Abstract: A thermoelectric conversion material having a high dimensionless figure of merit ZT includes: a large number of polycrystalline grains which include a skutterudite-type crystal structure containing Yb, Co, and Sb; and an intergranular layer which is between the neighboring polycrystalline grains and includes crystals in which an atomic ratio of O to Yb is more than 0.4 and less than 1.5. A method for manufacturing a thermoelectric conversion material includes: a weighing step; a mixing step; a ribbon preparation step by rapidly cooling and solidifying a melt of the raw materials by using a rapid liquid cooling solidifying method; a first heat treatment step including heat treating in an inert atmosphere with an adjusted oxygen concentration; a second heat treatment step including heat treating in a reducing atmosphere; and manufacturing the thermoelectric conversion material by a pressure sintering step in an inert atmosphere.

Abstract: There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.

Abstract: A surveillance camera includes an imaging unit configured to output a video frame, and a control unit configured to set a search range in the video frame and to extract a tracking-target image by using a feature quantity of an image in the search range. In a case where an object image other than the tracking target is contained in the search range, the control unit masks a feature quantity of the object image and extracts the tracking-target image.

Abstract: In an example information processing system including a server and at least one apparatus capable of communicating with the server, the apparatus includes at least an application execution unit. The application execution unit executes a predetermined application. The system includes, by either one of the apparatus and the server or by a cooperation of the apparatus and the server, an execution state determination unit and a writing management unit. The execution state determination unit determines whether or not a state of the execution performed by the application execution unit has satisfied a predetermined condition. The writing management unit, when the state has satisfied the predetermined condition, permits a user of the apparatus to write in information managed by the server.

Abstract: A liquid crystalline polyester resin composition for use in camera modules includes 20 to 45 parts by weight of spherical silica particles (B) having an average particle diameter of 15 ?m or more and less than 30 ?m in 100 parts by weight of a liquid crystalline polyester resin (A). A polyamide resin composition with which a camera module exhibiting excellent low dust forming property, toughness and impact strength can be obtained.

Abstract: A surface mount inductor includes a coil including a wound portion and a feeder end portion drawn out from the wound portion, a compact that contains a magnetic powder and that encapsulates the coil, and an external terminal disposed on the compact and connected to the coil. The compact has surfaces including two pressed surfaces, opposing each other in a direction of an axis of the wound portion and formed by being pressed in the direction of the axis, and a non-pressed surface, adjacent to the two surfaces and not pressed. The coil is disposed so that the axis of the wound portion is parallel to a mount surface of the compact. The mount surface is included in the non-pressed surface, the feeder end portion is exposed from the mount surface, and the external terminal is formed on only the non-pressed surface and connected to the feeder end portion.

Abstract: A liquid crystalline polyester resin composition for use in camera modules includes 20 to 45 parts by weight of spherical silica particles (B) having an average particle diameter of 15 ?m or more and less than 30 ?m in 100 parts by weight of a liquid crystalline polyester resin (A). A polyamide resin composition with which a camera module exhibiting excellent low dust forming property, toughness and impact strength can be obtained.

Abstract: To provide a stress relaxation structure that can achieve both high thermal conductivity and high thermal stress relaxation ability and has excellent vibration durability, and a thermoelectric conversion module having such a stress relaxation structure. The stress relaxation structure includes a rolled-up body having a first thermal conductor and a second thermal conductor that are alternately rolled up. The first thermal conductor is metal foil, and the second thermal conductor is porous metal foil.

Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.

Abstract: A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.

Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.

Abstract: A semiconductor ceramic composition is represented by the formula [(Bi?—Na?)x(Ba1-yRy)1-x]TiO3 (R being at least one kind of rare earth element), in which x, y, ? and ? satisfy 0<x?0.3, 0<y?0.02, 0.46<??0.62 and 0.45???0.60, includes a molar ratio Bi/Na of Bi to Na in a sintered body of more than 1.02 but 1.20 or less. Methods for producing a semiconductor ceramic composition include weighing the molar ratio Bi/Na of Bi to Na to be 1.05 to 1.24 so an amount of Bi in a Bi raw material powder becomes larger than an amount of Na in an Na raw material powder in a (BiNa)TiO3 calcined powder or adding a Bi raw material powder to a mixed calcined powder so the molar ratio Bi/Na is 1.04 to 1.23, in order that the molar ratio Bi/Na of Bi to Na in a sintered body becomes more than 1.02 but 1.20 or less.

Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed.

Abstract: Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.

Abstract: An example computer apparatus includes a processor coupled to a memory storing a program. The processor executes the program to perform operations including displaying an application menu screen displaying at least a selectable first menu item for an uninstalled first application and a selectable second menu item for an installed second application; periodically determining availability/unavailability of the first application for download from another computer apparatus; in response to selection of the first menu item if the most recent periodic determining has determined that the first application is unavailable for download from the server, providing announcement information about the first application; and in response to selection of the first menu item if the most recent periodic determining has determined that the first application is available for download from the server, initiating a process for downloading and installing the first application.

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract: A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.

Abstract: In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.

Abstract: Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.

Abstract: Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance ? from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material; forming the same; and then sintering at a temperature of 1,300° C. to 1,450° C.