Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed.

Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed.

Abstract: The present invention provides a positive electrode active material that has rate characteristics suitable for nonaqueous electrolyte batteries and particularly nonaqueous electrolyte secondary batteries, a method by which this positive electrode active material can be easily mass produced, and a high-performance nonaqueous electrolyte battery that has a positive electrode active material obtained by this method. The present invention relates to a method of producing a positive electrode active material, the method comprising a step of mixing a carbon source with lithium manganese phosphate LiMnPO4 or a compound LiMn1-xMxPO4 (where, 0?x<1 and M is at least one metal element selected from the group consisting of Co, Ni, Fe, Zn, Cu, Ti, Sn, Zr, V, and Al) containing lithium manganese phosphate LiMnPO4 as a solid solution composition, and heat treating the obtained mixture under an inert gas atmosphere.

Abstract: The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (in which A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), in which a, x, y and z satisfy 0.90?a?1.10, 0<x?0.30, 0?y?0.050 and 0?z?0.010 and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 ?m or more and 8.0 ?m or less.

Abstract: To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material. There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.

Abstract: An example computer apparatus includes a processor coupled to a memory storing a program. The processor executes the program to perform operations including displaying an application menu screen displaying at least a selectable first menu item for an uninstalled first application and a selectable second menu item for an installed second application; periodically determining availability/unavailability of the first application for download from another computer apparatus; in response to selection of the first menu item if the most recent periodic determining has determined that the first application is unavailable for download from the server, providing announcement information about the first application; and in response to selection of the first menu item if the most recent periodic determining has determined that the first application is available for download from the server, initiating a process for downloading and installing the first application.

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract: A mobile communication system has a mobile terminal, basestations, and a Radio Network Controller (RNC). In the case where drop of a frame occurs during data communication in Iub/Iur (between the basestations and the RNC), the RNC executes retransmission of an EDCH FP frame between the RNC and the basestations by transmitting a TN frame to the basestations to repair the drop of the frame without executing retransmission with the terminal device.

Abstract: An example method of installing an application onto an apparatus involves displaying an application menu screen comprising a fixed number of menu item display locations, at least one of the menu item display locations displaying a first menu item for an non-installed application. An announcement screen is displayed in response to selection of the first menu item for the non-installed application, the announcement screen comprising a selection item configured to initiate a downloading operation for the non-installed application. The downloading operation is initiated in response to selection of the selection item. The application can be installed/non-installed separately from other applications.

Abstract: A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.

Abstract: A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.

Abstract: The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).

Abstract: A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.

Abstract: A mobile communication system in which a mobile station copies data and transmits that copied data to a plurality of base stations, each base station sends that copied data to a serving radio network control device (S-RNC) directly or via a drift radio network control device (D-RNC), and the S-RNC selectively combines and outputs the received copied data; wherein a congestion monitoring unit monitors the congestion state of a line between the D-RNC and S-RNC, and when that line is congested, a D-RNC selectively combines the copied data that is inputted from the plurality of base stations and sends the result to that line, and when the line is not congested, the D-RNC sends the copied data that is inputted from the plurality of base stations to the line without performing selective combination.

Abstract: The invention intends to provide a single crystal material that can be used as a dielectric material for use in electronic devices, which has a high Qf value; and a process for producing the same. According to the invention, a single crystal of a composite oxide is obtained from a composition in which a slight amount of SrTiO3 is added to LaAlO3, and the (1-X)LaAlO3—XSrTiO3 single crystal material having the specific composition has such dielectric characteristics for electronic devices that the dielectric constant is 24 or more and the Qf value is 300,000 GHz or more, is considerably improved in the Qf value as a dielectric material, and can be applied to a high-temperature superconducting filter.

Abstract: There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, which exhibits an excellent jump characteristic while reducing room temperature resistivity and which also reduces room temperature resistivity and exhibits small change with time. A semiconductor ceramic composition which is represented by a composition formula of [(Bi?—Na?)x(Ba1-yRy)1-x]TiO3 (where R is at least one kind of rare earth elements), in which x, y, ? and ? satisfy 0<x?0.3, 0<y?0.02, 0.46<??0.62 and 0.45???0.60 and a molar ratio Bi/Na of Bi to Na in a sintered body is more than 1.02 but 1.20 or less, is provided. Also, a method for producing a semiconductor ceramic composition containing a means for performing weighing such a manner that the molar ratio Bi/Na of Bi to Na is 1.05 to 1.

Abstract: The present invention discloses a resin composition and a prepreg produced using the resin composition. The resin composition comprises, as essential components: 100 parts by mass of a component (A) which is an epoxy resin; 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles; and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent. The thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 ?m and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 ?m at a mass ratio of 3:1 to 1:3. The average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more.

Abstract: In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.

Abstract: A game apparatus functioning as an image transmitting apparatus includes a CPU. The CPU performs an edit of at least one image with a controller according to an instruction by a user, transmits image data of the image through a wireless communication module to a network during execution of the edit, and further transmits layout information indicating a layout of the image after completion of the edit.

Abstract: It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.