Patents by Inventor Tanay Karnik

Tanay Karnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190013063
    Abstract: One embodiment provides an apparatus. The apparatus includes a pair of nonvolatile resistive random access memory (RRAM) memory cells coupled to a volatile static RAM (SRAM) memory cell. The pair of nonvolatile RRAM memory cells includes a first RRAM memory cell and a second RRAM memory cell. The first RRAM memory cell includes a first resistive memory element coupled to a first bit line, and a first selector transistor coupled between the first resistive memory element and a first output node of the volatile SRAM memory cell. The second RRAM memory cell includes a second resistive memory element coupled to a second bit line, and a second selector transistor coupled between the second resistive memory element and a second output node of the volatile SRAM memory cell.
    Type: Application
    Filed: March 23, 2016
    Publication date: January 10, 2019
    Applicant: Intel Corporation
    Inventors: Huichu LIU, Sasikanth MANIPATRUNI, Daniel H. MORRIS, Kaushik VAIDYANATHAN, Niloy MUKHERJEE, Dmitri E. NIKONOV, Ian YOUNG, Tanay KARNIK
  • Publication number: 20180285268
    Abstract: In one embodiment, a processor comprises a processing core, a last level cache (LLC), and a mid-level cache. The mid-level cache is to determine that an idle indicator has been set, wherein the idle indicator is set based on an amount of activity at the LLC, and based on the determination that the idle indicator has been set, identify a first cache line to be evicted from a first set of cache lines of the mid-level cache and send a request to write the first cache line to the LLC.
    Type: Application
    Filed: March 31, 2017
    Publication date: October 4, 2018
    Applicant: Intel Corporation
    Inventors: Kunal Kishore Korgaonkar, Ishwar S. Bhati, Huichu Liu, Jayesh Gaur, Sasikanth Manipatruni, Sreenivas Subramoney, Tanay Karnik, Hong Wang, Ian A. Young
  • Publication number: 20180267591
    Abstract: The present disclosure provides for the management of power of a NZE IoT device. Managing power can include receiving the one or more asynchronous events from the asynchronous event system, determining if any of the one or more asynchronous events meet a respective charge qualification, generating the power-on command for the power-managed compute system if any of the one or more asynchronous events meet the respective charge qualification, and waiting for a power source to reach a threshold associated with the respective charge qualification if any of the one or more asynchronous events do not meet the respective charge qualification.
    Type: Application
    Filed: March 17, 2017
    Publication date: September 20, 2018
    Applicant: INTEL CORPORATION
    Inventors: Dileep Kurian, Tanay Karnik, David Arditti Ilitzky, Ankit Gupta, Sriram Kabisthalam Muthukumar, Vaibhav Vaidya, Suhwan Kim, Christopher Schaef, Ilya Klochkov
  • Publication number: 20180232311
    Abstract: A processor includes a processing core and a cache controller including a read queue and a separate write queue. The read queue is to buffer read requests of the processing core to a non-volatile memory, last level cache (NVM-LLC), and the write queue is to buffer write requests to the NVM-LLC. The cache controller is to detect whether the write queue is full. The cache controller further prioritizes a first order of sending requests to the NVM-LLC when the write queue contains an empty slot, the first order specifying a first pattern of sending the read requests before the write requests, and prioritizes a second order of sending requests to the NVM-LLC in response to a determination that the write queue is full, the second order specifying a second pattern of alternating between sending a write request from the write queue and a read request from the read queue.
    Type: Application
    Filed: February 13, 2017
    Publication date: August 16, 2018
    Inventors: Ishwar S. Bhati, Huichu Liu, Jayesh Gaur, Kunal Korgaonkar, Sasikanth Manipatruni, Sreenivas Subramoney, Tanay Karnik, Hong Wang, Ian A. Young
  • Patent number: 10024916
    Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: July 17, 2018
    Assignee: INTEL CORPORATION
    Inventors: Keith A. Bowman, James W. Tschanz, Nam Sung Kim, Janice C. Lee, Christopher B. Wilkerson, Shih-Lien L. Lu, Tanay Karnik, Vivek K. De
  • Patent number: 9842241
    Abstract: An embodiment includes an ultrasonic sensor system comprising: a backend material stack including a first metal layer between a substrate and a second metal layer with each of the first and second metal layers including a dielectric material; a ultrasonic sensor including a chamber, having a negative air pressure, that is sealed by first and second electrodes coupled to each other with first and second sidewalls; an interconnect, not included in the sensor, in the second metal layer; wherein (a) a first vertical axis intersects the substrate, the chamber, and the first and second electrodes, (b) a second vertical axis intersects the interconnect and the substrate, (c) a first horizontal axis intersects the chamber, the interconnect, and the first and second sidewalls, and (d) the first and second electrodes and the first and second sidewalls each include copper and each are included in the second metal layer.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: December 12, 2017
    Assignee: Intel Corporation
    Inventors: Mondira D. Pant, Mohamed A. Abdelmoneum, Tanay Karnik
  • Publication number: 20170345496
    Abstract: An apparatus is provided which comprises: a select line; a select transistor coupled to a resistive memory element and to the select line; a word-line coupled to a gate terminal of the select transistor; and a current mirror operable to be coupled to the select line during a first mode and to be de-coupled during a second mode.
