and as correct data, actual position data and actual posture data of the attached scanner at the times. The actual position data and the actual posture data are calculated on the basis of the drive information relating to the robot in the learned model, and a robot movement consideration/calculation unit compensates the irradiation position of the laser beam.
    Type: Application
    Filed: January 6, 2020
    Publication date: August 27, 2020
    Inventor: Takeshi NOGAMI
  • Publication number: 20200243383
    Abstract: The present invention provides interconnects with self-forming wrap-all-around graphene barrier layer. In one aspect, a method of forming an interconnect structure is provided. The method includes: patterning at least one trench in a dielectric; forming an interconnect in the at least one trench embedded in the dielectric; and forming a wrap-all-around graphene barrier surrounding the interconnect. An interconnect structure having a wrap-all-around graphene barrier is also provided.
    Type: Application
    Filed: January 30, 2019
    Publication date: July 30, 2020
    Inventors: Huai Huang, Takeshi Nogami, Alfred Grill, Benjamin D. Briggs, Nicholas A. Lanzillo, Christian Lavoie, Devika Sil, Prasad Bhosale, James Kelly
  • Patent number: 10704625
    Abstract: A brake disc for a railway vehicle is provided in which noise arising from the brake disc during high-speed rotation of a wheel is reduced by a large margin. A brake disc for a railway vehicle includes: a disc plate portion that has a sliding portion on a front face thereof; a plurality of through-holes that pass from the front face to a rear face of the disc plate portion and are arranged in alignment in the circumferential direction of the disc plate portion, the through-holes allowing bolts to pass therethrough for fastening together the disc plate portion and a wheel of the railway vehicle; and a groove provided to link a plurality of through-holes on the front face side of the disc plate portion.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: July 7, 2020
    Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Nobuo Shiraishi, Yusuke Wakabayashi, Takeshi Kurita, Takahiro Fujimoto, Hiroshi Nogami, Atsushi Sakaguchi, Takanori Kato, Yuki Ichikawa
  • Patent number: 10685879
    Abstract: A method for fabricating a semiconductor device includes forming misalignment tolerant vias each having a landing area configured to account for alignment mismatch resulting from subsequent formation of conductive structures, depositing a conductive layer over the misalignment tolerant vias, and obtaining conductive layer patterning including each of the conductive structures formed on at least a portion of a respective one of the landing areas, including subtractively patterning the conductive layer. The misalignment tolerant vias and the conductive structures imparting a semiconductor device geometry accounting for the alignment mismatch.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: June 16, 2020
    Assignee: International Business Machines Corporation
    Inventors: John C. Arnold, Ashim Dutta, Dominik Metzler, Takeshi Nogami
  • Patent number: 10668562
    Abstract: A laser machining apparatus includes a scanner head having at least two galvanometer mirrors and galvano motors, a moving means for moving the scanner head, a movement control apparatus for controlling the moving means, and a scanner control apparatus having a galvano motor control unit for controlling rotational driving angles of the galvano motors. The movement control apparatus has a rotation angle detection unit for detecting a rotation angle of the scanner head with respect to the moving direction. The scanner control apparatus has a mirror angle calculation unit for calculating, from data on the rotation angle, rotational driving angles of the mirrors so that an intersecting direction of the laser beam corresponds to a predetermined direction with respect to the moving direction. The galvano motor control unit controls the galvano motors so that the rotational driving angles calculated by the mirror angle calculation unit are set.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: June 2, 2020
    Assignee: FANUC CORPORATION
    Inventor: Takeshi Nogami
  • Patent number: 10643890
    Abstract: Compositions of matter, compounds, articles of manufacture and processes to reduce or substantially eliminate EM and/or stress migration, and/or TDDB in copper interconnects in microelectronic devices and circuits, especially a metal liner around copper interconnects comprise an ultra thin layer or layers of Mn alloys containing at least one of W and/or Co on the metal liner. This novel alloy provides EM and/or stress migration resistance, and/or TDDB resistance in these copper interconnects, comparable to thicker layers of other alloys found in substantially larger circuits and allows the miniaturization of the circuit without having to use thicker EM and/or TDDB resistant alloys previously used thereby enhancing the miniaturization, i.e., these novel alloy layers can be miniaturized along with the circuit and provide substantially the same EM and/or TDDB resistance as thicker layers of different alloy materials previously used that lose some of their EM and/or TDDB resistance when used as thinner layers.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: May 5, 2020
    Assignee: International Business Machines Corporation
    Inventors: Daniel Edelstein, Alfred Grill, Seth L. Knupp, Son Nguyen, Takeshi Nogami, Vamsi K. Paruchuri, Hosadurga K. Shobha, Chih-Chao Yang
  • Publication number: 20200114467
    Abstract: A laser machining system includes: a laser irradiation device that irradiates a workpiece with a laser beam; a workpiece moving device that moves the workpiece; a laser irradiation controller that controls the laser irradiation device to control an irradiation position of the laser beam; and a workpiece move controller that controls the workpiece moving device to control at least one of the position and the posture of the workpiece. The workpiece move controller transmits information about at least one of the position and the posture of the workpiece to the laser irradiation controller. The laser irradiation controller compensates for the irradiation position of the laser beam based on the information received from the workpiece move controller.
