Abstract: A display apparatus includes an excitation light source that outputs excitation light; a light-emitting device including a photoluminescent layer that receives the excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical shutter on an optical path of the light emitted from the photoluminescent layer. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer located on the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface. The first light has a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting apparatus includes a light-emitting device and an excitation light source. The light-emitting device includes a photoluminescent layer, a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The excitation light source emits excitation light. The light-emitting device is integrally provided with the excitation light source.

Abstract: A light-emitting device includes a photoluminescent layer, a light-transmissive layer located on the photoluminescent layer, and a multilayer mirror layered together with the photoluminescent layer and the light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure. The submicron structure has at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, a low-refractive-index layer and a high-refractive-index layer. A submicron structure is defined on the photoluminescent layer and/or the light-transmissive layer. The low-refractive-index layer is located on or near the photoluminescent layer so that the photoluminescent layer is located between the low-refractive-index layer and light-transmissive layer. The high-refractive-index layer is located on or near the low-refractive-index layer so that the low-refractive-index layer is located between the high-refractive-index layer and the photoluminescent layer.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship: ?a/nwav-a<Dint<?a where Dint is a center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: The organic electroluminescence element of the present invention includes: a first substrate; a second substrate facing the first substrate; an element member between the first and second substrates; first and second extension electrodes on first and second inner surfaces of the first and second substrates facing the element member; and an insulating member having an electrically insulating property. The element member includes: a functional layer including a light-emitting layer and having first and second surfaces in a thickness direction; and first and second electrode layers on the respective first and second surfaces of the functional layer. The element member is between the first and second extension electrodes such that parts of the first and second electrode layers are in contact with the first and second extension electrodes respectively. The insulating member is between the first and second inner surfaces of the respective first and second substrates.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/Dint(min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship: 0.8Dint(min)<?a/nwav-a where Dint(min) is the minimum center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A light-emitting device includes a photoluminescent layer emitting light in response to excitation light, a light-transmissive layer located on the photoluminescent layer, and a light guide guiding the excitation light to the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device according to an embodiment includes a photoluminescent layer, a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers a surface of the photoluminescent layer, and a light-transmissive layer that is located on the planarization layer and comprises a submicron structure. The submicron structure has projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from a light emitting surface perpendicular to the thickness direction.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The light-emitting device includes second projections on at least one of the photoluminescent layer and the light-transmissive layer, and the distance between adjacent second projections is smaller than Dint.

Abstract: A light-emitting apparatus includes a light-emitting device and an excitation light source. The light-emitting device includes a photoluminescent layer, a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The excitation light source emits excitation light. The light-emitting device is integrally provided with the excitation light source.

Abstract: A light-emitting device includes a photoluminescent layer, a light-transmissive layer located on the photoluminescent layer, and a multilayer mirror layered together with the photoluminescent layer and the light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure. The submicron structure has at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer located on the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface. The first light has a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure including at least two periodic structures. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air and second light having a wavelength ?b in air. The at least two periodic structures include a first periodic structure having a first period pa that satisfies ?a/nwav-a<pa<?a and a second periodic structure having a second period pb that satisfies ?b/nwav-b<pb<?b, where nwav-a and nwav-b denote refractive indices of the photoluminescent layer for the first light and the second light, respectively.

Abstract: An organic EL device includes: a first substrate having electrical conductivity; an organic layer formed on the first substrate; a second substrate having translucency; and an electrode layer formed on the second substrate. The electrode layer on the first substrate and the organic layer on the second substrate contact each other. The organic layer is not formed in the peripheral portion of the second substrate. In the region where the organic layer is not formed, a portion of the electrode layer is provided to extend, and the first substrate is not present to face the extended electrode layer, and the portion of the electrode layer is exposed to form an electrode portion. Thus, the electrode portion can be formed by a simple procedure in which, for example, the first substrate is removed, and the organic EL device can be efficiently manufactured.

Abstract: A display apparatus includes an excitation light source that outputs excitation light; a light-emitting device including a photoluminescent layer that receives the excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical shutter on an optical path of the light emitted from the photoluminescent layer. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.

Abstract: A photoelectric element 1 includes a first electrode, an electron transport layer supporting a photosensitizer, a hole transport layer, and a second electrode, and these components are stacked in the above order. The electron transport layer is formed of an organic compound produced by electrolytic polymerization of a precursor having, within one molecule thereof, two or more moieties each having a structure represented by the following structural formula (1). The photoelectric element 1 includes a gel layer composed of the organic compound and an electrolyte solution infiltrated into the organic compound.

Abstract: The organic electroluminescence element in accordance with the present invention includes: a light-emitting layer; a first electrode layer disposed on a first surface in a thickness direction of the light-emitting layer; a second electrode layer disposed on a second surface in the thickness direction of the light-emitting layer; and an electrically conductive layer. The light-emitting layer is configured to emit light when a predetermined voltage is applied between the first electrode layer and the second electrode layer. The second electrode layer includes an electrode part covering the second surface and an opening part formed in the electrode part to expose the second surface. The electrically conductive layer is configured to allow the light to pass therethrough, and is formed on an exposed region of the second surface exposed through the opening part in such a way as to be electrically connected to the electrode part and the light-emitting layer.

Abstract: An object of the present invention is to provide a carbon dioxide adsorption and release device, which has high adsorptivity, and also consumes low energy upon adsorption and desorption.