    Type: Application
    Filed: May 25, 2016
    Publication date: November 30, 2017
    Inventors: Huichu LIU, Daniel H. MORRIS, Sasikanth MANIPATRUNI, Kaushik VAIDYANATHAN, Ian A. YOUNG, Tanay KARNIK
  • Publication number: 20170287781
    Abstract: Techniques and mechanisms for providing electrical insulation of a through-substrate interconnect (TI). In an embodiment, the TI extends between a first side of the substrate and a second side of the substrate opposite the first side. The substrate has formed therein a conductive shell structure that extends at least partially around a periphery of the TI. A first dielectric liner structure is disposed between the conductive shell structure and a bulk material of the substrate. A second dielectric liner structure is disposed between the conductive shell structure and the TI. In another embodiment, a voltage of the conductive shell structure is allowed to float while the TI exchanges a signal or a supply voltage.
    Type: Application
    Filed: March 30, 2016
    Publication date: October 5, 2017
    Inventors: Tanay Karnik, William Wahby
  • Publication number: 20170287555
    Abstract: An apparatus is described that includes a resistive random access memory cell having a word line that is to receive a narrowed word line signal that limits an amount of time that an access transistor is on so as to limit the cell's high resistive state and/or the cell's low resistive state. Another apparatus is described that includes a resistive random access memory cell having SL and BL lines that are to receive respective signals having different voltage amplitudes to reduce source degeneration effects of the resistive random access memory cell's access transistor. Another apparatus is described that includes a resistive random access memory cell having a storage cell comprising a bottom-side OEL layer. Another apparatus is described that includes a resistive random access memory cell having a storage cell within a metal layer that resides between a pair of other metal layers where parallel SL and BL lines of the resistive random access memory cell respectively reside.
    Type: Application
    Filed: March 31, 2016
    Publication date: October 5, 2017
    Inventors: HUICHU LIU, SASIKANTH MANIPATRUNI, IAN A. YOUNG, TANAY KARNIK, DANIEL H. MORRIS, KAUSHIK VAIDYANATHAN
  • Publication number: 20170177917
    Abstract: An embodiment includes an ultrasonic sensor system comprising: a backend material stack including a first metal layer between a substrate and a second metal layer with each of the first and second metal layers including a dielectric material; a ultrasonic sensor including a chamber, having a negative air pressure, that is sealed by first and second electrodes coupled to each other with first and second sidewalls; an interconnect, not included in the sensor, in the second metal layer; wherein (a) a first vertical axis intersects the substrate, the chamber, and the first and second electrodes, (b) a second vertical axis intersects the interconnect and the substrate, (c) a first horizontal axis intersects the chamber, the interconnect, and the first and second sidewalls, and (d) the first and second electrodes and the first and second sidewalls each include copper and each are included in the second metal layer.
    Type: Application
    Filed: December 21, 2015
    Publication date: June 22, 2017
    Inventors: Mondira D. Pant, Mohamed A. Abdelmoneum, Tanay Karnik
  • Publication number: 20170139006
    Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
    Type: Application
    Filed: February 1, 2017
    Publication date: May 18, 2017
    Inventors: Keith A. Bowman, James W. Tschanz, Nam Sung Kim, Janice C. Lee, Christopher B. Wilkerson, Shih-Lien L. Lu, Tanay Karnik, Vivek K. De
  • Patent number: 9594625
    Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: March 14, 2017
    Assignee: Intel Corporation
    Inventors: Keith A. Bowman, James W. Tschanz, Nam Sung Kim, Janice C. Lee, Christopher B. Wilkerson, Shih-Lien L. Lu, Tanay Karnik, Vivek K. De
  • Publication number: 20160278664
    Abstract: A mechanism is described for facilitate dynamic and seamless breath testing at computing devices according to one embodiment. A method of embodiments, as described herein, includes detecting air exhaled by a user into a first computing device, where the air includes breath associated with the user. The method may further include sensing the breath in the air, obtaining a sample of the breath, and evaluating the sample, and generating a message based on the evaluation of the sample. The method may further include presenting, via one or more output components, the message to the user via a user interface, where the message includes results of the evaluation of the breath sample.
