Abstract: A communication system includes a first communication device that configures a first wireless network together with another peripheral device or a plurality of other peripheral devices by using a first BSSID and a second communication device that configures a second wireless network together with another peripheral device or a plurality of other peripheral devices by using a second BSSID. The first communication device is configured to transmit a first frame in which a first identification value has been designated as a BSSID. The first communication device and the second communication device are configured to perform reception processing of a frame in which the first identification value has been designated as the BSSID, as a valid frame.

Abstract: An acquisition unit acquires pieces of information including information related to a vehicle, information related to the environment inside and outside the vehicle, and information related to a driver on board the vehicle. A determination unit determines priorities of the pieces of information acquired by the acquisition unit on the basis of a service or the like used by the driver among services or the likes provided using information accumulated in a server device. A selection unit selects a piece of information to be transmitted to the server device from among the pieces of information acquired by the acquisition unit on the basis of the priorities determined by the determination unit. A communication unit transmits the piece of information selected by the selection unit to the server device.

Abstract: A transport carrier includes a carrier body being able to hold a substrate that is a deposition target, by which the substrate is transported in a deposition apparatus while being held, wherein the carrier body includes magnetic chucking means which magnetically chucks a mask which shields a non-deposition region of the substrate through the substrate and holds the mask in a state in which the mask has come into contact with a film formation surface of the substrate.

Abstract: A compound represented by (Tr)n-Z is useful as a host material for delayed fluorescent materials. Tr represents a substituted or unsubstituted triphenylenyl group, and plural Tr's existing in the general formula (1) may be the same as or different from each other. Z represents a carbonyl group or a substituted or unsubstituted, n-valent aromatic hydrocarbon group. n represents an integer of 2 to 6, but when Z is a carbonyl group, n is 2.

Abstract: A coil structure for a rotary electric machine includes phase coils for magnetic flux generation. Each of the phase coils includes a plurality of first element conductors, a plurality of second element conductors, a plurality of first crossover portions, and a plurality of second crossover portions. The plurality of second element conductors are provided in a plurality of second slots among slots. The second slots are provided in a circumferential direction of a stator at a pitch of a first predetermined interval. The second slots are shifted in phase by a second predetermined interval with respect to first slots in the circumferential direction of the stator. The first predetermined interval is set to be an interval equivalent to N times a unit pitch. The second predetermined interval is set to be an interval smaller than the first predetermined interval.

Abstract: A rotary electric machine includes a three-phase coil including a first phase coil, a second phase coil, and a third phase coil for magnetic flux generation. A bridge conductor connecting an ath end and a bth end of the first phase coil, and a bridge conductor connecting the ath end and the bth end of the third phase coil are provided in a protruding shape on one side of a stator in a radial direction when viewed in a axial direction of the stator. A bridge conductor connecting the ath end and the bth end of the second phase coil is provided in a protruding shape on the other side of the stator in the radial direction when viewed in the axial direction of the stator. The bridge conductor of each coil in the three-phase coil is arranged at the same height position in the axial direction.

Abstract: A compound represented by (Tr)n-Z is useful as a host material for delayed fluorescent materials. Tr represents a substituted or unsubstituted triphenylenyl group, and plural Tr's existing in the general formula (1) may be the same as or different from each other. Z represents a carbonyl group or a substituted or unsubstituted, n-valent aromatic hydrocarbon group. n represents an integer of 2 to 6, but when Z is a carbonyl group, n is 2.

Abstract: In a stator constituting a rotary electric machine, a U-shaped first and second divided conductors are disposed at slots. The pitch of a pair of straight parts of the first divided conductor is set larger than that of a pair of straight parts of the second divided conductor. The second divided conductor is disposed on the inner side of the first divided conductor, more specifically, on the stator core side.

Abstract: In a stator constituting a rotary electric machine, a U-shaped first and second divided conductors are disposed at slots. The pitch of a pair of straight parts of the first divided conductor is set larger than that of a pair of straight parts of the second divided conductor. The second divided conductor is disposed on the inner side of the first divided conductor, more specifically, on the stator core side.

Abstract: Conductors comprising a U-phase coil, a V-phase coil and a W-phase coil are arranged in multiple slots in a stator forming a rotating electric machine. These U-phase coils, V-phase coils and W-phase coils are equipped with wave-wound parts, which have bridging parts on one end-face side of the stator core, and lap-wound parts, which are adjacent to the wave-wound parts and are formed so as to encircle the one end face and the other end face of the stator core. The wave-wound parts and the lap-wound parts are arranged so as to alternate in the winding direction of the conductors.

Abstract: A coil structure for a rotary electric machine includes phase coils for magnetic flux generation. Each of the phase coils includes a plurality of first element conductors, a plurality of second element conductors, a plurality of first crossover portions, and a plurality of second crossover portions. The plurality of second element conductors are provided in a plurality of second slots among slots. The second slots are provided in a circumferential direction of a stator at a pitch of a first predetermined interval. The second slots are shifted in phase by a second predetermined interval with respect to first slots in the circumferential direction of the stator. The first predetermined interval is set to be an interval equivalent to N times a unit pitch. The second predetermined interval is set to be an interval smaller than the first predetermined interval.

Abstract: A rotary electric machine includes a three-phase coil including a first phase coil, a second phase coil, and a third phase coil for magnetic flux generation. A bridge conductor connecting an ath end and a bth end of the first phase coil, and a bridge conductor connecting the ath end and the bth end of the third phase coil are provided in a protruding shape on one side of a stator in a radial direction when viewed in a axial direction of the stator. A bridge conductor connecting the ath end and the bth end of the second phase coil is provided in a protruding shape on the other side of the stator in the radial direction when viewed in the axial direction of the stator. The bridge conductor of each coil in the three-phase coil is arranged at the same height position in the axial direction.

Abstract: A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050° C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer. The crystallinity around the trench is sufficiently recovered.

Abstract: A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.

Abstract: A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S1) of forming a first epitaxial layer; a trench forming step (S2) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S3, S4, S5) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

Abstract: A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050° C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer.

Abstract: A semiconductor device includes a silicon substrate having a (110)-oriented surface, a PN column layer disposed on the (110)-oriented surface, a channel-forming layer disposed on the PN column layer, a plurality of source regions disposed at a surface portion of the channel-forming layer, and gate electrodes penetrate through the channel-forming layer. The PN column layer includes first columns having a first conductivity type and second columns having a second conductivity type which are alternately arranged in such a manner that the first columns contact the second columns on (111)-oriented surfaces, respectively. The gate electrodes are adjacent to the source regions, respectively, and each of the gate electrodes has side surfaces that cross the contact surfaces of the first columns and the second columns in a plane of the silicon substrate.

Abstract: A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S1) of forming a first epitaxial layer; a trench forming step (S2) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S3, S4, S5) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

Abstract: A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

Abstract: A motor stator (10) is provided with a stator core (11) having a plurality of slots (16), insulation members (12) which are disposed in the plurality of slots, and coils of a plurality of phases (13) which are respectively formed by distributed-winding wires (20) in prescribed slots of the plurality of slots disposed spaced apart at intervals of a predetermined number of slots via the insulation members. The wires are disposed within the insulation members in a condition that tensions are applied to the wires. The stator core, the insulation members and the coils are physically fixed together by the tensions of the wires.