Abstract: An electronic component includes a package having a cavity formed therein by providing an annular protrusion on a substrate as well as having a metallized layer on a bottom surface of the cavity, and an element disposed on the bottom surface of the cavity via the metallized layer and housed in the cavity, wherein the element has an electrode formed on a surface opposite to a surface which touches the bottom surface of the cavity when the element is disposed on the bottom surface, wherein, in the cavity, an internal electrode to be an electrical connecting destination of the electrode on the element is formed at opposed positions with the element between the positions in a first direction, in which the electrode lies between the positions when seen from the top, in such a manner that there is clearance between the internal electrode and the element, and wherein, on the bottom surface of the cavity, an distinction mark, which is distinguished from the metallized layer, is formed at opposed positions with the el

Abstract: A surface acoustic wave device is provided. The surface acoustic wave device includes a piezoelectric substrate and an IDT which is disposed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component and using an SH wave as an excitation wave, wherein the piezoelectric substrate is a rotated Y-cut quartz plate having a cut angle ? set to a range of ?64.0°<?<?49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°±5° with respect to an X crystalline axis, wherein, when a wavelength of an excited surface acoustic wave is denoted by ?, an electrode film thickness H/? normalized with wavelength of the IDT is set to a range of 0.04<H/?<0.12, and wherein, when a line occupancy rate mr of electrode fingers constituting the IDT is defined to be electrode finger width/(electrode finger width+electrode finger spacing), the line occupancy rate mr is set to a range of 0.53?mr?0.65.

Abstract: A surface acoustic wave device has a piezoelectric substrate and an IDT formed on the piezoelectric substrate, and uses an excited wave as an SH wave. The piezoelectric substrate is a quartz plate in which a cut angle ? of a rotated Y-cut quartz substrate is set in the range of ?65°????51° in a counter-clockwise direction from a crystal Z-axis and the propagation direction of a surface acoustic wave is set in the range (90°±5°) with respect to a crystal X-axis. The IDT is made of Ta or an alloyed metal containing Ta as the main component.