Patents by Inventor Takuya Homme

Takuya Homme has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7897938
    Abstract: Comprising a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from said vapor deposition table; a second step of introducing said vapor deposition table having said substrate supported by said target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of said substrate, provided with said scintillator, introduced into said vapor deposition chamber.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: March 1, 2011
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Publication number: 20100163751
    Abstract: Comprising a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from said vapor deposition table; a second step of introducing said vapor deposition table having said substrate supported by said target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of said substrate, provided with said scintillator, introduced into said vapor deposition chamber.
    Type: Application
    Filed: December 17, 2009
    Publication date: July 1, 2010
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takuya HOMME, Toshio Takabayashi, Hiroto Sato
  • Patent number: 7705315
    Abstract: An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: April 27, 2010
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato, Takaharu Suzuki, Yoshio Natsume
  • Patent number: 7662427
    Abstract: An organic film vapor deposition method includes a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from the vapor deposition table; a second step of introducing the vapor deposition table having the substrate supported by the target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of the substrate, provided with the scintillator, introduced into the vapor deposition chamber.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: February 16, 2010
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Publication number: 20080272314
    Abstract: An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.
    Type: Application
    Filed: June 16, 2008
    Publication date: November 6, 2008
    Inventors: Takuya Homme, Toshio Takabayshi, Hiroto Sato, Takaharu Suzuki, Yoshio Natsume
  • Patent number: 7408177
    Abstract: An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.
    Type: Grant
    Filed: March 3, 2006
    Date of Patent: August 5, 2008
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato, Takaharu Suzuki, Yoshio Natsume
  • Patent number: 7151263
    Abstract: A solid-state imaging element 2 having a light-receiving portion where a plurality of photoelectric conversion elements 21 are arranged, and electrode pads 22 electrically connected to the photoelectric conversion elements 21 is mounted on a substrate 1 having external connection electrodes 12 and electrode pads 11 electrically connected to them. A scintillator 3 is formed on the surface of the light-receiving portion of the solid-state imaging element 2. The electrodes pads 11 and 22 are electrically connected by wiring lines 4. An electrical insulating organic film 51 tightly seals the scintillator 3 and covers the electrode pads 11 and 22 and the wiring lines 4. A metal thin film 52 is formed on the organic film 51.
    Type: Grant
    Filed: May 18, 2001
    Date of Patent: December 19, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Kazuhisa Miyaguchi, Toshio Takabayashi
  • Patent number: 7141803
    Abstract: A scintillator panel 1 uses a glass substrate 5, having heat resistance, as a base member for forming a scintillator 10. Glass substrate 5 also functions as a radiation entry window. Also, a dielectric multilayer film mirror 6 is disposed as a light-reflecting film between the scintillator 10 and the glass substrate 5. Furthermore, a light-absorbing film 7 is disposed on the radiation entry surface of glass substrate 5 and this absorbs the light that has been emitted from scintillator 10 and has passed through the dielectric multilayer film mirror 6 and the glass substrate 5. Light components that are reflected by the radiation entry surface, etc., and return to the dielectric multilayer film mirror 7 and the scintillator 10 therefore do not occur and the optical output of the scintillator panel 1 is not subject to degrading effects.
    Type: Grant
    Filed: September 11, 2001
    Date of Patent: November 28, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Takuya Homme
  • Publication number: 20060261286
    Abstract: An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.
    Type: Application
    Filed: March 3, 2006
    Publication date: November 23, 2006
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato, Takaharu Suzuki, Yoshio Natsume
  • Patent number: 7132665
    Abstract: In a scintillator panel comprising a deliquescent scintillator formed on an FOP and a polyparaxylylene film covering over the scintillator, the FOP comprises a protective film peeling prevention rough at a side wall portion thereon coming into contact with the polyparaxylylene film.
    Type: Grant
    Filed: April 7, 2003
    Date of Patent: November 7, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hiroto Sato, Takuya Homme, Toshio Takabayashi
  • Patent number: 7112801
    Abstract: The surfaces of an amorphous carbon substrate of a scintillator panel have undergone sandblasting, and an Al film 1 serving as a reflecting film is formed on one surface, and a columnar scintillator for converting incident radiation into visible light is formed on the surface of the Al film.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: September 26, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Publication number: 20060197035
    Abstract: An organic film vapor deposition method includes a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from the vapor deposition table; a second step of introducing the vapor deposition table having the substrate supported by the target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of the substrate, provided with the scintillator, introduced into the vapor deposition chamber.