    Type: Application
    Filed: September 30, 2019
    Publication date: April 16, 2020
    Applicant: FANUC CORPORATION
    Inventor: Takeshi NOGAMI
  • Publication number: 20200091079
    Abstract: A semiconductor device is provided and includes first and second dielectrics, first and second conductive elements, a self-formed-barrier (SFB) and a liner. The first and second dielectrics are disposed with one of first-over-second dielectric layering and second-over-first dielectric layering. The first and second conductive elements are respectively suspended at least partially within a lower one of the first and second dielectrics and at least partially within the other one of the first and second dielectrics. The self-formed-barrier (SFB) is formed about a portion of one of the first and second conductive elements which is suspended in the second dielectric. The liner is deposited about a portion of the other one of the first and second conductive elements which is partially suspended in the first dielectric.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 19, 2020
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas A. Lanzillo, Takeshi Nogami, Christopher J. Penny, Michael Rizzolo
  • Patent number: 10593591
    Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: March 17, 2020
    Assignee: Tessera, Inc.
    Inventors: Daniel C. Edelstein, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga K. Shobha
  • Patent number: 10576583
    Abstract: A laser machining device includes a scanner head which can scan a laser beam, a movement means for the scanner head, a scanner head control device and a movement control device.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: March 3, 2020
    Assignee: FANUC CORPORATION
    Inventors: Masanobu Hatada, Takayoshi Matsumoto, Takeshi Nogami
  • Patent number: 10580740
    Abstract: Low-temperature techniques for doping of Cu interconnects based on interfacially-assisted thermal diffusion are provided. In one aspect, a method of forming doped copper interconnects includes the steps of: patterning at least one trench in a dielectric material; forming a barrier layer lining the trench; forming a metal liner on the barrier layer; depositing a seed layer on the metal liner; plating a Cu fill into the trench to form Cu interconnects; removing a portion of a Cu overburden to access an interface between the metal liner and the Cu fill; depositing a dopant layer; and diffusing a dopant(s) from the dopant layer along the interface to form a Cu interconnect doping layer between the metal liner and the Cu fill. Alternatively, the overburden and the barrier layer/metal liner can be completely removed, and the dopant layer deposited selectively on the Cu fill. An interconnect structure is also provided.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: March 3, 2020
    Assignee: International Business Machines Corporation
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Chao-Kun Hu, Takeshi Nogami, Deepika Priyadarshini, Michael Rizzolo
  • Publication number: 20200051854
    Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Inventors: Daniel C. EDELSTEIN, Son V. NGUYEN, Takeshi NOGAMI, Deepika PRIYADARSHINI, Hosadurga K. SHOBHA
  • Publication number: 20200030908
    Abstract: A controller that determines a welding condition depending on a work state includes a work state monitoring unit that monitors the work state at a welding position for future, a welding condition controlling unit that calculates a statistical value based on the work state at the welding position for future and past and determines the welding condition depending on the statistical value, and a welding unit that performs welding at a current welding position based on the welding condition. The controller enables appropriate control of welding condition switching.
    Type: Application
    Filed: July 23, 2019
    Publication date: January 30, 2020
    Applicant: Fanuc Corporation
    Inventor: Takeshi Nogami
  • Patent number: 10529663
    Abstract: Voids within metal deposited on interconnect structures are filled with cobalt or a cobalt compound to enhance electromigration performance. A reflow process to enlarge interconnect metal grain size is performed prior to filling the voids. An interconnect metal microstructure beneath the filled voids includes grain boundaries extending to the bottom portions of the voids. A coating of manganese atoms provides resistance to electromigration. Copper interconnects having fine dimensions and improved reliability are obtained.
    Type: Grant
    Filed: October 14, 2018
    Date of Patent: January 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Takeshi Nogami, Chih-Chao Yang
  • Patent number: 10446496
    Abstract: A method for forming a conductor includes forming trenches in an insulator layer. An alloy layer is deposited in the trenches. The alloy layer includes a conductor material and a barrier material. The alloy layer is annealed to form a barrier layer on the insulator layer and to purify the alloy layer into a conductor layer, such that the barrier material in the alloy layer is driven to an interface between the alloy layer and the insulator layer.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: October 15, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Takeshi Nogami, Michael Rizzolo
  • Patent number: 10431544
    Abstract: An interconnect for a semiconductor device includes an insulator layer having a trench. A barrier layer is formed on a surface of the insulator layer in the trench. An elemental cobalt conductor is formed on the barrier layer.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: October 1, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Takeshi Nogami, Michael Rizzolo
  • Patent number: 10414299
    Abstract: In a vehicle seat foldable by rotation of rotary links disposed below a seat cushion in a direction toward the seat cushion, a front end portion of the seat cushion includes a suspending portion of a cushion pad and a skin material covering the suspending portion. Contact portions of the front end portion of the seat cushion contacting the rotary links when the vehicle seat is in a folded state include a recessed portion provided at the suspending portion, and a flexible plate provided at an outer skin material downwardly extending along a front surface of the suspending portion in the skin material covering the recessed portion. The flexible plate is configured to restore the shape of the outer skin material when the rotary links are separated from the contact portions.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: September 17, 2019
    Assignee: TS Tech Co., Ltd.
    Inventors: Haruki Ikawa, Takeshi Akutsu, Hirohisa Abe, Muneyuki Nogami