Abstract: In a state where a shoulder member is in contact with a contact surface, a pin member is brought into contact with the contact surface to specify a pin movement amount, which is a distance from an initial position of the pin member to the contact surface, and specify a shoulder displacement amount, which is a displacement amount when the shoulder member is retreated as a result of the contact of the pin member. When both a first condition that the pin movement amount is included in a first range and a second condition that the shoulder displacement amount is included in a second range are satisfied, the pin member is retreated from the contact surface by a predetermined return amount, and furthermore, origin point alignment of the pin member and the shoulder member is performed on the basis of positions of the pin member and the shoulder member.

Abstract: According to an additive composition which contains: (A) an aromatic phosphate sodium salt represented by the following Formula (1), where R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; (B) a fatty acid sodium salt; and (C) talc, and in which a mass ratio (B)/(A) of the content of the component (B) with respect to the content of the component (A) is 0.1 to 3 and a mass ratio (C)/[(A)+(B)+(C)] of the content of the component (C) with respect to a total content of the components (A), (B), and (C) is 0.2 to 0.8, for example, an additive composition which has excellent powder flowability and can impart excellent mechanical properties and excellent color tone to a molded article can be provided.

Abstract: There is provided a laminate including: a support substrate; a semiconductor substrate having a bump on a side of the support substrate; an inorganic material layer interposed between the support substrate and the semiconductor substrate and in contact with the semiconductor substrate; and an adhesive layer interposed between the support substrate and the inorganic material layer and in contact with the support substrate and the inorganic material layer, in which the laminate is used for an application in which the support substrate and the semiconductor substrate are separated from each other after processing of the semiconductor substrate in the laminate, and an adhesive force between the inorganic material layer and the adhesive layer when the support substrate and the semiconductor substrate are separated from each other is smaller than an adhesive force between the inorganic material layer and the semiconductor substrate.

Abstract: A dissimilar metal welding method includes a preparing step and a working step. In the preparing step, a pin member is moved to a second metal material while being rotated, and a tool body is driven such that the tool body is moved in a direction away from the second metal material while being rotated. In the working step, a through-hole is formed in the second metal material by the pin member, and then a distal end of the pin member is dug into the first metal material to a predetermined depth position in the first metal material.

Abstract: A dissimilar metal welding method includes a preparing step and a working step. In the preparing step, a pin member is moved to a second metal material while being rotated, and a tool body is driven such that the tool body is moved in a direction away from the second metal material while being rotated. In the working step, a through-hole is formed in the second metal material by the pin member, and then a distal end of the pin member is dug into the first metal material to a predetermined depth position in the first metal material.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L1 and L2 represents a C2 to C4 alkyl group, and L3 represents O or S) in an amount of 80 mass % or more.

Abstract: Provided are: a composition that can impart a thermoplastic resin with excellent transparency and physical properties; a thermoplastic resin composition containing the same; and a molded article thereof. The composition contains: (A) a cyclic organophosphate aluminum salt represented by Formula (1) below, wherein R1 to R4 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 9 carbon atoms and R5 represents an alkylidene group having 1 to 4 carbon atoms; (B) a sodium carboxylate; and (C) a fatty acid metal salt represented by Formula (2) below, wherein R6 represents a group which is introduced to an aliphatic organic acid having 10 to 30 carbon atoms and M1 represents lithium or potassium, wherein the following ranges are satisfied in terms of molar ratio: (C)/(B)=0.30 to 5.00, and (A)/{(B)+(C)}=0.15 to 0.70.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L1 and L2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L1 and that of the alkyl group L2 is 6 or less) in an amount of 80 mass % or more.

Abstract: A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, characterized in that the remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.

Abstract: The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.

Abstract: Provided are: a composition that can impart a thermoplastic resin with excellent transparency and physical properties; a thermoplastic resin composition containing the same; and a molded article thereof. The composition contains: (A) a cyclic organophosphate aluminum salt represented by Formula (1) below, wherein R1 to R4 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 9 carbon atoms and R5 represents an alkylidene group having 1 to 4 carbon atoms; (B) a sodium carboxylate; and (C) a fatty acid metal salt represented by Formula (2) below, wherein R6 represents a group which is introduced to an aliphatic organic acid having 10 to 30 carbon atoms and M1 represents lithium or potassium, wherein the following ranges are satisfied in terms of molar ratio:(C)/(B)=0.30 to 5.00, and (A)/{(B)+(C)}=0.15 to 0.70.

Abstract: The invention provides an adhesive composition containing an adhesive component (S) and a release component (H) formed of a polyorganosiloxane having a complex viscosity of 3,400 (Pa·S) or higher.

Abstract: A joining system (100) of the present invention is for joining a joining target (W) including first, second, and third members (W1), (W2), (W3), and includes a welder (101), a friction stir welding machine (102), and a controller (110) that: (A) causes the welder (101) to weld the second and third members (W2), (W3); (B), after (A), causes the joining target (W) to be placed at the friction stir welding machine (102) so that the first member (W1) is opposed to a distal end of a tool (10); and (C), after (B), controls a linear motion driver (7) and a rotation driver (8) so as to, while pressing the distal end of the tool (10) to the joining target (W), rotate the tool (10) around an axis, so that the softened second and third members (W2), (W3) intrude into the softened first member (W1), thus joining the joining target (W).

Abstract: Provided are: a nucleating agent capable of simultaneously improving the thermal stability and the transparency of a polyolefin resin; a polyolefin-based resin composition containing the same; and a molded article of the composition. The nucleating agent contains a compound represented by Formula (1) below where R1 to R4 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 9 carbon atoms; R5 represents an alkanediyl group having 1 to 4 carbon atoms; and M represents a hydrogen atom or a sodium atom. In this nucleating agent, the mass ratio of phosphorus atoms and sodium atoms, P/Na, is in a range of 1.200 to 1.500.

Abstract: Provided are: a nucleating agent composition, which can impart excellent crystallinity to an olefin-based resin and with which a molded article having excellent mechanical properties and transparency can be obtained; an olefin-based resin composition; a molded article of the same; and a method of producing an olefin-based resin composition. The nucleating agent composition contains a nucleating agent and an auxiliary agent.

Abstract: Provided are: a nucleating agent capable of simultaneously improving the thermal stability and the transparency of a polyolefin resin; a polyolefin-based resin composition containing the same; and a molded article of the composition. The nucleating agent contains a compound represented by Formula (1) below where R1 to R4 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 9 carbon atoms; R5 represents an alkanediyl group having 1 to 4 carbon atoms; and M represents a hydrogen atom or a sodium atom. In this nucleating agent, the mass ratio of phosphorus atoms and sodium atoms, P/Na, is in a range of 1.200 to 1.500.

Abstract: A dissimilar metal welding method includes a preparing step and a working step. In the preparing step, a pin member is moved to a second metal material while being rotated, and a tool body is driven such that the tool body is moved in a direction away from the second metal material while being rotated. In the working step, a through-hole is formed in the second metal material by the pin member, and then a distal end of the pin member is dug into the first metal material to a predetermined depth position in the first metal material.