Abstract: A super junction includes a substrate and an epitaxial layer over the substrate, the epitaxial layer having a first dopant type. The super junction further includes an angled trench in the epitaxial layer, the angled trench having sidewalls disposed at an angle ranging from about 85-degrees to about 89-degrees with respect to a top surface of the epitaxial layer. The super junction further includes a doped body in the epitaxial layer surrounding the angled trench, the doped body having a second dopant type, the second dopant type opposite that of the first dopant type.

Abstract: A transfer-bonding method for light emitting devices including following steps is provided. A plurality of light emitting devices is formed over a first substrate and is arranged in array, wherein each of the light emitting devices includes a device layer and an interlayer sandwiched between the device layer and the first substrate. A protective layer is formed over the first substrate to selectively cover parts of the light emitting devices, and other parts of the light emitting devices are uncovered by the protective layer. The device layers uncovered by the protective layer are bonded with a second substrate. The interlayers uncovered by the protective layer are removed, so that parts of the device layers uncovered by the protective layer are separated from the first substrate and are transfer-bonded to the second substrate.

Abstract: A display panel comprising a substrate, a meshed shielding pattern, a plurality of light-emitting devices and a solar cell is provided. The substrate has a first surface and a second surface opposite to the first surface, the substrate comprises a first circuit layer disposed over the first surface and a second circuit layer disposed over the second surface. The meshed shielding pattern is disposed on first surface of the substrate to define a plurality of pixel regions over the substrate. The light-emitting devices are disposed on the first surface of the substrate and electrically connected to the first circuit layer, and at least one of the light-emitting devices is disposed in one of the pixel regions. The solar cell is disposed on the second surface of the substrate and electrically connected to the second circuit layer.

Abstract: A bipolar transistor includes a substrate and a first well in the substrate, the first well having a first dopant type. The bipolar transistor further includes a split collector region in the first well. The split collector region includes a highly doped central region having a second dopant type opposite the first dopant type; and a lightly doped peripheral region having the second dopant type, the lightly doped peripheral region surrounding the highly doped central region. A dopant concentration of the lightly doped peripheral region is less than a dopant concentration of the highly doped central region.

Abstract: A method and an apparatus for performing multi-threaded video decoding are disclosed. The method takes use of a multi-threaded scheme to process an encoded picture stream on a picture by picture basis. In the method, multiple threads are used for performing video decoding at the same time, such as one thread for the operation of parsing input bits into syntax elements of one picture implemented by the first thread, another thread for the operation of decoding the parsed syntax elements of another picture into pixel values implemented by the second thread, and the other threads for the operations of the non-reference picture, such as bidirectional predictive picture, including parsing input bits into syntax elements and the subsequent operation of decoding the parsed syntax elements into pixel values. Therefore, the decoding speed is substantially increased, and the decoding efficiency is enhanced.

Abstract: A semiconductor structure includes a semiconductor substrate, a first doped region, a second doped region and a dielectric. The first doped region and the second doped region respectively has an aspect ratio and a dopant concentration uniformity along a depth in the semiconductor substrate. The dielectric is between the first doped region and the second doped region. The dopant concentration uniformity is within 0.2% and the aspect ratio of the semiconductor substrate is greater than about 10.

Abstract: A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of trenches in the hard mask layer and extending into the substrate. Each trench has at least one side wall and a bottom wall. The method further includes forming at least one barrier insulator layer along the at least one side wall and over the bottom wall of each trench, removing the at least one barrier insulator layer over the bottom wall of each trench, and filling the plurality of trenches with a semiconductor material of a second conductivity type.

Abstract: A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighboring trenches each have trench sidewalls and a trench bottom surface. A region having a second conductivity type is disposed in or adjacent to a trench and meets the semiconductor substrate region at a p-n junction. A gate electrode is formed on the semiconductor substrate region and electrically is electrically isolated from the semiconductor substrate region by a gate dielectric. A body region having the second conductivity type is disposed on opposite sides of the gate electrode near a surface of the semiconductor substrate. A source region having the first conductivity type is disposed within in the body region on opposite sides of the gate electrode near the surface of the semiconductor substrate.

Abstract: Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

Abstract: A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of trenches in the hard mask layer and extending into the substrate. Each trench has at least one side wall and a bottom wall. The method further includes forming at least one barrier insulator layer along the at least one side wall and over the bottom wall of each trench, removing the at least one barrier insulator layer over the bottom wall of each trench, and filling the plurality of trenches with a semiconductor material of a second conductivity type.

