Abstract: In one implementation, a method of generating a plane hypothesis is performed by a device including one or more processors, non-transitory memory, and a scene camera. The method includes obtaining an image of a scene including a plurality of pixels. The method includes obtaining a plurality of points of a point cloud based on the image of the scene. The method includes obtaining an object classification set based on the image of the scene. Each element of the object classification set includes a plurality of pixels respectively associated with a corresponding object in the scene. The method includes detecting a plane within the scene by identifying a subset of the plurality of points of the point cloud that correspond to a particular element of the object classification set.

Abstract: In described examples, a digital-to-analog converter (DAC) includes an output, a ground, a reference voltage terminal, an input code terminal, multiple switches, multiple resistors, and a controller. The switches couple to the reference voltage terminal when activated and to the ground when deactivated. The resistors are variously coupled between corresponding ones of the switches and the output, so that activating the switches causes the DAC to output an output voltage. The controller is coupled to the input code terminal and coupled to control the switches. The controller generates an output code based on an input code in response to at least one differential nonlinearity error greater than one least significant bit voltage. The input code corresponds to a first ideal output voltage, the output code corresponds to a second, different ideal output voltage. The controller generates an output voltage by controlling the switches using the output code.

Abstract: The disclosure provides an approach for decentralizing control plane operations in a network environment that includes transport nodes configured to implement a logical overlay network. A method includes transmitting a global list of transport nodes to each of the plurality of transport nodes from a management plane, the global list including an ordered list of the plurality of transport nodes. The method also includes transmitting a neighbor index value to each of the plurality of transport nodes, where the transport nodes each compute a corresponding list of neighbor transport nodes based on the neighbor index value and the global list of transport nodes. The method also includes, based on determining an update to a state of the logical overlay network has occurred by a first transport node, transmitting an update message from the first transport node to each transport node in the first transport node's list of neighbor transport nodes.

Abstract: The disclosure provides an approach for decentralizing control plane operations in a network environment that includes transport nodes configured to implement a logical overlay network. A method includes transmitting a global list of transport nodes to each of the plurality of transport nodes from a management plane, the global list including an ordered list of the plurality of transport nodes. The method also includes transmitting a neighbor index value to each of the plurality of transport nodes, where the transport nodes each compute a corresponding list of neighbor transport nodes based on the neighbor index value and the global list of transport nodes. The method also includes, based on determining an update to a state of the logical overlay network has occurred by a first transport node, transmitting an update message from the first transport node to each transport node in the first transport node's list of neighbor transport nodes.

Abstract: The disclosure provides an approach for decentralizing control plane operations in a network environment that includes transport nodes configured to implement a logical overlay network. A method includes transmitting a global list of transport nodes to each of the plurality of transport nodes from a management plane, the global list including an ordered list of the plurality of transport nodes. The method also includes transmitting a neighbor index value to each of the plurality of transport nodes, where the transport nodes each compute a corresponding list of neighbor transport nodes based on the neighbor index value and the global list of transport nodes. The method also includes, based on determining an update to a state of the logical overlay network has occurred by a first transport node, transmitting an update message from the first transport node to each transport node in the first transport node's list of neighbor transport nodes.

Abstract: The disclosure provides an approach for decentralizing control plane operations in a network environment that includes transport nodes configured to implement a logical overlay network. A method includes transmitting a global list of transport nodes to each of the plurality of transport nodes from a management plane, the global list including an ordered list of the plurality of transport nodes. The method also includes transmitting a neighbor index value to each of the plurality of transport nodes, where the transport nodes each compute a corresponding list of neighbor transport nodes based on the neighbor index value and the global list of transport nodes. The method also includes, based on determining an update to a state of the logical overlay network has occurred by a first transport node, transmitting an update message from the first transport node to each transport node in the first transport node's list of neighbor transport nodes.

Abstract: Various embodiments disclosed herein provide for a neuromorphic logic system, comprising a bitline and a set of wordlines. The neuromorphic logic system also includes a set of resistive switching memory cells, respectively comprising a two-terminal volatile switching device and a two-terminal non-volatile memory device, at each intersection between the bit line and the set of wordlines, wherein the set of resistive switching memory cells are programmed to a set of resistive states and receive a voltage on the bitline above an activation threshold and wherein the magnitude of the voltage applied to the bitline corresponds to a magnitude of a sensory input, resulting in a current that corresponds to the magnitude of the sensor input and the set of resistive states.

