Abstract: A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

Abstract: In accordance with the present invention, it is provided a method for producing a yeast extract with the improvement in the color and odor characteristic to yeast extract and with no modification of the useful substances such as amino acid, etc. compared with conventional yeast extract.By a simple method in accordance with the present invention, color and characteristic odor can be removed, with almost no loss of the contents of useful substances such as amino acid, etc. from the yeast extract solution produced in a conventional manner. Because the resulting yeast extract can be mixed with other materials for use, the yeast extract is applicable to various fields, for example for cosmetic products and healthy foods other than seasonings, which expectantly enlarges the applicable range of the yeast extract.