Abstract: An image processing method for boundary resolution enhancement is disclosed. Firstly, an image is transferred into an image layer. Noise of the image layer is removed by a bilateral filter and crisp edges are retained at the same time. Moreover, the image layer is interpolated by an interpolation filter for resolution enhancement. The image processing method of the present invention can lower the image blur degree substantially, enhance the image resolution and be widely implemented in all sorts of image/video processing hardware devices.

Abstract: A charge apparatus including a natural energy conversion module, an energy converter, an energy transmitter, an energy receiver, and an electricity storage device is provided. The natural energy conversion module receives the natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into a wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy. The energy receiver receives the wireless energy and converts the wireless energy into a second electric energy to charge an external apparatus. The energy transmitter monitors the current charge status of the external apparatus so as to adjust transmitting the wireless energy. The electricity storage device is electrically connected to the natural energy conversion module to store the first electric energy.

Abstract: The present disclosure relates to a method and apparatus to increase breakdown voltage of a semiconductor power device. A bonded wafer is formed by bonding a device wafer to a handle wafer with an intermediate oxide layer. The device wafer is thinned substantially from its original thickness. A power device is formed within the device wafer through a semiconductor fabrication process. The handle wafer is patterned to remove section of the handle wafer below the power device, resulting in a breakdown voltage improvement for the power device as well as a uniform electrostatic potential under reverse biasing conditions of the power device, wherein the breakdown voltage is determined. Other methods and structures are also disclosed.

Abstract: The present disclosure relates to a method and apparatus to increase breakdown voltage of a semiconductor power device. A bonded wafer is formed by bonding a device wafer to a handle wafer with an intermediate oxide layer. The device wafer is thinned substantially from its original thickness. A power device is formed within the device wafer through a semiconductor fabrication process. The handle wafer is patterned to remove section of the handle wafer below the power device, resulting in a breakdown voltage improvement for the power device as well as a uniform electrostatic potential under reverse biasing conditions of the power device, wherein the breakdown voltage is determined. Other methods and structures are also disclosed.

Abstract: A charge apparatus including a natural energy conversion module, an energy converter, an energy transmitter, and an energy receiver is provided. The natural energy conversion module receives a natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into a wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy in a wireless manner. The energy receiver receives the wireless energy in a wireless manner and converts the wireless energy into a second electric energy.

Abstract: A method for forming a pixel of an LED light source is provided. The method includes: forming a first layer on a first substrate; forming a second layer and a first light-emitting active layer on the first layer; forming a first intermediate layer on the second layer; forming a third layer on a second substrate; forming a fourth layer and a second light-emitting active layer on the third layer; placing the third layer, the fourth layer, and the second light-emitting active layer on the first intermediate layer, wherein the first light-emitting active layer and the second light-emitting active layer emit different colors of light. A method for forming a plurality of light-emitting diode pixels arranged in a two-dimensional array is also provided.

Abstract: Disclosed is a system and method for capturing technical documents and reading and commentating captured documents thereof. The system may comprise a capturing system and a reading with commentating system. The capturing system selects related drawings from a group of technical documents. It then provides important information and the related drawings onto an image for the readers' review. The reading with commentating system allows the readers to process technical classification, management and export/import for the group of technical documents. Readers may make comments on an information sharing platform after reviewing the technical documents. Besides, other materials collected or generated from the technical analysis on the technical documents may be attached to the information sharing platform.

Abstract: A method for controlling an alternating current (AC) output of a photovoltaic (PV) device, and an AC PV device are introduced herein. The method includes: receiving solar radiant energy by using a PV cell array and then converting the solar radiant energy into a direct current (DC) energy output; and selecting an arrangement and combination sequence of the PV cells by using a control module, to vary a voltage according to a timing (frequency), so that a sine-like wave output is obtained at an output terminal.

Abstract: An illumination device including a base and a heat dissipation member is provided. The heat dissipation member disposed on the base has a central axis and at least one heat dissipation channel. At least one virtual circle having a radius R1 with reference to the central axis is formed on an orthogonal virtual plane of the central axis, and at least one intersection is generated by the virtual circle and border of the heat dissipation channel.

Abstract: A photography and projection apparatus including a light emitting and sensing module and a projection lens is provided. The light emitting and sensing module has a light emitting and sensing area, and includes a light emitting unit array and a light sensing unit array. The light emitting unit array includes a plurality of light emitting units arranged in an array. The light emitting units are distributed in the light emitting and sensing area. The light emitting unit array is adapted to provide an image beam. The light sensing unit array includes a plurality of light sensing units arranged in an array. The light sensing units are distributed in the light emitting and sensing area. The projection lens is disposed on a transmission path of the image beam. A light emitting and sensing module is also provided.