Abstract: The present invention provides an olivine-type positive electrode active material that is an inexpensive and very safe positive electrode active material that also exhibits excellent battery properties even at high energy densities. The present invention also provides a method of producing this olivine-type positive electrode active material and a nonaqueous electrolyte battery that has a positive electrode that contains this olivine-type positive electrode active material. The present invention relates to a positive electrode active material that comprises an olivine-type lithium manganese phosphate compound represented by the following general formula (1) LixMnyMaPO4??(1) (in the formula, 0<x<2, 0<y<1, 0<a<1, and M is at least one metal element selected from the group consisting of Co, Ni, Fe, Zn, Cu, Ti, Sn, Zr, V, and Al) and that has a particle diameter of 10 to 500 nm.

Abstract: The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient ?f in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3—Y(BazSr1-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient ?f can be controlled in a negative direction and the ?f can be controlled in the range of 0.80 to ?4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

Abstract: A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0<x?0.2, 0<y?0.02 and R being selected from the group consisting of La, Dy, Eu, Gd or Y is prepared by separately calcining a composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders and forming and sintering the mixed calcined powder. Similarly, a semiconductor porcelain composition [(BiNa)x(Ba1-x][Ti1-zMz]O3 with 0<x?0.2, 0<z?0.005 and M being selected from the group consisting of Nb, Ta and Sb is prepared by separately calcining a composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders, and forming and sintering the mixed calcined powders.

Abstract: An LED vehicular lamp with reflector can include a plurality of LED modules each having respective appropriate light distributions. The modules can be attached to a housing to form a light distribution characteristic though combination of the light emitted from the LED modules. At least part of the LED modules can include an illumination axis that is substantially at a right angle to the optical axis of the lamp such that light reflected at a reflector provided in the housing travels in the illumination direction of the LED light source vehicular lamp. The LED modules can also include a rear end that protrudes from an outer surface of the housing to improve the heat radiation efficiency, which enables the use of LED chips that can use higher permissible current values.

Abstract: A method of producing a semiconductor disk represented by a composition formula [(Bi0.5Na0.5)x(Ba1?yRy)1?x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0?x?0.14, and 0.002?y?0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out.

Abstract: A mobile communication system in which a mobile station copies data and transmits that copied data to a plurality of base stations, each base station sends that copied data to a serving radio network control device (S-RNC) directly or via a drift radio network control device (D-RNC), and the S-RNC selectively combines and outputs the received copied data; wherein a congestion monitoring unit monitors the congestion state of a line between the D-RNC and S-RNC, and when that line is congested, a D-RNC selectively combines the copied data that is inputted from the plurality of base stations and sends the result to that line, and when the line is not congested, the D-RNC sends the copied data that is inputted from the plurality of base stations to the line without performing selective combination.

Abstract: A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.

Abstract: It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.

Abstract: To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).

Abstract: It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same.

Abstract: The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient ?f of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant ?r is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3 solid solution as a main phase, in which a solid solution of Al—Ga—Sr-based oxide and/or a solid solution of Al—Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.

Abstract: A game apparatus functioning as an image transmitting apparatus includes a CPU. The CPU performs an edit of at least one image with a controller according to an instruction by a user, transmits image data of the image through a wireless communication module to a network during execution of the edit, and further transmits layout information indicating a layout of the image after completion of the edit.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: The present invention provides a positive electrode active material that has rate characteristics suitable for nonaqueous electrolyte batteries and particularly nonaqueous electrolyte secondary batteries, a method by which this positive electrode active material can be easily mass produced, and a high-performance nonaqueous electrolyte battery that has a positive electrode active material obtained by this method. The present invention relates to a method of producing a positive electrode active material, the method comprising a step of mixing a carbon source with lithium manganese phosphate LiMnPO4 or a compound LiMn1-xMxPO4 (where, 0?x<1 and M is at least one metal element selected from the group consisting of Co, Ni, Fe, Zn, Cu, Ti, Sn, Zr, V, and Al) containing lithium manganese phosphate LiMnPO4 as a solid solution composition, and heat treating the obtained mixture under an inert gas atmosphere.

Abstract: ABSTRACT The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient ?f in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3-Y(BazSrl-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient ?f can be controlled in a negative direction and the ?f can be controlled in the range of 0.80 to ?4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

Abstract: To provide a semiconductor ceramic composition containing no Pb in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of shifting the Curie temperate to a positive direction as well as of greatly lowering resistivity at room temperature, and a method for producing the same. BaTiO3 calcined powder and (BiNa)TiO3 calcined powder, which contain no semiconductive dopant, are prepared separately, the calcined powders are mixed, crushed, formed, and then sintered in an inert gas atmosphere having an oxygen concentration of 1% or less to obtain a semiconductor ceramic composition represented by a composition formula: [(BiNa)xBa1-x]TiO3 in which x satisfies 0<x?0.3.

Abstract: The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).

Abstract: It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein, and a BNT calcined powder containing a (BiNa)TiO3 powder.

Abstract: The invention intends to provide a single crystal material that can be used as a dielectric material for use in electronic devices, which has a high Qf value; and a process for producing the same. According to the invention, a single crystal of a composite oxide is obtained from a composition in which a slight amount of SrTiO3 is added to LaAlO3, and the (1-X)LaAlO3—XSrTiO3 single crystal material having the specific composition has such dielectric characteristics for electronic devices that the dielectric constant is 24 or more and the Qf value is 300,000 GHz or more, is considerably improved in the Qf value as a dielectric material, and can be applied to a high-temperature superconducting filter.

Abstract: It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well as of controlling room temperature resistivity and having an excellent jump characteristic. Since the semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na has a crystal in which a central part and an outer shell part of a crystal grain are different from each other in composition, the composition is capable of improving control of room temperature resistivity and a jump characteristic, and therefore it is optimum as a material for a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, and the like.