    Type: Application
    Filed: March 27, 2006
    Publication date: September 7, 2006
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Patent number: 7087908
    Abstract: Scintillator panel (1) comprises a radiation transmitting substrate (5), which has heat resistance, a dielectric multilayer film mirror (6), as a light reflecting film and is formed on the radiation transmitting substrate (5), and a scintillator (10), disposed on the dielectric multilayer film mirror (6) and emits light by conversion of the radiation (30) that has been made to enter the radiation transmitting substrate (5) and has passed through the dielectric multilayer film mirror (6). Since the radiation transmitting substrate (5) has heat resistance, the dielectric multilayer film mirror (6) can be vapor deposited at a high temperature and, as a result, can be formed in a state of high reflectance. Also, unlike a metal film, the dielectric multilayer film mirror (6) will not corrode upon reacting with the scintillator (10).
    Type: Grant
    Filed: September 11, 2001
    Date of Patent: August 8, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Takuya Homme
  • Patent number: 7064335
    Abstract: A radiation image sensor comprises (1) an image sensor 1 having a plurality of light receiving elements arranged one or two dimensionally, (2) scintillator 2 having columnar structure formed on the light-receiving surface of this image sensor 1 to convert radiation into light including wavelengths that can be detected by the image sensor 1, (3) a protective film 3 formed so as to cover and adhere to the columnar structure of the scintillator 2, and (4) a radiation-transmittable reflective plate 4 that has a reflective surface 42 disposed to face the image sensor across the protective film 3.
    Type: Grant
    Filed: February 4, 2005
    Date of Patent: June 20, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takaharu Suzuki, Takuya Homme
  • Patent number: 7048967
    Abstract: An organic film vapor deposition method includes a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from the vapor deposition table; a second step of introducing the vapor deposition table having the substrate supported by the target-support element into a vapor deposition chamber of a CVD apparatus; and a third step of depositing an organic film by CVD method onto all surfaces of the substrate, provided with the scintillator, introduced into the vapor deposition chamber.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: May 23, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Patent number: 7034306
    Abstract: An Ag film as a light-reflecting film is formed on one surface of an a-C substrate of a scintillator panel. The entire surface of the Ag film is covered with an SiN film for protecting the Ag film. A scintillator having a columnar structure, which converts an incident radiation into visible light, is formed on the surface of the SiN film. The scintillator is covered with a polyparaxylylene film together with the substrate.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: April 25, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato, Takaharu Suzuki, Yoshio Natsume
  • Patent number: 7019301
    Abstract: A light-receiving device array in which a plurality of light-receiving devices are one- or two-dimensionally arranged on a substrate, a scintillator layer is deposited on the light-receiving devices and provided with columnar crystals, and an organic film is formed over the scintillator layer and there outside region of the substrate and it intrudes into gaps among the top part of the columnar crystals to cover the scintillator layer.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: March 28, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Patent number: RE39806
    Abstract: A scintillator panel (2) comprises a radiation-transparent substrate(10), aflat resin film (12) formed on the substrate (10), a reflecting film (14) formed on the flat resin film (12), a deliquescent scintillator (16) formed on the reflecting film (14), and a transparent organic film (18) covering the scintillator (16).
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: September 4, 2007
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Toshio Takabayashi, Takuya Homme, Hiroto Sato
  • Patent number: RE40291
    Abstract: Light-receiving devices are two-dimensionally arranged on a substrate, bonding pads electrically connected to the light-receiving devices in the respective rows or columns via signal lines are arranged on the outer periphery of the substrate, and a protective passivation film is disposed on the light-receiving devices and signal lines, thereby forming a light-receiving device array. On the light-receiving surface of the light-receiving device array, a scintillator made of columnar crystals of CsI is deposited. On the other hand, a resin frame formed like an elongated frame is disposed inside the bonding pads. Inside this frame, a protective film in which an inorganic film is held between organic films made of Parylene is laminated. The outer periphery of the protective film is in close contact with the resin frame with the aid of the coating resin.
    Type: Grant
    Filed: June 17, 2004
    Date of Patent: May 6, 2008
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Takuya Homme, Toshio Takabayashi, Hiroto Sato
  • Patent number: RE42281
    Abstract: A scintillator panel 1 uses a glass substrate 5, having heat resistance, as a base member for forming a scintillator 10. Glass substrate 5 also functions as a radiation entry window. Also, a dielectric multilayer film mirror 6 is disposed as a light-reflecting film between the scintillator 10 and the glass substrate 5. Furthermore, a light-absorbing film 7 is disposed on the radiation entry surface of glass substrate 5 and this absorbs the light that has been emitted from scintillator 10 and has passed through the dielectric multilayer film mirror 6 and the glass substrate 5. Light components that are reflected by the radiation entry surface, etc., and return to the dielectric multilayer film mirror 7 and the scintillator 10 therefore do not occur and the optical output of the scintillator panel 1 is not subject to degrading effects.
    Type: Grant
    Filed: September 11, 2001
    Date of Patent: April 12, 2011
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Takuya Homme