    Type: Application
    Filed: March 27, 2015
    Publication date: September 29, 2016
    Applicant: INTEL CORPORATION
    Inventors: MONDIRA D. PANT, MEGGIE HAKIM, YOUSSRY BOTROS, TANAY KARNIK
  • Publication number: 20160170456
    Abstract: An integrated circuit (IC) package is disclosed. The IC package includes a first die; and a second die bonded to the CPU die in a three dimensional packaging layout.
    Type: Application
    Filed: September 25, 2012
    Publication date: June 16, 2016
    Applicant: INTEL CORPORATION
    Inventors: Siva G. Narendra, James W. Tschanz, Howard A. Wilson, Donald S. Gardner, Peter Hazucha, Gerhard Schrom, Tanay Karnik, Nitin Borkar, Vivek K. De, Shekhar Y. Borkar
  • Publication number: 20160034338
    Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
    Type: Application
    Filed: October 8, 2015
    Publication date: February 4, 2016
    Inventors: Keith A. Bowman, James W. Tschanz, Nam Sung Kim, Janice C. Lee, Christopher B. Wilkerson, Shih-Lien L. Lu, Tanay Karnik, Vivek K. De
  • Patent number: 9189014
    Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: November 17, 2015
    Assignee: Intel Corporation
    Inventors: Keith A. Bowman, James W. Tschanz, Nam Sung Kim, Janice C. Lee, Christopher B. Wilkerson, Shih-Lien L. Lu, Tanay Karnik, Vivek K. De
  • Patent number: 9124174
    Abstract: A method is described comprising conducting a first current through a switching transistor. The method also comprises conducting a second current through a pair of transistors whose conductive channels are coupled in series with respect to each other and are together coupled in parallel across the switching transistor's conductive channel. The second current is less than and proportional to the first current.
    Type: Grant
    Filed: June 10, 2013
    Date of Patent: September 1, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Gerhard Schrom, Peter Hazucha, Vivek K. De, Tanay Karnik
  • Patent number: 8994344
    Abstract: A multiphase DC-DC converter is provided that includes a multiphase transformer, the multiphase transformer including a plurality of input voltage terminals and an transformer output voltage terminal, each input voltage terminal associated with a corresponding phase. Each phase is assigned to an input voltage terminal of the plurality of input voltage terminals to minimize a ripple current at the input voltage terminals of the multiphase transformer.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: March 31, 2015
    Assignee: Intel Corporation
    Inventors: Gerhard Schrom, Peter Hazucha, Jaeseo Lee, Tanay Karnik, Vivek K. De, Fabrice Paillet
  • Publication number: 20150082890
    Abstract: Methods and systems may provide for a system having a flexible substrate, an ultrasonic transducer array coupled to the flexible substrate and a processor coupled to the ultrasonic transducer array. The processor may identify a fingerprint based on a signal from the ultrasonic transducer array. The system may also include an external component having a curved profile, wherein the ultrasonic transducer array is embedded in the external component and includes a read surface that conforms to the curved profile. In one example, the external component includes a button having a function that is separate from identification of the fingerprint.
    Type: Application
    Filed: September 26, 2013
    Publication date: March 26, 2015
    Inventors: Mondira D. PANT, Mohamed A. ABDELMONEUM, Tanay KARNIK, Stephen PISENTI, David I. POISNER, Rashed MAHAMEED
  • Patent number: 8868836
    Abstract: Methods and apparatus to reduce minimum operating voltage through a hybrid cache design are described. In one embodiment, a cache with different size bit cells may be used, e.g., to reduce minimum operating voltage of an integrated circuit device that includes the cache and possibly other logic (such as a processor). Other embodiments are also described.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: October 21, 2014
    Assignee: Intel Corporation
    Inventors: Muhammad M. Khellah, Christopher Wilkerson, Alaa R. Alameldeen, Bibiche M. Geuskens, Tanay Karnik, Vivek De, Gunjan H. Pandya