Abstract: A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and in a case of varying temperature in a temperature range of ±5° C. centered on a reference temperature in intervals of 6 minutes, and assuming observation period as ?, a wander performance fulfills a condition that an MTIE value is equal to or shorter than 6 ns in a range of 0 s<??0.1 s, the MTIE value is equal to or shorter than 27 ns in a range of 0.1 s<??1 s, the MTIE value is equal to or shorter than 250 ns in a range of 1 s<??10 s, the MTIE value is equal to or shorter than 100 ns in a range of 10 s<??1700 s, and the MTIE value is equal to or shorter than 6332 ns in a range of 100 s<??1000 s.

Abstract: A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and a frequency deviation with respect to a frequency at a time point when power supply starts is within a range of ±8 ppb at a time point when 10 seconds elapse from when the power supply starts, within a range of ±10 ppb at a time point when 20 seconds elapse from when the power supply starts, and within a range of ±10 ppb at a time point when 30 seconds elapse from when the power supply starts.

Abstract: An oscillator includes a resonator element; and a semiconductor device including an oscillation circuit which outputs an oscillation signal by oscillating the resonator element, a temperature compensation circuit which compensates for temperature characteristics of a frequency of the oscillation signal, and a first surface in which a terminal that is electrically connected to the resonator element is disposed. The semiconductor device overlaps the resonator element in a planar view. Frequency deviation of the oscillation signal, which is compensated for by the temperature compensation circuit, is greater than or equal to ?150 ppb and smaller than or equal to +150 ppb in a temperature range from ?5° C. to +85° C.

Abstract: A temperature compensated oscillator includes a resonator element, an oscillation circuit, and a temperature compensation circuit. Assuming an observation time as T, an MTIE value at 0.1 s<??1 s is 1.3 ns or less, an MTIE value at 1 s<??10 s is 1.3 ns or less, an MTIE value at 10 s<??100 s is 1.8 ns or less, an MTIE value at 100 s<??1000 s is 2.9 ns or less, a TDEV value at 0.1 s<??10 s is 47 ps or less, a TDEV value at 10 s<??100 s is 65 ps or less, and a TDEV value at 100 s<??1000 s is 94 ps or less.

Abstract: The present disclosure is directed to a method of manufacturing an oscillator. The oscillator includes a resonator element, an oscillation circuit which outputs an oscillation signal by oscillating the resonator element, and a temperature compensation circuit which compensates for temperature characteristics of a frequency of the oscillation signal in a desired temperature range. The method includes a first temperature compensation adjustment step in which the frequency is measured at multiple temperatures, and first temperature compensation data is calculated based on a relationship between temperature and the frequency.

Abstract: A temperature compensated oscillator, includes resonator, first case that includes base and lid and accommodates resonator, electronic component that includes oscillation and temperature compensation circuit, and second case that accommodates first case and electronic component, wherein electronic component is bonded to first case's base, and wherein in a case where temperature range of ±5° C. is changed with six minute cycle on basis of reference temperature, wander performance satisfies condition that MTIE value of 0 s<??0.1 s is equal to or less than 6 ns, MTIE value of 0.1 s<??1 s is equal to or less than 27 ns, MTIE value of 1 s<??10 s is equal to or less than 250 ns, MTIE value of 10 s<??100 s is equal to or less than 1700 ns, and MTIE value of 100 s<??1000 s is equal to or less than 6332 ns when observation time is set to ?.

Abstract: A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and a frequency deviation with respect to a frequency at a time point when power supply starts is within a range of ±8 ppb at a time point when 10 seconds elapse from when the power supply starts, within a range of ±10 ppb at a time point when 20 seconds elapse from when the power supply starts, and within a range of ±10 ppb at a time point when 30 seconds elapse from when the power supply starts.

Abstract: A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and in a case of varying temperature in a temperature range of ±5° C. centered on a reference temperature in intervals of 6 minutes, and assuming observation period as ?, a wander performance fulfills a condition that an MTIE value is equal to or shorter than 6 ns in a range of 0 s<??0.1 s, the MTIE value is equal to or shorter than 27 ns in a range of 0.1 s<??1 s, the MTIE value is equal to or shorter than 250 ns in a range of 1 s<??10 s, the MTIE value is equal to or shorter than 100 ns in a range of 10 s<??1700 s, and the MTIE value is equal to or shorter than 6332 ns in a range of 100 s<??1000 s.

