Abstract: A surface acoustic wave resonator has a quartz crystal substrate having Euler angles of (?=0°, 110°???150°, 88°???92°) and an IDT having a plurality of electrode fingers disposed on the quartz crystal substrate, and using a surface acoustic wave as an excitation wave, a plurality of grooves arranged in a propagation direction of the surface acoustic wave to form stripes is disposed on the quartz crystal substrate, and the electrode fingers are disposed one of between the grooves and inside the grooves.

Abstract: A surface acoustic wave resonator includes a quartz crystal substrate with preselected Euler angles, and an IDT that is provided on the quartz crystal substrate, that includes a plurality of electrode fingers, and that excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided in the quartz crystal substrate between the electrode fingers in a plan view. When a wavelength of the surface acoustic wave is ?, a first film thickness of the electrode finger is H, and a first depth of the inter-electrode finger groove is G, and when a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ?g, and a line occupation rate of the electrode fingers disposed on the convex portions is ?e, the following relationships are satisfied 0.0407??G+H; and ?g>?e.

Abstract: A surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 42.79°?|?|?49.57°), and an IDT provided on the quartz crystal substrate that includes a plurality of electrode fingers and excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided between the electrode fingers. If a line occupation rate of the convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ?g, and a line occupation rate of the electrode fingers disposed on the convex portions is ?e, ?g>?e and 0.59<?eff<0.73 are satisfied when an effective line occupation rate ?eff of the IDT is an arithmetic mean of the line occupation rate ?g and the line occupation rate ?e.

Abstract: A surface acoustic wave device includes: a quartz substrate with Euler angles of (?, ?, ?); and an IDT which excites a surface acoustic wave in an upper mode of a stop band; wherein, the Euler angle ? is ?60°???60°, and the Euler angle ? determines the ranges of the Euler angles ? and ?.

Abstract: A surface acoustic wave resonator which can realize favorable frequency-temperature characteristics and suppress frequency variations is provided. The surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 42.79°?|?|?49.57°), and an IDT that is provided on the quartz crystal substrate, includes a plurality of electrode fingers, and excites a stop band upper end mode surface acoustic wave, wherein inter-electrode finger grooves are provided between the electrode fingers in a plan view, and wherein if a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ?g, and a line occupation rate of the electrode fingers disposed on the convex portions is ?e, ?g>?e and 0.59<?eff<0.73 are satisfied in a case where an effective line occupation rate ?eff of the IDT is an arithmetic mean of the line occupation rate ?g and the line occupation rate ?e.

Abstract: A SAW device has an IDT which is provided on the principal surface of a quartz crystal sustrate having Euler angles (?1.5°???1.5°, 117°???42°, ?) and excites a SAW in a stopband upper end mode. Inter-electrode-finger grooves 8 are recessed between the electrode fingers of the IDT. When the Euler angle ? is 42.79°?|?|?49.57°, the thickness H of the electrode fingers of the IDT is set to be within 0.055 ?m?H?0.335 ?m, preferably, 0.080 ?m?H?0.335 ?m. When the Euler angle ? is |?|?90°×n (where n=0, 1, 2, 3), and the thickness H of the electrode fingers is set to 0.05 ?m?H?0.20 ?m.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (?1°???1°, 117°???142°, 42.79°?|?|?49.57°, which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01??G??(1), where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy ? of the IDT satisfy the following expression: - 2.5 × G ? + 0.675 ? ? ? - 2.5 × G ? + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160?N?220??(19).

Abstract: A surface acoustic wave resonator has a quartz crystal substrate having Euler angles of (?=0°, 110°???150°, 88°???92°) and an IDT having a plurality of electrode fingers disposed on the quartz crystal substrate, and using a surface acoustic wave as an excitation wave, a plurality of grooves arranged in a propagation direction of the surface acoustic wave to form stripes is disposed on the quartz crystal substrate, and the electrode fingers are disposed one of between the grooves and inside the grooves.

