Abstract: A semiconductor device includes a gate electrode, an oxide semiconductor layer having a polycrystalline structure, and a gate insulating layer between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes a source region and a drain region each containing an impurity element, a channel region between the source region and the drain region, and a first region adjacent to the channel region. The first region includes a first edge extending along a first direction travelling from the source region to the drain region. The first region has a higher electrical resistivity than each of the source region and the drain region. An etching rate of the oxide semiconductor layer is less than 3 nm/min when the oxide semiconductor layer is etched using an etching solution containing phosphoric acid as a main component at 40° C.

Abstract: A sound reproduction device includes a cabinet and a loudspeaker disposed inside the cabinet, the cabinet includes a baffle including a plurality of through holes provided in a ring-shaped area, and the loudspeaker is disposed in an orientation in which sound is emitted toward the plurality of through holes.

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.

Abstract: A motor control device includes an abnormality determination unit that determines the presence of any abnormality in a current detector. The abnormality determination unit includes, for example, a U-phase abnormality determination device. The U-phase abnormality determination device calculates, as a voltage command threshold, a value obtained by adding a dead time voltage error, which is a voltage error occurring due to a dead time, to an ideal voltage command threshold, which is a value obtained by multiplying a prescribed reference current value by a motor resistance value, and outputs a signal indicating an abnormality in the current detector when the effective value of a voltage command value is equal to or greater than the voltage command threshold and the effective value of a current detection value is equal to or less than a current detection threshold that is lower than the reference current value.

Abstract: A controller for a machine tool that moves a feed shaft moving a cutting tool and a workpiece to thereby cut the workpiece. The controller includes a command generator outputting a moving command to shift the feed shaft in a feeding direction while allowing the feed shaft to oscillate along the feeding direction, a position controller outputting a velocity command, a velocity controller outputting a torque command, a current controller controlling motor line current, and an inversion compensation calculator calculating a compensation amount compensating for a tracking delay caused by inversion of a moving direction of the feed shaft and adding the compensation amount to the moving command etc. for inversion compensation. The controller does not perform the inversion compensation unless the feeding direction is inverted, in spite of inversion of the moving direction of the feed shaft due to oscillation.

Abstract: A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: An optical waveguide device that enables a location in which an optical loss such as a propagation loss or a coupling loss occurs to be easily specified is provided. An optical waveguide device includes a substrate 1 on which an optical waveguide 2 is formed, and a grating 6 formed in a part of the optical waveguide 2 or a grating 6 connected to a monitoring optical waveguide 5 that merges with or branches from a part of the optical waveguide 2, in which inputting a light wave into the optical waveguide or outputting at least a part of the light wave propagating through the optical waveguide is performed through the grating 6.

Abstract: An acoustic device includes a first acoustic unit and a second acoustic unit. The first acoustic unit includes: a first loudspeaker module that includes a first sound emitting surface provided to face the second acoustic unit; and a first sound absorbing module that includes a first sound absorbing surface provided around the first sound emitting surface to face the second acoustic unit. The second acoustic unit includes: a second loudspeaker module that includes a second sound emitting surface provided to face the first acoustic unit; and a second sound absorbing module that includes a second sound absorbing surface provided around the second sound emitting surface to face the first acoustic unit.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: A content playback device includes: a network interface that receives the current perceived temperature information for a person in a specific area from a server via a communication network; a memory that stores the perceived temperature information and date information indicating the current date; and a central processing unit (CPU) that causes the memory to store the perceived temperature information received by the network interface, selects playback content from a plurality of pieces of content, based on the perceived temperature information and the date information, and plays back the playback content.

Abstract: A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.

Abstract: Provided are: a method of producing heated ozone water, the method capable of producing heated ozone water having an extremely high ozone concentration by suppressing a reduction in the ozone concentration in high-concentration heated ozone water; heated ozone water; and a semiconductor wafer-cleaning liquid using the heated ozone water. A method of producing heated ozone water obtained by dissolving ozone in pure water, the method being characterized by including: adjusting a pH of the pure water to 3 or less by adding acid to the pure water; to obtain an acid water, dissolving an ozone gas in the acid water; and heating the pure water, the acid water or the ozone water, to 60° C. or more.

