Abstract: A high electron mobility transistor (HEMT) includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, source and drain structures over the second III-V compound layer and spaced apart from each other, a gate structure over the second III-V compound layer and between the source and drain structures, a gate field plate over the second III-V compound layer and between the gate structure and the drain structure, and an etch stop layer over the drain structure and spaced apart from the gate field plate.

Abstract: A bipolar transistor includes a substrate having a first well with a first dopant type; and a split collector region in the substrate, the split collector region including a highly doped central region having the first dopant type, and a lightly doped peripheral region having a second dopant type, opposite the first dopant type, wherein the lightly doped peripheral region surrounds the highly doped central region, a dopant concentration of the lightly doped peripheral region ranges from about 5×1012 ions/cm3 to about 5×1013 ions/cm3, and the lightly doped peripheral region has a same maximum depth as the highly doped central region.

Abstract: One illustrative method disclosed herein includes forming a conformal SMCM layer above a conformal high-k gate insulation layer within each of first and second replacement gate cavities (RGC), removing the SMCM layer from the first RGC while leaving the SMCM layer in position within the second RGC, forming a first conformal metal-containing material (MCM) layer above the gate insulation layer within the first RGC and above the SMCM layer in position within the second RGC, removing the first conformal MCM layer and the conformal SMCM layer positioned within the second RGC while leaving the first conformal MCM layer within the first RGC, and forming a second conformal MCM layer above the first conformal MCM layer positioned within the first RGC and above the gate insulation layer positioned within the second RGC.

Abstract: One illustrative integrated circuit product disclosed herein includes a short-channel transistor device and a long-channel transistor device formed above a semiconductor substrate, wherein a first gate structure for the short-channel transistor device includes a short-channel WFM layer with a first upper surface that is positioned at a first distance above an upper surface of the semiconductor substrate, and wherein a second gate structure for the long-channel transistor device includes a long-channel WFM layer with a second upper surface that is positioned at a second distance above the upper surface of the semiconductor substrate, wherein the first distance is greater than the second distance.

Abstract: A light source module adapted to provide a superposition structured pattern includes a light emitting device adapted to provide a light beam, a light guiding element including a polarizing beam splitter to separate the light beam into a first light beam and a second light beam, a first diffractive element configured to convert the first light beam into a first structured light, and a second diffractive element configured to convert the second light beam into a second structured light. Polarization states of the first light beam and the second light beam are different. The first and second structured lights are projected into a projection region, and overlapped and imaged as a superposition structured pattern. The projection region has sub-projection regions arranged in a matrix and adjacent to each other, and the pattern distribution of the superposition structured pattern in each sub-projection region is different from each other.

Abstract: A method for operating a LiDAR system in an automobile that can include sending light pulses toward an object; receiving analog sensor data from an optical sensor measuring the light pulses reflected off the object; digitizing the analog sensor data using an analog to digital conversion system having a first sampling rate to generate a first set of processed sensor data and using a time to digital conversion system having a second sampling rate that is greater than the first sampling rate to generate a second set of processed sensor data; selecting the first set of processed sensor data when the analog sensor data is beneath a threshold signal to noise ratio; selecting the second set of processed sensor data when the analog sensor data exceeds the threshold signal to noise ratio; and calculating a range between the LiDAR system and the object by extracting time of flight data from the selected set of processed sensor data.

Abstract: Embodiments of the disclosure provide receivers for a light detection and ranging (LiDAR) scanner. The receiver includes a photodetector configured to receive a laser beam, and convert the received laser beam to an electrical signal including a plurality of pulses. The receiver also includes an amplifier configured to amplify the electrical signal. The receiver further includes a pulse equalizer configured to sharpen the plurality of pulses in the amplified electrical signal. Each pulse is sharpened to have a narrower width and an increased amplitude.

Abstract: A method of making a bipolar transistor includes patterning a first photoresist over a collector region of the bipolar transistor, the first photoresist defining a first opening. The method further includes performing a first implantation process through the first opening. The method further includes patterning a second photoresist over the collector region, the second photoresist defining a second opening different from the first opening. The method further includes performing a second implantation process through the second opening, wherein a dopant concentration resulting from the second implantation process is different from a dopant concentration resulting from the first implantation process.

Abstract: A semiconductor device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a source contact and a drain contact over the second III-V compound layer, a gate contact over the second III-V compound layer and between the source contact and the drain contact, a gate field plate over the second III-V compound layer, a first etch stop layer over the source contact, and a second etch stop layer over the drain contact and separated from the first etch stop layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: The method comprises forming a drain region in the first layer. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer.

Abstract: The present disclosure, in some embodiments, relates to a wafer cassette system. The wafer cassette system includes a wafer cassette includes a first plurality of wafer slots respectively having a first width. An adaptive inset is fastened to the wafer cassette in a rigid connection. The adaptive inset includes a second plurality of wafer slots respectively having a second width that is less than the first width. The second plurality of wafer slots are configured to receive a substrate after the adaptive inset has been fastened to the wafer cassette.

Abstract: The present disclosure, in some embodiments, relates to a method of transporting a semiconductor wafer. The method includes transferring a semiconductor wafer into a first wafer slot of a second plurality of wafer slots within an adaptive inset. The adaptive inset is arranged within an interior cavity of a wafer cassette having a first plurality of wafer slots while transferring the semiconductor wafer into the first wafer slot. The wafer cassette and the adaptive inset are transported into a loading port of a semiconductor processing tool configured to perform a fabrication process on the semiconductor wafer.

Abstract: The present disclosure relates to a wafer cassette system having an adaptive inset configured to enable wafers having a first diameter to be held by a wafer cassette configured to hold wafers having a second diameter larger than the first diameter. The wafer cassette system includes a wafer cassette having a first plurality of wafer slots configured to receive one or more wafers having a first diameter. An adaptive inset is arranged in an interior cavity of the wafer cassette. The adaptive inset has a second plurality of wafer slots configured to receive one or more wafers having a second diameter that is less than the first diameter. The adaptive inset allows for the wafer cassette to hold wafers having the second diameter, thereby enabling semiconductor processing tools to processes wafer having a different diameter than those able to be held by wafer cassettes that the tools can receive.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A light source module adapted to provide a superposition structured pattern includes a light emitting device adapted to provide a light beam, a light guiding element including a polarizing beam splitter to separate the light beam into a first light beam and a second light beam, a first diffractive element configured to convert the first light beam into a first structured light, and a second diffractive element configured to convert the second light beam into a second structured light. Polarization states of the first light beam and the second light beam are different. The first and second structured lights are projected into a projection region, and overlapped and imaged as a superposition structured pattern. The projection region has sub-projection regions arranged in a matrix and adjacent to each other, and the pattern distribution of the superposition structured pattern in each sub-projection region is different from each other.

Abstract: A light health care system including a physiological sensing device, a processor, and a light source device is provided. The physiological sensing device is adapted to acquire physiological data of a user. The processor is coupled to the physiological sensing device, and the processor acquires at least one light parameter corresponding to the physiological data according to the physiological data. The light source device is coupled to the processor, and the light source device outputs a light beam according to the at least one light parameter, wherein a green light beam or a blue light beam in the light beam accounts for more than 40% of the light beam. A light health care method is also provided.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.