Abstract: A surface acoustic wave device includes: a quartz substrate with Euler angles of (?, ?, ?); and an IDT which excites a surface acoustic wave in an upper mode of a stop band; wherein, the Euler angle ? is ?60°???60°, and the Euler angle ? determines the ranges of the Euler angles ? and ?.

Abstract: An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle ? of a rotary Y cut quartz substrate is set in a range of ?64.0°<?<?49.3° in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90°±5° with respect to a crystal axis X. An electrode film thickness H/? standardized by a wavelength of the IDT electrode is 0.04<H/?<0.12, where ? is a wavelength of the surface acoustic wave to be excited, and a main surface of the piezoelectric substrate is etched by a thickness of 0.002 ?m or more.

Abstract: An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle ? of a rotary Y cut quartz substrate is set in a range of ?64.0°<?<?49.3° in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90°±5° with respect to a crystal axis X. An electrode film thickness H/? standardized by a wavelength of the IDT electrode is 0.04<H/?<0.12, where ? is a wavelength of the surface acoustic wave to be excited, and a main surface of the piezoelectric substrate is etched by a thickness of 0.002 ?m or more.

Abstract: An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle ? of a rotary Y cut quartz substrate is set in a range of ?64.0°<?<?49.3° in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90°±5° with respect to a crystal axis X. An electrode film thickness H/? standardized by a wavelength of the IDT electrode is 0.04<H/?<0.12, where ? is a wavelength of the surface acoustic wave to be excited, and a main surface of the piezoelectric substrate is etched by a thickness of 0.002 ?m or more.

Abstract: [Problem] In a SAW device using a SH-wave type surface acoustic wave, obtain a means to improve the Q factor. [Means to Solve the Problem] A surface acoustic wave (SAW) device includes a rotated Y-cut quartz crystal substrate where a cut angle “?” is set in ?64.0°<?<?49.3° with a crystalline Z-axis, an interdigital transducer (IDT) electrode formed on the quartz crystal substrate along a perpendicular direction to a crystalline Z-axis (a Z?-axis direction) of the quartz crystal substrate and grating reflectors disposed at both sides of the IDT, wherein a normalized electrode film thickness “H/?” which is a film thickness “H” of the IDT electrode normalized by an electrode period “?” of the IDT electrode is 0.04?H/??0.12, and a normalized crossing width “W/?” which is a crossing width “W” of the IDT electrode normalized by the electrode period “?” is set in the range of 20?W/??50.

Abstract: [Problem] In a SAW device using a quartz crystal substrate, prevent the deterioration of Q factor due to the difference in the peak frequency between the radiation conductance of an IDT and the reflection coefficient of a reflector. [Means to Solve the Problem] A surface acoustic wave (SAW) device includes a piezoelectric substrate made of a quartz crystal flat plate where a cut angle of a rotated Y-cut quartz substrate is set in ?64.0°<?<?49.3° with a crystalline Z axis and a propagation direction of the surface acoustic wave is set at 90°±5° with a crystalline X axis, an interdigital transducer (IDT) formed on the piezoelectric substrate and reflectors disposed at both sides of the IDT, wherein an exciting wave is SH wave, an electrode film thickness “H/?” normalized by a wavelength of the IDT is 0.05?H/??0.07 where “?” is a wavelength of the exciting SAW, and a ratio of an electrode pitch between the IDT and the reflector “Lt/Lr” is set to satisfy the following formula: 31.50×(H/?)2?4.

Abstract: An objective is to provide an SH wave type SAW device which is a surface acoustic wave device using a quartz substrate and which is small in size and has a large Q value and excellent frequency aging characteristics. An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle ? of a rotary Y cut quartz substrate is set in a range of ?64.0°<?<?49.3° in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90°±5° with respect to a crystal axis X. In the SH wave type surface acoustic wave device, an electrode film thickness H/? standardized by a wavelength of the IDT electrode is 0.04<H/?<0.