Abstract: An oscillation module includes a SAW filter and a package adapted to house the SAW filter. One end of the SAW filter is firmly fixed to the package.

Abstract: A method of manufacturing an oscillator including a resonator element, an oscillation circuit which outputs an oscillation signal by oscillating the resonator element, a temperature compensation circuit which compensates for temperature characteristics of a frequency of the oscillation signal in a desired temperature range, includes a first temperature compensation adjustment step in which the frequency is measured at multiple temperatures, and first temperature compensation data is calculated based on a relationship between temperature and the frequency; and performing a second temperature compensation adjustment step in which, after the first temperature compensation adjustment step, the frequency that is obtained by performing temperature compensation by the temperature compensation circuit based on the first temperature compensation data is measured at multiple temperatures, and second temperature compensation data is calculated based on a relationship between temperature and the frequency.

Abstract: An oscillator includes a resonator element; and a semiconductor device including an oscillation circuit which outputs an oscillation signal by oscillating the resonator element, a temperature compensation circuit which compensates for temperature characteristics of a frequency of the oscillation signal, and a first surface in which a terminal that is electrically connected to the resonator element is disposed. The semiconductor device overlaps the resonator element in a planar view. Frequency deviation of the oscillation signal, which is compensated for by the temperature compensation circuit, is greater than or equal to ?150 ppb and smaller than or equal to +150 ppb in a temperature range from ?5° C. to +85° C.

Abstract: A temperature-compensated piezoelectric oscillator as an oscillator includes a piezoelectric resonator incorporating a resonator element, an electronic component (IC) as a circuit element having a function of driving the resonator element and a thermosensor, and a wiring board provided with a conductor film, and the piezoelectric resonator element and the electronic component (IC) are disposed side by side in an area where the conductor film is disposed.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.

Abstract: A temperature-compensated piezoelectric oscillator as an oscillator includes a piezoelectric resonator incorporating a resonator element, an electronic component (IC) as a circuit element having a function of driving the resonator element and a thermosensor, and a wiring board provided with a conductor film, and the piezoelectric resonator element and the electronic component (IC) are disposed side by side in an area where the conductor film is disposed.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.

Abstract: A temperature-compensated piezoelectric oscillator as an oscillator includes a piezoelectric resonator incorporating a resonator element, an electronic component (IC) as a circuit element having a function of driving the resonator element and a thermosensor, and a wiring board provided with a conductor film, and the piezoelectric resonator element and the electronic component (IC) are disposed side by side in an area where the conductor film is disposed.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (?1°???1°, 117°???142°, 42.79°?|?|?49.57°), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01??G??(1), where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy ? of the IDT satisfy the following expression: - 2.5 × G ? + 0.675 ? ? ? - 2.5 × G ? + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160?N?220??(19).

Abstract: A surface acoustic wave resonator includes a quartz substrate with preselected Euler angles and an IDT on the quartz substrate. The IDT includes electrode fingers and excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided between the electrode fingers. Assuming a surface acoustic wave wavelength is ?, an electrode finger film thickness is H, an inter-electrode finger groove depth is G, a line occupation rate of convex portions of the substrate between the inter-electrode finger grooves is ?g, and a line occupation rate of the electrode fingers on the convex portions is ?e, 0.0407??G+H; and ?g>?e.

Abstract: A temperature-compensated piezoelectric oscillator as an oscillator includes a piezoelectric resonator incorporating a resonator element, an electronic component (IC) as a circuit element having a function of driving the resonator element and a thermosensor, and a wiring board provided with a conductor film, and the piezoelectric resonator element and the electronic component (IC) are disposed side by side in an area where the conductor film is disposed.

Abstract: A SAW device has an IDT which is provided on the principal surface of a quartz crystal sustrate having Euler angles (?1.5°???1.5°, 117°???142°, ?) and excites a SAW in a stopband upper end mode. Inter-electrode-finger grooves 8 are recessed between the electrode fingers of the IDT. When the Euler angle ? is 42.79°?|?|?49.57°, the thickness H of the electrode fingers of the IDT is set to be within 0.055 ?m?H?0.335 ?m, preferably, 0.080 ?m?H?0.335 ?m. When the Euler angle ? is |?|?90°×n (where n=0, 1, 2, 3), and the thickness H of the electrode fingers is set to 0.05 ?m?H?0.20 ?m.