Patents by Inventor Tansen Varghese

Tansen Varghese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250120224
    Abstract: In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.
    Type: Application
    Filed: February 2, 2023
    Publication date: April 10, 2025
    Inventors: Anna Kasprzak-Zablocka, Tansen Varghese
  • Publication number: 20250040328
    Abstract: In an embodiment an optoelectronic arrangement includes at least one vertical optoelectronic device with a first side and a second side, wherein at least parts of the second side form a main emission surface, and wherein the optoelectronic device is configured to emit light of a first wavelength from the main emission surface, an electrically conductive barrier structure at least partially surrounding the at least one vertical optoelectronic device and comprising sidewalls with a reflective surface, the reflective surface electrically isolated from sidewalls of the vertical optoelectronic device, a layer stack arranged on and bonded to the main emission surface and comprising a first epitaxially grown converter layer configured to convert the light of the first wavelength to light of a second wavelength and an optional conductive layer arranged on the main emission surface and electrically connecting a second contact with the electrically conductive barrier structure.
    Type: Application
    Filed: December 2, 2022
    Publication date: January 30, 2025
    Inventor: Tansen Varghese
  • Patent number: 12199134
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: January 14, 2025
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Behringer, Andreas Biebersdorf, Ruth Boss, Erwin Lang, Tobias Meyer, Alexander Pfeuffer, Marc Philippens, Julia Stolz, Tansen Varghese, Sebastian Wittmann, Siegfried Herrmann, Berthold Hahn, Bruno Jentzsch, Korbinian Perzlmaier, Peter Stauss, Petrus Sundgren, Jens Mueller, Kerstin Neveling, Frank Singer, Christian Mueller
  • Publication number: 20240421255
    Abstract: In an embodiment a method for processing an optoelectronic component includes providing a growth substrate having a first lattice constant, epitaxially depositing a sacrificial layer based on GaN with a dopant concentration higher than 1e18 atoms/cm3 having a second lattice constant different from the first lattice constant, epitaxially depositing a top layer having a lower doping concentration than the sacrificial layer based on GaN having a third lattice constant different from the first lattice constant, wherein a growth of the sacrificial layer and the top layer generates a plurality of dislocations on a surface of the top layer, and electrochemically porosifying the sacrificial layer through the dislocations on the exposed first portions such that the sacrificial layer below the second portions is at least partially porosified and forming a functional layer stack onto the second portions based on an InGaN semiconductor material.
    Type: Application
    Filed: October 28, 2022
    Publication date: December 19, 2024
    Inventor: Tansen Varghese
  • Publication number: 20240395971
    Abstract: In an embodiment an optoelectronic component includes at least one semiconductor body including a first semiconductor region, a second semiconductor region and an active region therebetween, wherein the active region is configured to generate electromagnetic radiation, a cover element laterally surrounding the at least one semiconductor body and having at least one patterned side surface facing away from the at least one semiconductor body, wherein the cover element contains an index-matched material, and a reflection element, which at least partly covers the at least one patterned side surface, wherein the active region is at least partly laterally surrounded by the first semiconductor region.
    Type: Application
    Filed: August 10, 2022
    Publication date: November 28, 2024
    Inventors: Tansen Varghese, Adrian Stefan Avramescu, Andreas Lex
  • Publication number: 20240372054
    Abstract: In an embodiment an optoelectronic semiconductor device includes a semiconductor layer stack having a first semiconductor layer of a first conductivity type, an active zone, and a second semiconductor layer of a second conductivity type, wherein the optoelectronic semiconductor device is configured to emit generated electromagnetic radiation via a first main surface of the first semiconductor layer, and wherein a lateral width z of the active zone is smaller than a smallest lateral width c of the first and the second semiconductor layers, separating elements arranged adjacent to the semiconductor layer stack, the separating elements vertically extending along the semiconductor layer stack, and portions of a metal layer arranged on a side of the first semiconductor layer facing away from the active zone and arranged at positions of the separating elements.