Abstract: [Problem] In a SAW device using a SH-wave type surface acoustic wave, obtain a means to improve the Q factor. [Means to Solve the Problem] A surface acoustic wave (SAW) device includes a rotated Y-cut quartz crystal substrate where a cut angle “?” is set in ?64.0°<?<?49.3° with a crystalline Z-axis, an interdigital transducer (IDT) electrode formed on the quartz crystal substrate along a perpendicular direction to a crystalline Z-axis (a Z?-axis direction) of the quartz crystal substrate and grating reflectors disposed at both sides of the IDT, wherein a normalized electrode film thickness “H/?” which is a film thickness “H” of the IDT electrode normalized by an electrode period “?” of the IDT electrode is 0.04?H/??0.12, and a normalized crossing width “W/?” which is a crossing width “W” of the IDT electrode normalized by the electrode period “?” is set in the range of 20?W/??50.

Abstract: [Problem] In a SAW device using a quartz crystal substrate, prevent the deterioration of Q factor due to the difference in the peak frequency between the radiation conductance of an IDT and the reflection coefficient of a reflector. [Means to Solve the Problem] A surface acoustic wave (SAW) device includes a piezoelectric substrate made of a quartz crystal flat plate where a cut angle of a rotated Y-cut quartz substrate is set in ?64.0°<?<?49.3° with a crystalline Z axis and a propagation direction of the surface acoustic wave is set at 90°±5° with a crystalline X axis, an interdigital transducer (IDT) formed on the piezoelectric substrate and reflectors disposed at both sides of the IDT, wherein an exciting wave is SH wave, an electrode film thickness “H/?” normalized by a wavelength of the IDT is 0.05?H/??0.07 where “?” is a wavelength of the exciting SAW, and a ratio of an electrode pitch between the IDT and the reflector “Lt/Lr” is set to satisfy the following formula: 31.50×(H/?)2?4.435×(H/?)+1.

Abstract: A surface acoustic wave device has a piezoelectric substrate and an IDT formed on the piezoelectric substrate, and uses an excited wave as an SH wave. The piezoelectric substrate is a quartz plate in which a cut angle ? of a rotated Y-cut quartz substrate is set in the range of ?65°????51° in a counter-clockwise direction from a crystal Z-axis and the propagation direction of a surface acoustic wave is set in the range (90°±5°) with respect to a crystal X-axis. The IDT is made of Ta or an alloyed metal containing Ta as the main component.

Abstract: A surface acoustic wave device is provided. The surface acoustic wave device includes a piezoelectric substrate and an IDT which is disposed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component and using an SH wave as an excitation wave, wherein the piezoelectric substrate is a rotated Y-cut quartz plate having a cut angle ? set to a range of ?64.0°<?<?49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°±5° with respect to an X crystalline axis, wherein, when a wavelength of an excited surface acoustic wave is denoted by ?, an electrode film thickness H/? normalized with wavelength of the IDT is set to a range of 0.04<H/?<0.12, and wherein, when a line occupancy rate mr of electrode fingers constituting the IDT is defined to be electrode finger width/(electrode finger width+electrode finger spacing), the line occupancy rate mr is set to a range of 0.53?mr?0.65.

Abstract: A surface acoustic wave device is provided. The surface acoustic wave device includes a piezoelectric substrate and an IDT which is disposed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component and using an SH wave as an excitation wave, wherein the piezoelectric substrate is a rotated Y-cut quartz plate having a cut angle ? set to a range of ?64.0<?<?49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°±5° with respect to an X crystalline axis, wherein, when a wavelength of an excited surface acoustic wave is denoted by ?, an electrode film thickness H/? normalized with wavelength of the IDT is set to a range of 0.04<H/?<0.12, and wherein, when a line occupancy rate mr of electrode fingers constituting the IDT is defined to be electrode finger width/(electrode finger width+electrode finger spacing), the line occupancy rate mr is set to a range of 0.53?mr?0.65.