Abstract: The present disclosure relates to a wafer cassette system having an adaptive inset configured to enable wafers having a first diameter to be held by a wafer cassette configured to hold wafers having a second diameter larger than the first diameter. The wafer cassette system includes a wafer cassette having a first plurality of wafer slots configured to receive one or more wafers having a first diameter. An adaptive inset is arranged in an interior cavity of the wafer cassette. The adaptive inset has a second plurality of wafer slots configured to receive one or more wafers having a second diameter that is less than the first diameter. The adaptive inset allows for the wafer cassette to hold wafers having the second diameter, thereby enabling semiconductor processing tools to processes wafer having a different diameter than those able to be held by wafer cassettes that the tools can receive.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A light health care system including a physiological sensing device, a processor, and a light source device is provided. The physiological sensing device is adapted to acquire physiological data of a user. The processor is coupled to the physiological sensing device, and the processor acquires at least one light parameter corresponding to the physiological data according to the physiological data. The light source device is coupled to the processor, and the light source device outputs a light beam according to the at least one light parameter, wherein a green light beam or a blue light beam in the light beam accounts for more than 40% of the light beam. A light health care method is also provided.

Abstract: A light source module adapted to provide a superposition structured pattern includes a light emitting device adapted to provide a light beam, a light guiding element including a polarizing beam splitter to separate the light beam into a first light beam and a second light beam, a first diffractive element configured to convert the first light beam into a first structured light, and a second diffractive element configured to convert the second light beam into a second structured light. Polarization states of the first light beam and the second light beam are different. The first and second structured lights are projected into a projection region, and overlapped and imaged as a superposition structured pattern. The projection region has sub-projection regions arranged in a matrix and adjacent to each other, and the pattern distribution of the superposition structured pattern in each sub-projection region is different from each other.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: A method and an apparatus for performing multi-threaded video decoding are disclosed. The method takes use of a multi-threaded scheme to process an encoded picture stream on a picture by picture basis. In the method, multiple threads are used for performing video decoding at the same time, such as one thread for the operation of parsing input bits into syntax elements of one picture implemented by the first thread, another thread for the operation of decoding the parsed syntax elements of another picture into pixel values implemented by the second thread, and the other threads for the operations of the non-reference picture, such as bidirectional predictive picture, including parsing input bits into syntax elements and the subsequent operation of decoding the parsed syntax elements into pixel values. Therefore, the decoding speed is substantially increased, and the decoding efficiency is enhanced.

Abstract: A light source apparatus including a light source is provided. The light source emits a light beam. The light beam illuminates a user so that at least one brain wave index of at least one region in frontal lobe regions of the user changes. A wearable apparatus is also provided.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: A carrier monitoring system and a method thereof are disclosed. The carrier monitoring system includes carriers for carrying and positioning at least one circuit board, and a reflow oven including a conveyor, a processing module and a database. When one of the carriers is placed on the conveyor, some sensing units are pressed by a plurality of bumps disposed on a bottom of the carrier, and each of the pressed sensing units transmits a sensing signal to the processing module. According to the sensing signals, the processing module obtains a carrier code; and, according to a plurality of identification codes stored in the database and the carrier code, the processing module can determine which carrier is placed on the conveyor. As a result, the technical effect of monitoring the carrier entering the reflow oven can be achieved.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A semiconductor device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a source contact and a drain contact over the second III-V compound layer, a gate contact over the second III-V compound layer and between the source contact and the drain contact, a gate field plate over the second III-V compound layer, a first etch stop layer over the source contact, and a second etch stop layer over the drain contact and separated from the first etch stop layer.

Abstract: An apparatus for transmission of wireless energy and an apparatus for reception of wireless energy are provided. The apparatus for transmission of wireless energy includes a natural energy conversion module, an energy converter, and an energy transmitter. The natural energy conversion module receives the natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into the wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy to an energy receiver.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: Methods for forming a group III-V device structure are provided. A method includes forming a first through via structure penetrating through group III-V compound layers over a front surface of a semiconductor substrate. The method also includes thinning the semiconductor substrate from a back surface of the semiconductor substrate. The method further includes etching the semiconductor substrate from the back surface to form a via hole substantially aligned with the first through via structure. In addition, the method includes etching the semiconductor substrate from the back surface to form a recess extending from a bottom surface of the recess towards the first through via structure. The first through via structure is exposed by the via hole and the recess. The method also includes forming a conductive layer in the via hole and the recess to form a second through via structure connected to the first through via structure.

Abstract: Methods for forming a group III-V device structure are provided. A method includes forming a first through via structure penetrating through group III-V compound layers over a front surface of a semiconductor substrate. The method also includes thinning the semiconductor substrate from a back surface of the semiconductor substrate. The method further includes etching the semiconductor substrate from the back surface to form a via hole substantially aligned with the first through via structure. In addition, the method includes etching the semiconductor substrate from the back surface to form a recess extending from a bottom surface of the recess towards the first through via structure. The first through via structure is exposed by the via hole and the recess. The method also includes forming a conductive layer in the via hole and the recess to form a second through via structure connected to the first through via structure.

Abstract: A semiconductor device includes a substrate, overlaid by a III-V compound semiconductor layer. The substrate includes a circuit region and a seal ring region, wherein the seal ring region surrounds the circuit region. A seal ring structure is disposed in the seal ring region, wherein the seal ring structure includes a first via structure, extending through part of the substrate and the III-V compound semiconductor layer, that surrounds the circuit region.

Abstract: A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.

Abstract: A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.