Abstract: Systems and methods for reducing leakage currents through unselected memory cells of a memory array including setting an adjustable resistance bit line structure connected to the unselected memory cells into a high resistance state or a non-conducting state during a memory operation are described. The adjustable resistance bit line structure may comprise a bit line structure in which the resistance of an intrinsic (or near intrinsic) polysilicon portion of the bit line structure may be adjusted via an application of a voltage to a select gate portion of the bit line structure that is electrically isolated from the intrinsic polysilicon portion (e.g., via an oxide layer between the intrinsic polysilicon portion and the select gate portion). The memory cells may comprise a first conductive metal oxide (e.g., titanium oxide) that abuts a second conductive metal oxide (e.g., aluminum oxide) that abuts a layer of amorphous silicon.

Abstract: A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and conductive oxide material layer, forming a first barrier material layer between the word line and the nonvolatile memory material, forming a second barrier material layer between the bit line and the nonvolatile memory material, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line includes a first portion and a second portion including an electrically conductive carbon-containing material. The nonvolatile memory material includes a semiconductor material layer and a conductive oxide material layer, with the semiconductor material layer disposed adjacent the second portion of the word line.

Abstract: Systems and methods for providing a Barrier Modulated Cell (BMC) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The BMC structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (TiO2), strontium titanate (SrTiO3), or a binary metal oxide. The BMC structure may include a conductive metal oxide in series with an amorphous layer of a low bandgap material. The low bandgap material may comprise a semiconductor material with a bandgap energy (Eg) less than 1.0 eV. The improved BMC structure may be used for providing multi-level memory elements within a three dimensional memory array.

Abstract: Systems and methods for reducing leakage currents through unselected memory cells of a memory array including setting an adjustable resistance bit line structure connected to the unselected memory cells into a high resistance state or a non-conducting state during a memory operation are described. The adjustable resistance bit line structure may comprise a bit line structure in which the resistance of an intrinsic (or near intrinsic) polysilicon portion of the bit line structure may be adjusted via an application of a voltage to a select gate portion of the bit line structure that is electrically isolated from the intrinsic polysilicon portion (e.g., via an oxide layer between the intrinsic polysilicon portion and the select gate portion). The memory cells may comprise a first conductive metal oxide (e.g., titanium oxide) that abuts a second conductive metal oxide (e.g., aluminum oxide) that abuts a layer of amorphous silicon.

Abstract: A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.

Abstract: A recessed high voltage metal oxide semiconductor (MOS) transistor is provided for use in a two-terminal memory cell. The two-terminal memory cell can include a resistive switching device connected to the recessed MOS transistor. The recessed MOS transistor provides for an increased channel length relative to the transistor size in comparison to a traditional MOS transistor. This allows for a decreased memory cell size while maintaining comparable electrical parameters (threshold voltage, channel length, and leakage) than would otherwise be possible. The recessed MOS transistor can be made as either a NMOS or PMOS device using n-type or p-type materials respectively, where the channel, or inversion layer, is formed by electrons (NMOS) or holes (PMOS) between the source and drain in the transistor.

Abstract: A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a barrier material layer between the semiconductor material layer and the conductive oxide material layer, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, the bit line is disposed in a second direction perpendicular to the first direction. The barrier material layer has an ionic conductivity of greater than about 0.1 Siemens/cm @ 1000° C.

Abstract: A memory device is provided that includes a memory controller coupled to a memory cell including a barrier modulated switching structure. The memory controller is adapted to program the memory cell to a first programming state, and program the memory cell to one of a plurality of target programming states from the first programming state.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line includes a first portion and a second portion including an electrically conductive carbon-containing material. The nonvolatile memory material includes a semiconductor material layer and a conductive oxide material layer, with the semiconductor material layer disposed adjacent the second portion of the word line.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and conductive oxide material layer, forming a first barrier material layer between the word line and the nonvolatile memory material, forming a second barrier material layer between the bit line and the nonvolatile memory material, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line.

Abstract: A matrix rail structure is formed over a substrate. The matrix rail structure includes a pair of lengthwise sidewalls that extend along a first horizontal direction and comprises, or is at least partially subsequently replaced with, a set of at least one gate electrode rail extending along the first horizontal direction and straight-sidewalled gate dielectrics. A pair of vertical semiconductor channel strips and a pair of laterally-undulating gate dielectrics can be formed on sidewalls of the matrix rail structure for each vertical field effect transistor. At least one laterally-undulating gate electrode extending along the first horizontal direction is formed on the laterally-undulating gate dielectrics. Bottom active regions and top active regions are formed at end portions of the vertical semiconductor channel strips. The vertical field effect transistors can be formed as a two-dimensional array, and may be employed as access transistors for a three-dimensional memory device.