    Type: Application
    Filed: August 30, 2022
    Publication date: November 7, 2024
    Inventors: Tansen Varghese, Andreas Lex, Adrian Avramescu
  • Publication number: 20240322069
    Abstract: In an embodiment a method for manufacturing an optoelectronic semiconductor device includes forming a semiconductor layer stack comprising an active zone for generating or receiving electromagnetic radiation, forming a hard mask layer over the semiconductor layer stack, patterning the hard mask layer to form a hard mask having a width d measured in a first lateral direction, patterning the semiconductor layer stack to form a mesa having a width w measured in the first lateral direction with d>w, wherein the hard mask protrudes from the mesa at a first lateral end and at a second lateral end of the mesa, and wherein the first lateral end and the second lateral end are arranged at opposing sides of the mesa along the first lateral direction, forming a cover layer over sidewalls of the mesa and etching the cover layer using the hard mask as an etching mask to form a separating groove.
    Type: Application
    Filed: June 29, 2022
    Publication date: September 26, 2024
    Inventor: Tansen Varghese
  • Patent number: 12100783
    Abstract: An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: September 24, 2024
    Assignee: OSRAM OLED GMBH
    Inventors: Tansen Varghese, Adrian Stefan Avramescu
  • Patent number: 12094916
    Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconducting recombination layer for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements on a first side of the recombination layer, at least one second contact element on the first side of the recombination layer, a plurality of semiconducting first connection regions, and at least one semiconducting second connection region. Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.
    Type: Grant
    Filed: January 23, 2020
    Date of Patent: September 17, 2024
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Martin Rudolf Behringer, Tansen Varghese, Alvaro Gomez-Iglesias
  • Patent number: 12057522
    Abstract: Disclosed is method for making a component and a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: August 6, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tansen Varghese, Petrus Sundgren
  • Patent number: 12046696
    Abstract: An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 23, 2024
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Martin Behringer, Alexander Tonkikh, Tansen Varghese
  • Patent number: 11948966
    Abstract: In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: April 2, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tansen Varghese, Bruno Jentzsch
  • Patent number: 11916167
    Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: February 27, 2024
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Tansen Varghese, Wolfgang Schmid
  • Patent number: 11538852
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: December 27, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tansen Varghese, Bruno Jentzsch, Laura Kreiner
  • Publication number: 20220320399
    Abstract: The invention relates to a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.
    Type: Application
    Filed: July 23, 2020
    Publication date: October 6, 2022
    Inventors: Tansen Varghese, Petrus Sundgren
  • Publication number: 20220130893
    Abstract: In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.
    Type: Application
    Filed: March 4, 2020
    Publication date: April 28, 2022
    Inventors: Tansen Varghese, Bruno Jentzsch
  • Patent number: 11282983
    Abstract: A semiconductor chip may have a radiation-permeable support, a semiconductor body, and a transparent current spreading layer. The semiconductor body may have an n-sided semiconductor layer, a p-sided semiconductor layer, and an optically active area therebetween. The semiconductor body may be secured to the support by means of a radiation permeable connection layer. The current spread layer may be based on zinc selenide and may be adjacent to the n-sided semi-conductor layer. A method for producing this type of semiconductor chip is also disclosed.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: March 22, 2022
    Assignee: OSRAM OLED GmbH
    Inventor: Tansen Varghese
  • Publication number: 20220029056
    Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.
    Type: Application
    Filed: December 5, 2019
    Publication date: January 27, 2022
    Inventors: Tansen Varghese, Wolfgang Schmid
  • Publication number: 20220020811
    Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconducting recombination layer (1) for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements (31) on a first side (11) of the recombination layer, at least one second contact element (32) on the first side of the recombination layer, a plurality of semiconducting first connection regions (21), and at least one semiconducting second connection region (22). Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.
    Type: Application
    Filed: January 23, 2020
    Publication date: January 20, 2022
    Inventors: Martin Rudolf Behringer, Tansen Varghese, Alvaro Gomez-Iglesias
  • Patent number: 11177414
    Abstract: An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: November 16, 2021
    Assignee: OSRAM OLED GMBH
    Inventors: Tansen Varghese, Stefan Illek