Abstract: A display device includes a light-emitting element; a first transistor and a second transistor connected in series between the light-emitting element and a driving power line; a third transistor electrically connected to a gate electrode of the first transistor; and a fourth transistor connected in parallel between a drain electrode of the first transistor and the light-emitting element, wherein a ratio of a channel width W1 to a channel length L1 of the first transistor (a W1/L1 ratio) and a ratio of a channel width W2 to a channel length L2 of the second transistor (a W2/L2 ratio) are larger than a ratio of a channel width W3 to a channel length L3 of the third transistor (a W3/L3 ratio) and a ratio of a channel width W4 to a channel length L4 of the fourth transistor (a W4/L4 ratio).

Abstract: The semiconductor device comprises a gate electrode, a first gate insulating film overlapping a part of the side surface and the upper surface of the gate electrode, a second gate insulating film overlapping the upper surface of the gate electrode, a semiconductor film provided on the upper surface of the second gate insulating film and overlapping the gate electrode and a first terminal and a second terminal overlapping the upper surface of the semiconductor film. In a plan view, a first region is a region where the semiconductor film overlaps the upper surface of the first gate insulating film and the second gate insulating film between the first terminal and the second terminal, and a third region is a region that overlaps both a part of the upper surface of the gate electrode and the second gate insulating film and does not overlap the first gate insulating film.

Abstract: The semiconductor device includes a first gate electrode, a first gate insulating film, a semiconductor film, a first electrode, a second electrode, a second gate insulating film, and a second gate electrode. The first gate insulating film is located over the first gate electrode. The semiconductor film is located over the first gate insulating film and overlaps with the first gate electrode. The first electrode and the second electrode are each located over and in contact with the semiconductor film. The second gate insulating film is located over the first electrode and the second electrode. The second gate electrode is located over the second gate insulating film and overlaps with the second electrode and the first gate electrode. The first electrode is completely exposed from the second gate electrode.

Abstract: A sound reproduction device includes a cabinet and a loudspeaker disposed inside the cabinet, the cabinet includes a baffle including a plurality of through holes provided in a ringshaped area, and the loudspeaker is disposed in an orientation in which sound is emitted toward the plurality of through holes.

Abstract: A motor control device includes an abnormality determination unit that determines the presence of any abnormality in a current detector. The abnormality determination unit includes, for example, a U-phase abnormality determination device. The U-phase abnormality determination device calculates, as a voltage command threshold, a value obtained by adding a dead time voltage error, which is a voltage error occurring due to a dead time, to an ideal voltage command threshold, which is a value obtained by multiplying a prescribed reference current value by a motor resistance value, and outputs a signal indicating an abnormality in the current detector when the effective value of a voltage command value is equal to or greater than the voltage command threshold and the effective value of a current detection value is equal to or less than a current detection threshold that is lower than the reference current value.

Abstract: Provided is a stripping method capable of stripping a resist while suppressing the time and cost of processing required for stripping, while giving sufficient consideration to the load on the environment. The resist stripping method is a method for stripping a resist film-formed on a substrate, including: a pretreatment step of exposing the resist to a heated steam in a predetermined temperature range for a predetermined time; and a stripping step of stripping the resist exposed to the heated steam in the pretreatment step by using a resist stripping liquid, wherein the predetermined temperature range and the predetermined time are set according to the resist.

Abstract: According to one embodiment, a transistor includes a gate electrode, an oxide semiconductor layer which overlaps the gate electrode and including a central portion and an end portion, and a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein an oxidation degree of the end portion is lower than an oxidation degree of the central portion, and a length of the gate electrode overlapping the central portion is greater than a length of the gate electrode overlapping the end portion.